No Arabic abstract
Our understanding of topological insulators is based on an underlying crystalline lattice where the local electronic degrees of freedom at different sites hybridize with each other in ways that produce nontrivial band topology, and the search for material systems to realize such phases have been strongly influenced by this. Here we theoretically demonstrate topological insulators in systems with a random distribution of sites in space, i. e., a random lattice. This is achieved by constructing hopping models on random lattices whose ground states possess nontrivial topological nature (characterized e. g., by Bott indices) that manifests as quantized conductances in systems with a boundary. By tuning parameters such as the density of sites (for a given range of fermion hopping), we can achieve transitions from trivial to topological phases. We discuss interesting features of these transitions. In two spatial dimensions, we show this for all five symmetry classes (A, AII, D, DIII and C) that are known to host nontrivial topology in crystalline systems. We expect similar physics to be realizable in any dimension and provide an explicit example of a $Z_2$ topological insulator on a random lattice in three spatial dimensions. Our study not only provides a deeper understanding of the topological phases of non-interacting fermions, but also suggests new directions in the pursuit of the laboratory realization of topological quantum matter.
We investigate the effects of magnetic and nonmagnetic impurities on the two-dimensional surface states of three-dimensional topological insulators (TIs). Modeling weak and strong TIs using a generic four-band Hamiltonian, which allows for a breaking of inversion and time-reversal symmetries and takes into account random local potentials as well as the Zeeman and orbital effects of external magnetic fields, we compute the local density of states, the single-particle spectral function, and the conductance for a (contacted) slab geometry by numerically exact techniques based on kernel polynomial expansion and Greens function approaches. We show that bulk disorder refills the suface-state Dirac gap induced by a homogeneous magnetic field with states, whereas orbital (Peierls-phase) disorder perserves the gap feature. The former effect is more pronounced in weak TIs than in strong TIs. At moderate randomness, disorder-induced conducting channels appear in the surface layer, promoting diffusive metallicity. Random Zeeman fields rapidly destroy any conducting surface states. Imprinting quantum dots on a TIs surface, we demonstrate that carrier transport can be easily tuned by varying the gate voltage, even to the point where quasi-bound dot states may appear.
The anomalous Floquet Anderson insulator (AFAI) is a two dimensional periodically driven system in which static disorder stabilizes two topologically distinct phases in the thermodynamic limit. The presence of a unit-conducting chiral edge mode and the essential role of disorder induced localization are reminiscent of the integer quantum Hall (IQH) effect. At the same time, chirality in the AFAI is introduced via an orchestrated driving protocol, there is no magnetic field, no energy conservation, and no (Landau level) band structure. In this paper we show that in spite of these differences the AFAI topological phase transition is in the IQH universality class. We do so by mapping the system onto an effective theory describing phase coherent transport in the system at large length scales. Unlike with other disordered systems, the form of this theory is almost fully determined by symmetry and topological consistency criteria, and can even be guessed without calculation. (However, we back this expectation by a first principle derivation.) Its equivalence to the Pruisken theory of the IQH demonstrates the above equivalence. At the same time it makes predictions on the emergent quantization of transport coefficients, and the delocalization of bulk states at quantum criticality which we test against numerical simulations.
We study disorder effects in a two-dimensional system with chiral symmetry and find that disorder can induce a quadrupole topological insulating phase (a higher-order topological phase with quadrupole moments) from a topologically trivial phase. Their topological properties manifest in a topological invariant defined based on effective boundary Hamiltonians, the quadrupole moment, and zero-energy corner modes. We find gapped and gapless topological phases and a Griffiths regime. In the gapless topological phase, all the states are localized, while in the Griffiths regime, the states at zero energy become multifractal. We further apply the self-consistent Born approximation to show that the induced topological phase arises from disorder renormalized masses. We finally introduce a practical experimental scheme with topoelectrical circuits where the predicted topological phenomena can be observed by impedance measurements. Our work opens the door to studying higher-order topological Anderson insulators and their localization properties.
We investigate the fate of topological states on fractal lattices. Focusing on a spinless chiral p-wave paired superconductor, we find that this model supports two qualitatively distinct phases when defined on a Sierpinski gasket. While the trivial phase is characterized by a self-similar spectrum with infinitely many gaps and extended eigenstates, the novel topological phase has a gapless spectrum and hosts chiral states propagating along edges of the graph. Besides employing theoretical probes such as the real-space Chern number, inverse participation ratio, and energy-level statistics in the presence of disorder, we develop a simple physical picture capturing the essential features of the model on the gasket. Extending this picture to other fractal lattices and topological states, we show that the p+ip state admits a gapped topological phase on the Sierpinski carpet and that a higher-order topological insulator placed on this lattice hosts gapless modes localized on corners.
Recent studies of disorder or non-Hermiticity induced topological insulators inject new ingredients for engineering topological matter. Here we consider the effect of purely non-Hermitian disorders, a combination of these two ingredients, in a 1D chiral symmetric lattice with disordered gain and loss. The increasing disorder strength can drive a transition from trivial to topological insulators, characterizing by the change of topological winding number defined by localized states in the gapless and complex bulk spectra. The non-Hermitian critical behaviors are characterized by the biorthogonal localization length of zero energy edge modes, which diverges at the critical transition point and establishes the bulk-edge correspondence. Furthermore, we show that the bulk topology may be experimentally accessed by measuring the biorthogonal chiral displacement $mathcal{C}$, which converges to the winding number through time-averaging and can be extracted from proper Ramsey-interference sequences. We propose a scheme to implement and probe such non-Hermitian disorder driven topological insulators using photons in coupled micro-cavities.