Do you want to publish a course? Click here

Origin of nonlocal resistance in multiterminal graphene on hexagonal-boron-nitride: Fermi surface edge currents rather than Fermi sea topological valley currents

81   0   0.0 ( 0 )
 Added by Branislav Nikolic
 Publication date 2017
  fields Physics
and research's language is English




Ask ChatGPT about the research

The recent observation [R. V. Gorbachev et al., Science {bf 346}, 448 (2014)] of nonlocal resistance $R_mathrm{NL}$ near the Dirac point (DP) of multiterminal graphene on aligned hexagonal boron nitride (G/hBN) has been interpreted as the consequence of topological valley Hall currents carried by the Fermi sea states just beneath the bulk gap $E_g$ induced by the inversion symmetry breaking. However, the valley Hall conductivity $sigma^v_{xy}$, quantized inside $E_g$, is not directly measurable. Conversely, the Landauer-B{u}ttiker formula, as numerically exact approach to observable nonlocal transport quantities, yields $R_mathrm{NL} equiv 0$ for the same simplistic Hamiltonian of gapped graphene that generates $sigma^v_{xy} eq 0$. We combine ab initio with quantum transport calculations to demonstrate that G/hBN wires with zigzag edges host dispersive edge states near the DP that are absent in theories based on the simplistic Hamiltonian. Although such edge states exist also in isolated zigzag graphene wires, aligned hBN is required to modify their energy-momentum dispersion and generate $R_mathrm{NL} eq 0$ near the DP persisting in the presence of edge disorder. Concurrently, the edge states resolve the long-standing puzzle of why the highly insulating state of G/hBN is rarely observed. We conclude that the observed $R_mathrm{NL}$ is unrelated to Fermi sea topological valley currents conjectured for gapped Dirac spectra.



rate research

Read More

In this letter, we examine the role of Coulomb interactions in the emergence of macroscopically ordered states in graphene supported on hexagonal boron nitride substrates. Due to incommensuration effects with the substrate, graphene can develop gapped low energy modes that spatially conform into a triangular superlattice of quantum rings. In the presence of these modes, we show that Coulomb interactions lead to spontaneous formation of chiral loop currents in bulk and to macroscopic spin-valley order at zero temperature. We show that this exotic state breaks time reversal symmetry and can be detected with interferometry and polar Kerr measurements.
Graphene on hexagonal boron nitride (hBN) can exhibit a topological phase via mutual crystallographic alignment. Recent measurements of nonlocal resistance ($R_{nl}$) near the secondary Dirac point (SDP) in ballistic graphene/hBN superlattices have been interpreted as arising due to the quantum valley Hall state. We report hBN/graphene/hBN superlattices in which $R_{nl}$ at SDP is negligible, but below 60 K approaches the value of $h/2e^{2}$ in zero magnetic field at the primary Dirac point with a characteristic decay length of 2 ${mu}$m. Furthermore, nonlocal transport transmission probabilities based on the Landauer-Buttiker formalism show evidence for spin-degenerate ballistic valley-helical edge modes, which are key for the development of valleytronics
293 - S. Engels , A. Epping , C. Volk 2013
We report on the fabrication and characterization of etched graphene quantum dots (QDs) on hexagonal boron nitride (hBN) and SiO2 with different island diameters. We perform a statistical analysis of Coulomb peak spacings over a wide energy range. For graphene QDs on hBN, the standard deviation of the normalized peak spacing distribution decreases with increasing QD diameter, whereas for QDs on SiO2 no diameter dependency is observed. In addition, QDs on hBN are more stable under the influence of perpendicular magnetic fields up to 9T. Both results indicate a substantially reduced substrate induced disorder potential in graphene QDs on hBN.
When a crystal is subjected to a periodic potential, under certain circumstances (such as when the period of the potential is close to the crystal periodicity; the potential is strong enough, etc.) it might adjust itself to follow the periodicity of the potential, resulting in a, so called, commensurate state. Such commensurate-incommensurate transitions are ubiquitous phenomena in many areas of condensed matter physics: from magnetism and dislocations in crystals, to vortices in superconductors, and atomic layers adsorbed on a crystalline surface. Of particular interest might be the properties of topological defects between the two commensurate phases: solitons, domain walls, and dislocation walls. Here we report a commensurate-incommensurate transition for graphene on top of hexagonal boron nitride (hBN). Depending on the rotational angle between the two hexagonal lattices, graphene can either stretch to adjust to a slightly different hBN periodicity (the commensurate state found for small rotational angles) or exhibit little adjustment (the incommensurate state). In the commensurate state, areas with matching lattice constants are separated by domain walls that accumulate the resulting strain. Such soliton-like objects present significant fundamental interest, and their presence might explain recent observations when the electronic, optical, Raman and other properties of graphene-hBN heterostructures have been notably altered.
Topological materials may exhibit Hall-like currents flowing transversely to the applied electric field even in the absence of a magnetic field. In graphene superlattices, which have broken inversion symmetry, topological currents originating from graphenes two valleys are predicted to flow in opposite directions and combine to produce long-range charge neutral flow. We observe this effect as a nonlocal voltage at zero magnetic field in a narrow energy range near Dirac points at distances as large as several microns away from the nominal current path. Locally, topological currents are comparable in strength to the applied current, indicating large valley-Hall angles. The long-range character of topological currents and their transistor-like control by gate voltage can be exploited for information processing based on the valley degrees of freedom.
comments
Fetching comments Fetching comments
Sign in to be able to follow your search criteria
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا