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Register a new userLocal electronic properties of the graphene-protected giant Rashba-split BiAg$_2$ surface
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We report the preparation of the interface between graphene and the strong Rashba-split BiAg$_2$ surface alloy and investigatigation of its structure as well as the electronic properties by means of scanning tunneling microscopy/spectroscopy and density functional theory calculations. Upon evaluation of the quasiparticle interference patterns the unpertrubated linear dispersion for the $pi$ band of $n$-doped graphene is observed. Our results also reveal the intact nature of the giant Rashba-split surface states of the BiAg$_2$ alloy, which demonstrate only a moderate downward energy shift upon the presence of graphene. This effect is explained in the framework of density functional theory by an inward relaxation of the Bi atoms at the interface and subsequent delocalisation of the wave function of the surface states. Our findings demonstrate a realistic pathway to prepare a graphene protected giant Rashba-split BiAg$_2$ for possible spintronic applications.
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Within density functional theory, we study bulk band structure and surface states of BiTeBr. We consider both ordered and disordered phases which differ in atomic order in the Te-Br sublattice. On the basis of relativistic ab-initio calculations, we show that the ordered BiTeBr is energetically preferable as compared with the disordered one. We demonstrate that both Te- and Br-terminated surfaces of the ordered BiTeBr hold surface states with a giant spin-orbit splitting. The Te-terminated surface-state spin splitting has the Rashba-type behavior with the coupling parameter alpha_R ~ 2 eVAA.
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We discover a pair of spin-polarized surface bands on the (111) face of grey arsenic by using angle-resolved photoemission spectroscopy (ARPES). In the occupied side, the pair resembles typical nearly-free-electron Shockley states observed on noble-metal surfaces. However, pump-probe ARPES reveals that the spin-polarized pair traverses the bulk band gap and that the crossing of the pair at $barGamma$ is topologically unavoidable. First-principles calculations well reproduce the bands and their non-trivial topology; the calculations also support that the surface states are of Shockley type because they arise from a band inversion caused by crystal field. The results provide compelling evidence that topological Shockley states are realized on As(111).
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We present a detailed analysis of the band structure of the BiAg$_2$/Ag/Si(111) trilayer system by means of high resolution Angle Resolved Photoemission Spectroscopy (ARPES). BiAg2/Ag/Si(111) exhibits a complex spin polarized electronic structure due to giant spin-orbit interactions. We show that a complete set of constant energy ARPES maps, supplemented by a modified nearly free electron calculation, provides a unique insight into the structure of the spin polarized bands and spin gaps. We also show that the complex gap structure can be continuously tuned in energy by a controlled deposition of an alkali metal.
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