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Register a new userResponse to Comment on Spin-Orbit Logic with Magnetoelectric Nodes: A Scalable Charge Mediated Nonvolatile Spintronic Logic (arXiv:1607.06690)
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Sasikanth Manipatruni
Publication date
2017
fields
Physics
and research's language is
English
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In this technical note, we address the comments on the energy estimates for Magnetoelectric Spin-orbit (MESO) Logic, a new logic device proposed by the authors. We provide an analytical derivation of the switching energy, and support it with time-domain circuit simulations using a self-consistent ferroelectric (FE) compact model. While the energy to charge a capacitor is dissipated in the interconnect and transistor resistance, we note that the energy to switch a capacitor and a FE is independent of the interconnect resistance value to the first order. Also device design can mitigate the parasitic energy losses. We further show the circuit simulations for a sub 10 aJ switching operation of a MESO logic device comprehending: a) Energy stored in multiferroic; b) Energy dissipation in the resistance of the interconnect, Ric ; c) Energy dissipation in the inverse spin-orbit coupling (ISOC) spin to charge converter Risoc; d) Supply, ground resistance, and transistor losses. We also identify the requirements for the resistivity of the spin-orbit coupling materials and address the effect of internal resistance of the spin to charge conversion layer. We provide the material parameter space where MESO (with a fan-out of 1 and interconnect) achieves sub 10 aJ switching energy with path for scaling via ferroelectric/magnetoelectric/spin-orbit materials development.
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The comment by O. Entin-Wohlman, A. Aharony, and Y. Utsumi, on our paper S. Varela, I. Zambrano, B. Berche, V. Mujica, and E. Medina, Phys. Rev. B 101, 241410(R) (2020) makes a few points related to the validity of our model, especially in the light of the interpretation of Bardarsons theorem: in the presence of time reversal symmetry and for half-integral spin the transmission eigenvalues of the two terminal scattering matrix come in (Kramers) degenerate pairs. The authors of the comment first propose an ansatz for the wave function in the spin active region and go on to show that the resulting transmission does not show spin dependence, reasoning that spin dependence would violate Bardarsons assertion. Here we clearly show that the ansatz presented assumes spin-momentum independence from the outset and thus just addresses the spinless particle problem. We then find the appropriate eigenfunction contemplating spin-momentum coupling and show that the resulting spectrum obeys Bardarsons theorem. Finally we show that the allowed wavevectors are the ones assumed in the original paper and thus the original conclusions follow. We recognize that the Hamiltonian in our paper written in local coordinates on a helix was deceptively simple and offer the expressions of how it should be written to more overtly convey the physics involved. The relation between spin polarization and torque becomes clear, as described in our paper. This response is a very important clarification in relation to the implications of Bardarsons theorem concerning the possibility of spin polarization in one dimensional systems in the linear regime.
In the quest to develop spintronic logic, it was discovered that magnetoelectric switching results in lower energy and shorter switching time than other mechanisms. Magnetoelectric (ME) field due to exchange bias at the interface with a multi-ferroic (such as BiFeO3) is well suited for 180 degree switching of magnetization. The ME field is determined by the direction of canted magnetization in BiFeO3 which can point at an angle to the plane, to which voltage is applied. Dependence of switching time and the threshold of ME field on its angles was determined by micromagnetic simulations. Switching occurs by formation of a domain wall on the side of the nanomagnet on top of BFO and its propagation to the rest of the magnet. For in-plane magnetization, switching occurs over a wide range of angles and at all magnitudes of ME field above threshold. For out-of-plane magnetization failure occurs (with an exception of a narrow range of angles and magnitudes of ME field) due to the domain wall reflecting from the opposite end of the nanomagnet.
Recent advances in manipulating single electron spins in quantum dots have brought us close to the realization of classical logic gates based on representing binary bits in spin polarizations of single electrons. Here, we show that a linear array of three quantum dots, each containing a single spin polarized electron, and with nearest neighbor exchange coupling, acts as the universal NAND gate. The energy dissipated during switching this gate is the Landauer-Shannon limit of kTln(1/p) [T = ambient temperature and p = intrinsic gate error probability]. With present day technology, p = 1E-9 is achievable above 1 K temperature. Even with this small intrinsic error probability, the energy dissipated during switching the NAND gate is only ~ 21 kT, while todays nanoscale transistors dissipate about 40,000 - 50,000 kT when they switch.
We offer a brief response to the criticisms put forward by Cusin et al in arXiv:1811.03582 about our work arXiv:1810.13435 and arXiv:1806.01718, emphasising that none of these criticisms are relevant to our main results.
An electric current controlled spin-wave logic gate based on a width-modulated dynamic magnonic crystal is realized. The device utilizes a spin-wave waveguide fabricated from a single-crystal Yttrium Iron Garnet film and two conducting wires attached to the film surface. Application of electric currents to the wires provides a means for dynamic control of the effective geometry of the waveguide and results in a suppression of the magnonic band gap. The performance of the magnonic crystal as an AND logic gate is demonstrated.
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