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Register a new userSpin relaxation 1/f noise in graphene
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We report the first measurement of 1/f type noise associated with electronic spin transport, using single layer graphene as a prototypical material with a large and tunable Hooge parameter. We identify the presence of two contributions to the measured spin-dependent noise: contact polarization noise from the ferromagnetic electrodes, which can be filtered out using the cross-correlation method, and the noise originated from the spin relaxation processes. The noise magnitude for spin and charge transport differs by three orders of magnitude, implying different scattering mechanisms for the 1/f fluctuations in the charge and spin transport processes. A modulation of the spin-dependent noise magnitude by changing the spin relaxation length and time indicates that the spin-flip processes dominate the spin-dependent noise.
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Short ballistic graphene Josephson junctions sustain superconducting current with a non-sinusoidal current-phase relation up to a critical current threshold. The current-phase relation, arising from proximitized superconductivity, is gate-voltage tunable and exhibits peculiar skewness observed in high quality graphene superconductors heterostructures with clean interfaces. These properties make graphene Josephson junctions promising sensitive quantum probes of microscopic fluctuations underlying transport in two-dimensions. We show that the power spectrum of the critical current fluctuations has a characteristic $1/f$ dependence on frequency, $f$, probing two points and higher correlations of carrier density fluctuations of the graphene channel induced by carrier traps in the nearby substrate. Tunability with the Fermi level, close to and far from the charge neutrality point, and temperature dependence of the noise amplitude are clear fingerprints of the underlying material-inherent processes. Our results suggest a roadmap for the analysis of decoherence sources in the implementation of coherent devices by hybrid nanostructures.
Spin relaxation in graphene is investigated in electrical graphene spin valve devices in the non-local geometry. Ferromagnetic electrodes with in-plane magnetizations inject spins parallel to the graphene layer. They are subject to Hanle spin precession under a magnetic field $B$ applied perpendicular to the graphene layer. Fields above 1.5 T force the magnetization direction of the ferromagnetic contacts to align to the field, allowing injection of spins perpendicular to the graphene plane. A comparison of the spin signals at B = 0 and B = 2 T shows a 20 % decrease in spin relaxation time for spins perpendicular to the graphene layer compared to spins parallel to the layer. We analyze the results in terms of the different strengths of the spin orbit effective fields in the in-plane and out-of-plane directions.
In graphene, out-of-plane (flexural) vibrations and static ripples imposed by the substrate relax the electron spin, intrinsically protected by mirror symmetry. We calculate the relaxation times in different scenarios, accounting for all the possible spin-phonon couplings allowed by the hexagonal symmetry of the lattice. Scattering by flexural phonons imposes the ultimate bound to the spin lifetimes, in the ballpark of hundreds of nano-seconds at room temperature. This estimate and the behavior as a function of the carrier concentration are substantially altered by the presence of tensions or the pinning with the substrate. Static ripples also influence the spin transport in the diffusive regime, dominated by motional narrowing. We find that the Dyakonov-Perel mechanism saturates when the mean free path is comparable to the correlation length of the heights profile. In this regime, the spin-relaxation times are exclusively determined by the geometry of the corrugations. Simple models for typical corrugations lead to lifetimes of the order of tens of micro-seconds.
Low frequency noise close to the carrier remains little explored in spin torque nano oscillators. However, it is crucial to investigate as it limits the oscillators frequency stability. This work addresses the low offset frequency flicker noise of a TMR-based spin-torque vortex oscillator in the regime of large amplitude steady oscillations. We first phenomenologically expand the nonlinear auto-oscillator theory aiming to reveal the properties of this noise. We then present a thorough experimental study of the oscillators $1/f$ flicker noise and discuss the results based on the theoretical predictions. Hereby, we connect the oscillators nonlinear dynamics with the concept of flicker noise and furthermore refer to the influence of a standard $1/f$ noise description based on the Hooge formula, taking into account the non-constant magnetic oscillation volume, which contributes to the magnetoresistance.
We compare different methods to measure the anisotropy of the spin-lifetime in graphene. In addition to out-of-plane rotation of the ferromagnetic electrodes and oblique spin precession, we present a Hanle experiment where the electron spins precess around either a magnetic field perpendicular to the graphene plane or around an in-plane field. In the latter case, electrons are subject to both in-plane and out-of-plane spin relaxation. To fit the data, we use a numerical simulation that can calculate precession with anisotropies in the spin-lifetimes under magnetic fields in any direction. Our data show a small, but distinct anisotropy that can be explained by the combined action of isotropic mechanisms, such as relaxation by the contacts and resonant scattering by magnetic impurities, and an anisotropic Rashba spin-orbit based mechanism. We also assess potential sources of error in all three types of experiment and conclude that the in-plane/out-of-plane Hanle method is most reliable.
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