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Register a new userFast recovery of the stripe magnetic order by Mn/Fe substitution in F-doped LaFeAsO superconductors
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$^{75}$As Nuclear Magnetic (NMR) and Quadrupolar (NQR) Resonance were used, together with M{o}ssbauer spectroscopy, to investigate the magnetic state induced by Mn for Fe substitutions in F-doped LaFe$_{1-x}$Mn$_{x}$AsO superconductors. The results show that $0.5$% of Mn doping is enough to suppress the superconducting transition temperature $T_c$ from 27 K to zero and to recover the magnetic structure observed in the parent undoped LaFeAsO. Also the tetragonal to orthorhombic transition of the parent compound is recovered by introducing Mn, as evidenced by a sharp drop of the NQR frequency. The NQR spectra also show that a charge localization process is at play in the system. Theoretical calculations using a realistic five-band model show that correlation-enhanced RKKY exchange interactions between nearby Mn ions stabilize the observed magnetic order, dominated by $Q_1=(pi,0)$ and $Q_2=(0,pi)$ ordering vectors. These results give compelling evidence that F-doped LaFeAsO is a strongly correlated electron system at the verge of an electronic instability.
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Inelastic neutron scattering measurements on Ba(Fe0.925Mn0.075)2As2 manifest spin fluctuations at two different wavevectors in the Fe square lattice, (1/2,0) and (1/2,1/2), corresponding to the expected stripe spin-density wave order and checkerboard antiferromagnetic order, respectively. Below T_N=80 K, long-range stripe magnetic ordering occurs and sharp spin wave excitations appear at (1/2,0) while broad and diffusive spin fluctuations remain at (1/2,1/2) at all temperatures. Low concentrations of Mn dopants nucleate local moment spin fluctuations at (1/2,1/2) that compete with itinerant spin fluctuations at (1/2,0) and may disrupt the development of superconductivity.
We present $^{75}$As Nuclear Magnetic and Quadrupole Resonance results (NMR, NQR) on a new set of LaFeAsO$_{1-x}$F$_x$ polycrystalline samples. Improved synthesis conditions led to more homogenized samples with better control of the fluorine content. The structural$equiv$nematic, magnetic, and superconducting transition temperatures have been determined by NMR spin-lattice relaxation rate and AC susceptibility measurements. The so-determined phase diagram deviates from the published one especially for low F-doping concentrations. However, if the doping level is determined from the NQR spectra, both phase diagrams can be reconciled. The absence of bulk coexistence of magnetism and superconductivity and a nanoscale separation into low-doping-like and high-doping-like regions have been confirmed. Additional frequency dependent intensity, spin-spin, and spin-lattice relaxation rate measurements on underdoped samples at the boundary of magnetism and superconductivity indicate that orthorhombicity and magnetism originate from the low-doping-like regions, and superconductivity develops at first in the high-doping-like regions.
The (Li$_{1-x}$Fe$_{x}$OH)FeSe superconductor has been suspected to exhibit long-range magnetic ordering due to Fe substitution in the LiOH layer. However, no direct observation such as magnetic reflection from neutron diffraction has be reported. Here, we use a chemical design strategy to manipulate the doping level of transition metals in the LiOH layer to tune the magnetic properties of the (Li$_{1-x-y}$Fe$_{x}$Mn$_{y}$OD)FeSe system. We find Mn doping exclusively replaces Li in the hydroxide layer resulting in enhanced magnetization in the (Li$_{0.876}$Fe$_{0.062}$Mn$_{0.062}$OD)FeSe superconductor without significantly altering the superconducting behavior as resolved by magnetic susceptibility and electrical/thermal transport measurements. As a result, long-range magnetic ordering was observed below 12 K with neutron diffraction measurements. This work has implications for the design of magnetic superconductors for the fundamental understanding of superconductivity and magnetism in the iron chalcogenide system as well as exploitation as functional materials for next generation devices.
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