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Register a new userHybrid graphene tunneling photoconductor with interface engineering towards fast photoresponse and high responsivity
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Hybrid graphene photoconductor/phototransistor has achieved giant photoresponsivity, but its response speed dramatically degrades as the expense due to the long lifetime of trapped interfacial carriers. In this work, by intercalating a large-area atomically thin MoS2 film into a hybrid graphene photoconductor, we have developed a prototype tunneling photoconductor, which exhibits a record-fast response (rising time ~17 ns) and a high responsivity (~$3times10^4$ A/W at 635 nm and 16.8 nW illumination) across the broad spectral range. We demonstrate that the photo-excited carriers generated in silicon are transferred into graphene through a tunneling process rather than carrier drift. The atomically thin MoS2 film not only serves as tunneling layer but also passivates surface states, which in combination delivers a superior response speed (~3 order of magnitude improved than a device without MoS2 layer), while the responsivity remains high. This intriguing tunneling photoconductor integrates both fast response and high responsivity and thus has significant potential in practical applications of optoelectronic devices.
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Defects are detrimental for optoelectronics devices, such as stacking faults can form carrier-transportation barriers, and foreign impurities (Au) with deep-energy levels can form carrier traps and non-radiative recombination centers. Here, we first developed self-catalyzed p-type GaAs nanowires (NWs) with pure zinc blende (ZB) structure, and then fabricated photodetector made by these NWs. Due to absence of stacking faults and suppression of large amount of defects with deep energy levels, the photodetector exhibits room-temperature high photo responsivity of 1.45 x 105 A W^-1 and excellent specific detectivity (D*) up to 1.48 x 10^14 Jones for low-intensity light signal of wavelength 632.8 nm, which outperforms previously reported NW-based photodetectors. These results demonstrate that these self-catalyzed pure-ZB GaAs NWs to be promising candidates for optoelectronics applications.
Defect induced trap states are essential in determining the performance of semiconductor photodetectors. The de-trap time of carriers from a deep trap could be prolonged by several orders of magnitude as compared to shallow trap, resulting in additional decay/response time of the device. Here, we demonstrate that the trap states in two-dimensional ReS2 could be efficiently modulated by defect engineering through molecule decoration. The deep traps that greatly prolong the response time could be mostly filled by Protoporphyrin (H2PP) molecules. At the same time, carrier recombination and shallow traps would in-turn play dominant roles in determining the decay time of the device, which can be several orders of magnitude faster than the as-prepared device. Moreover, the specific detectivity of the device is enhanced (as high as ~1.89 x 10^13 Jones) due to the significant reduction of dark current through charge transfer between ReS2 and molecules. Defect engineering of trap states therefore provides a solution to achieve photodetectors with both high responsivity and fast response.
By merging bottom-up and top-down strategies we tailor graphenes electronic properties within nanometer accuracy, which opens up the possibility to design optical and plasmonic circuitries at will. In a first step, graphene electronic properties are macroscopically modified exploiting the periodic potential generated by the self assembly of metal cluster superlattices on a graphene/Ir(111) surface. We then demonstrate that individual metal clusters can be selectively removed by a STM tip with perfect reproducibility and that the structures so created are stable even at room temperature. This enables one to nanopattern circuits down to the 2.5 nm only limited by the periodicity of the Moire-pattern, i.e., by the distance between neighbouring clusters, and different electronic and optical properties should prevail in the covered and uncovered regions. The method can be carried out on micro-meter-sized regions with clusters of different materials permitting to tune the strength of the periodic potential.
We demonstrate tunable Schottky barrier height and record photo-responsivity in a new-concept device made of a single-layer CVD graphene transferred onto a matrix of nanotips patterned on n-type Si wafer. The original layout, where nano-sized graphene/Si heterojunctions alternate to graphene areas exposed to the electric field of the Si substrate, which acts both as diode cathode and transistor gate, results in a two-terminal barristor with single-bias control of the Schottky barrier. The nanotip patterning favors light absorption, and the enhancement of the electric field at the tip apex improves photo-charge separation and enables internal gain by impact ionization. These features render the device a photodetector with responsivity (3 A/W for white LED light at 3 mW/cm2 intensity) almost an order of magnitude higher than commercial photodiodes. We extensively characterize the voltage and the temperature dependence of the device parameters and prove that the multi-junction approach does not add extra-inhomogeneity to the Schottky barrier height distribution. This work represents a significant advance in the realization of graphene/Si Schottky devices for optoelectronic applications.
Metal-intercalated graphene on Ir(111) exhibits phonon signatures in inelastic elec- tron tunneling spectroscopy with strengths that depend on the intercalant. Extraor- dinarily strong graphene phonon signals are observed for Cs intercalation. Li interca- lation likewise induces clearly discriminable phonon signatures, albeit less pronounced than observed for Cs. The signal can be finely tuned by the alkali metal coverage and gradually disappears upon increasing the junction conductance from tunneling to con- tact ranges. In contrast to Cs and Li, for Ni-intercalated graphene the phonon signals stay below the detection limit in all transport ranges. Going beyond the conventional two-terminal approach, transport calculations provide a comprehensive understanding of the subtle interplay between the graphene{electrode coupling and the observation of graphene phonon spectroscopic signatures.
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