Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userNarrow-band anisotropic electronic structure of ReS$_2$
482
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
We have used angle resolved photoemission spectroscopy to investigate the band structure of ReS$_2$, a transition-metal dichalcogenide semiconductor with a distorted 1T crystal structure. We find a large number of narrow valence bands, which we attribute to the combined influence of the structural distortion and spin-orbit coupling. We further image how this leads to a strong in-plane anisotropy of the electronic structure, with quasi-one-dimensional bands reflecting predominant hopping along zig-zag Re chains. We find that this does not persist up to the top of the valence band, where a more three-dimensional character is recovered with the fundamental band gap located away from the Brillouin zone centre along $k_z$. These experiments are in good agreement with our density-functional theory calculations, shedding new light on the bulk electronic structure of ReS$_2$, and how it can be expected to evolve when thinned to a single layer.
rate research
Read More
Light-matter coupling in van der Waals materials holds significant promise in realizing Bosonic condensation and superfluidity. The underlying semiconductors crystal asymmetry, if any, can be utilized to form anisotropic half-light half-matter quasiparticles. We demonstrate generation of such highly anisotropic exciton-polaritons at the interface of a biaxial layered semiconductor, stacked on top of a distributed Bragg reflector. The spatially confined photonic mode in this geometry couples with polarized excitons and their Rydberg states, creating a system of highly anisotropic polariton manifolds, displaying vacuum Rabi splitting of upto 68 meV. Rotation of the incident beam polarization is used to tune coupling strength and smoothly switch regimes from weak to strong coupling, while also enabling transition from one three-body coupled oscillator system to another. Light-matter coupling is further tunable by varying the number of weakly coupled optically active layers. Our work provides a versatile method of engineering devices for applications in polarization-controlled polaritonics and optoelectronics.
The electronic band structure of complex nanostructured semiconductors has a considerable effect on the final electronic and optical properties of the material and, ultimately, on the functionality of the devices incorporating them. Valence electron energy-loss spectroscopy (VEELS) in the transmission electron microscope (TEM) provides the possibility of measuring this property of semiconductors with high spatial resolution. However, it still represents a challenge for narrow-bandgap semiconductors, since an electron beam with low energy spread is required. Here we demonstrate that by means of monochromated VEELS we can study the electronic band structure of narrow-gap materials GaSb and InAs in the form of heterostructured nanowires, with bandgap values down to 0.5 eV, especially important for newly developed structures with unknown bandgaps. Using complex heterostructured InAs-GaSb nanowires, we determine a bandgap value of 0.54 eV for wurtzite InAs. Moreover, we directly compare the bandgaps of wurtzite and zinc-blende polytypes of GaSb in a single nanostructure, measured here as 0.84 and 0.75 eV, respectively. This allows us to solve an existing controversy in the band alignment between these structures arising from theoretical predictions. The findings demonstrate the potential of monochromated VEELS to provide a better understanding of the band alignment at the heterointerfaces of narrow-bandgap complex nanostructured materials with high spatial resolution. This is especially important for semiconductor device applications where even the slightest variations of the electronic band structure at the nanoscale can play a crucial role in their functionality.
The bulk band structure of Bi$_2$Te$_3$ has been determined by angle-resolved photoemission spectroscopy and compared to first-principles calculations. We have performed calculations using the local density approximation (LDA) of density functional theory and the one-shot $GW$ approximation within the all-electron full-potential linearized augmented-plane-wave (FLAPW) formalism, fully taking into account spin-orbit coupling. Quasiparticle effects produce significant changes in the band structure of bite~when compared to LDA. Experimental and calculated results are compared in the spectral regions where distinct differences between the LDA and $GW$ results are present. Overall a superior agreement with $GW$ is found, highlighting the importance of many-body effects in the band structure of this family of topological insulators.
Iron antimonide (FeSb$_2$) is a mysterious material with peculiar colossal thermopower of about $-45$ mV/K at 10 K. However, a unified microscopic description of this phenomenon is far from being achieved. The understanding of the electronic structure in details is crucial in identifying the microscopic mechanism of FeSb$_2$ thermopower. Combining angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations we find that the spectrum of FeSb$_2$ consists of two bands near the Fermi energy: the nondispersive strongly renormalized $alpha$-band, and the hole-like $beta$-band that intersects the first one at $Gamma$ and Y points of the Brillouin zone. Our study reveals the presence of sizable correlations, predominantly among electrons derived from Fe-3d states, and considerable anisotropy in the electronic structure of FeSb$_2$. These key ingredients are of fundamental importance in the description of colossal thermopower in FeSb$_2$.
IV-VI semiconductor SnSe has been known as the material with record high thermoelectric performance.The multiple close-to-degenerate valence bands in the electronic band structure has been one of the key factors contributing to the high power factor and thus figure of merit in the SnSe single crystal. To date, there have been primarily theoretical calculations of this particular electronic band structure. In this paper, however, using angle-resolved photoemission spectroscopy, we perform a systematic investigation of the electronic structure of SnSe. We directly observe three predicted hole bands with small energy differences between their band tops and relatively small in-plane effective masses, in good agreement with the ab initio calculations and critical for the enhancement of the Seebeck coefficient while keeping high electrical conductivity. Our results reveal the complete band structure of SnSe and help to provide a deeper understanding of the electronic origin of the excellent thermoelectric performances in SnSe.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
