No Arabic abstract
Low frequency noise close to the carrier remains little explored in spin torque nano oscillators. However, it is crucial to investigate as it limits the oscillators frequency stability. This work addresses the low offset frequency flicker noise of a TMR-based spin-torque vortex oscillator in the regime of large amplitude steady oscillations. We first phenomenologically expand the nonlinear auto-oscillator theory aiming to reveal the properties of this noise. We then present a thorough experimental study of the oscillators $1/f$ flicker noise and discuss the results based on the theoretical predictions. Hereby, we connect the oscillators nonlinear dynamics with the concept of flicker noise and furthermore refer to the influence of a standard $1/f$ noise description based on the Hooge formula, taking into account the non-constant magnetic oscillation volume, which contributes to the magnetoresistance.
We study the agility of current-tunable oscillators based on a magnetic vortex orbiting around a point contact in spin-valves. Theory predicts frequency-tuning by currents occurs at constant orbital radius, so an exceptional agility is anticipated. To test this, we have inserted an oscillator in a microwave interferometer to apply abrupt current variations while time resolving its emission. Using frequency shift keying, we show that the oscillator can switch between two stabilized frequencies differing by 25% in less than ten periods. With a wide frequency tunability and a good agility, such oscillators possess desirable figures of merit for modulation-based rf applications.
We report on the results of the low-frequency (1/f, where f is frequency) noise measurements in MoS2 field-effect transistors revealing the relative contributions of the MoS2 channel and Ti/Au contacts to the overall noise level. The investigation of the 1/f noise was performed for both as fabricated and aged transistors. It was established that the McWhorter model of the carrier number fluctuations describes well the 1/f noise in MoS2 transistors, in contrast to what is observed in graphene devices. The trap densities extracted from the 1/f noise data for MoS2 transistors, are 1.5 x 10^19 eV-1cm-3 and 2 x 10^20 eV-1cm-3 for the as fabricated and aged devices, respectively. It was found that the increase in the noise level of the aged MoS2 transistors is due to the channel rather than the contact degradation. The obtained results are important for the proposed electronic applications of MoS2 and other van der Waals materials.
The correlation of phase fluctuations in any type of oscillator fundamentally defines its spectral shape. However, in nonlinear oscillators, such as spin torque nano oscillators, the frequency spectrum can become particularly complex. This is specifically true when not only considering thermal but also colored $1/f$ flicker noise processes, which are crucial in the context of the oscillators long term stability. In this study, we address the frequency spectrum of spin torque oscillators in the regime of large-amplitude steady oscillations experimentally and as well theoretically. We particularly take both thermal and flicker noise into account. We perform a series of measurements of the phase noise and the spectrum on spin torque vortex oscillators, notably varying the measurement time duration. Furthermore, we develop the modelling of thermal and flicker noise in Thiele equation based simulations. We also derive the complete phase variance in the framework of the nonlinear auto-oscillator theory and deduce the actual frequency spectrum. We investigate its dependence on the measurement time duration and compare with the experimental results. Long term stability is important in several of the recent applicative developments of spin torque oscillators. This study brings some insights on how to better address this issue.
Vortex based spin torque nano oscillators (STVOs) can present more complex dynamics than the spin torque induced gyrotropic (G) motion of the vortex core. The respective dynamic modes and the transition between them can be controlled by experimental parameters such as the applied dc current. An interesting behavior is the stochastic transition from the G- to a dynamic C-state occurring for large current densities. Moreover, the C-state oscillations exhibit a constant active magnetic volume. We present noise measurements in the different dynamic states that allow accessing specific properties of the stochastic transition, such as the characteristic state transition frequency. Furthermore,we confirm, as theoretically predicted, an increase of flicker noise with $I_{dc}^2$ when the oscillation volume remains constant with the current. These results bring insight into the potential optimization of noise properties sought for many potential rf applications with spin torque oscillators. Furthermore, the investigated stochastic characteristics open up new potentialities, for instance in the emerging field of neuromorphic computing schemes.
This paper describes a numerical experiment, based on full micromagnetic simulations of current-driven magnetization dynamics in nanoscale spin valves, to identify the origins of spectral linewidth broadening in spin torque oscillators. Our numerical results show two qualitatively different regimes of magnetization dynamics at zero temperature: regular (single-mode precessional dynamics) and chaotic. In the regular regime, the dependence of the oscillator integrated power on frequency is linear, and consequently the dynamics is well described by the analytical theory of current-driven magnetization dynamics for moderate amplitudes of oscillations. We observe that for higher oscillator amplitudes, the functional dependence of the oscillator integrated power as a function of frequency is not a single-valued function and can be described numerically via introduction of nonlinear oscillator power. For a range of currents in the regular regime, the oscillator spectral linewidth is a linear function of temperature. In the chaotic regime found at large current values, the linewidth is not described by the analytical theory. In this regime we observe the oscillator linewidth broadening, which originates from sudden jumps of frequency of the oscillator arising from random domain wall nucleation and propagation through the sample. This intermittent behavior is revealed through a wavelet analysis that gives superior description of the frequency jumps compared to several other techniques.