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Register a new userSingle-Atom Scale Structural Selectivity in Te Nanowires Encapsulated inside Ultra-Narrow, Single-Walled Carbon Nanotubes
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Extreme nanowires (ENs) represent the ultimate class of crystals: They are the smallest possible periodic materials. With atom-wide motifs repeated in one dimension (1D), they offer a privileged perspective into the Physics and Chemistry of low-dimensional systems. Single-walled carbon nanotubes (SWCNTs) provide ideal environments for the creation of such materials. Here we present a comprehensive study of Te ENs encapsulated inside ultra- narrow SWCNTs with diameters between 0.7 nm and 1.1 nm. We combine state-of-the-art imaging techniques and 1D-adapted ab initio structure prediction to treat both confinement and periodicity effects. The studied Te ENs adopt a variety of structures, exhibiting a true 1D realisation of a Peierls structural distortion and transition from metallic to insulating behaviour as a function of encapsulating diameter. We analyse the mechanical stability of the encapsulated ENs and show that nanoconfinement is not only a useful means to produce ENs, but may actually be necessary, in some cases, to prevent them from disintegrating. The ability to control functional properties of these ENs with confinement has numerous applications in future device technologies, and we anticipate that our study will set the basic paradigm to be adopted in the characterisation and understanding of such systems.
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We investigate experimentally the transport properties of single-walled carbon nanotube bundles as a function of temperature and applied current over broad intervals of these variables. The analysis is performed on arrays of nanotube bundles whose axes are aligned along the direction of the externally supplied bias current. The data are found consistent with a charge transport model governed by the tunnelling between metallic regions occurring through potential barriers generated by nanotubes contact areas or bundles surfaces. Based on this model and on experimental data we describe quantitatively the dependencies of the amplitude of these barriers upon bias current and temperature.
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