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Register a new userOptospintronics in graphene via proximity coupling
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The observation of micron size spin relaxation makes graphene a promising material for applications in spintronics requiring long distance spin communication. However, spin dependent scatterings at the contact/graphene interfaces affect the spin injection efficiencies and hence prevent the material from achieving its full potential. While this major issue could be eliminated by nondestructive direct optical spin injection schemes, graphenes intrinsically low spin orbit coupling strength and optical absorption place an obstacle in their realization. We overcome this challenge by creating sharp artificial interfaces between graphene and WSe2 monolayers. Application of a circularly polarized light activates the spin polarized charge carriers in the WSe2 layer due to its spin coupled valley selective absorption. These carriers diffuse into the superjacent graphene layer, transport over a 3.5 um distance, and are finally detected electrically using BN/Co contacts in a non local geometry. Polarization dependent measurements confirm the spin origin of the non local signal.
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Van der Waals heterostructures composed of multiple few layer crystals allow the engineering of novel materials with predefined properties. As an example, coupling graphene weakly to materials with large spin orbit coupling (SOC) allows to engineer a sizeable SOC in graphene via proximity effects. The strength of the proximity effect depends on the overlap of the atomic orbitals, therefore, changing the interlayer distance via hydrostatic pressure can be utilized to enhance the interlayer coupling between the layers. In this work, we report measurements on a graphene/WSe$_2$ heterostructure exposed to increasing hydrostatic pressure. A clear transition from weak localization to weak anti-localization is visible as the pressure increases, demonstrating the increase of induced SOC in graphene.
Unlike the electrical conductance that can be widely modulated within the same material even in deep nanoscale devices, tuning the thermal conductance within a single material system or nanostructure is extremely challenging and requires a large-scale device. This prohibits the realization of robust ON/OFF states in switching the flow of thermal currents. Here, we present the theory of a thermal switch based on resonant coupling of three photonic resonators, in analogy to the field-effect electronic transistor composed of a source, gate, and drain. As a material platform, we capitalize on the extreme tunability and low-loss resonances observed in the dielectric function of monolayer hexagonal boron nitride (hBN) under controlled strain. We derive the dielectric function of hBN from first principles, including the phonon-polariton linewidths computed by considering phonon isotope and anharmonic phonon-phonon scattering. Subsequently, we propose a strain-controlled hBN-based thermal switch that modulates thermal conductance by more than an order of magnitude, corresponding to an ON/OFF contrast ratio of 98%, in a deep subwavelength nanostructure.
We propose a way of making graphene superconductive by putting on it small superconductive islands which cover a tiny fraction of graphene area. We show that the critical temperature, T_c, can reach several Kelvins at the experimentally accessible range of parameters. At low temperatures, T<<T_c, and zero magnetic field, the density of states is characterized by a small gap E_g<T_c resulting from the collective proximity effect. Transverse magnetic field H_g(T) E_g is expected to destroy the spectral gap driving graphene layer to a kind of a superconductive glass state. Melting of the glass state into a metal occurs at a higher field H_{g2}(T).
One of the most fundamental forms of magnon-phonon interaction is an intrinsic property of magnetic materials, the magnetoelastic coupling. This particular form of interaction has been the basis for describing magnetic materials and their strain related applications, where strain induces changes of internal magnetic fields. Different from the magnetoelastic coupling, more than 40 years ago, it was proposed that surface acoustic waves may induce surface magnons via rotational motion of the lattice in anisotropic magnets. However, a signature of this magnon-phonon coupling mechanism, termed magneto-rotation coupling, has been elusive. Here, we report the first observation and theoretical framework of the magneto-rotation coupling in a perpendicularly anisotropic ultra-thin film Ta/CoFeB(1.6 nm)/MgO, which consequently induces nonreciprocal acoustic wave attenuation with a unprecedented ratio up to 100$%$ rectification at the theoretically predicted optimized condition. Our work not only experimentally demonstrates a fundamentally new path for investigating magnon-phonon coupling, but also justify the feasibility of the magneto-rotation coupling based application.
In van der Waals bonded or rotationally disordered multilayer stacks of two-dimensional (2D) materials, the electronic states remain tightly confined within individual 2D layers. As a result, electron-phonon interactions occur primarily within layers and interlayer electrical conductivities are low. In addition, strong covalent in-plane intralayer bonding combined with weak van der Waals interlayer bonding results in weak phonon-mediated thermal coupling between the layers. We demonstrate here, however, that Coulomb interactions between electrons in different layers of multilayer epitaxial graphene provide an important mechanism for interlayer thermal transport even though all electronic states are strongly confined within individual 2D layers. This effect is manifested in the relaxation dynamics of hot carriers in ultrafast time-resolved terahertz spectroscopy. We develop a theory of interlayer Coulomb coupling containing no free parameters that accounts for the experimentally observed trends in hot-carrier dynamics as temperature and the number of layers is varied.
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