Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userOptical polarizability of erbium-oxygen complexes in sol-gel-based silica films
410
0
0.0
(
0
)
Authors
Sufian Abedrabbo
Ask ChatGPT about the research
No Arabic abstract
For erbium-doped amorphous oxides, such as those that are used in compact lightwave devices interfaced with silicon, values of the refractive indices are commonly obtained empirically. This work, combining experimental and theoretical studies, examines silica as the exemplary host and the influence of erbium doping on the refractive index. Analysis of data is presented for the spectral refractive index in the ultraviolet to near infrared wavelength range of heavily erbium-doped silica thin films prepared by spin coating a sol-gel precursor on silicon and subsequent vacuum annealing. Effective medium Lorentz-Lorenz data analysis determines that the dopant component has a refractive index of 1.76(0.24) with wavelength dispersion constrained to within 2 percent. Considering the dopant as a localized ErO6 impurity complex, a corresponding theoretical refractive index of 1.662 is derived by calculating the optical polarizability and volume of the impurity. Data presented for room-temperature (293 K) photoluminescence in the vicinity of 1.54 micron are shown to be consistent with random variability in impurity sites. Inherent advantages of studying colloid-based materials are discussed. To the best of the authors knowledge, such a detailed study of the refractive index associated with erbium impurities in silica is being reported for the first time in the literature.
rate research
Read More
In this work, we show that the application of a sol-gel coating renders a microbubble whispering gallery resonator into an active device. During the fabrication of the resonator, a thin layer of erbium-doped sol-gel is applied to a tapered microcapillary, then a microbubble with a wall thickness of 1.3 $mu$m is formed with the rare earth diffused into its walls. The doped microbubble is pumped at 980 nm and lasing in the emission band of the Er$^{3+}$ ions with a wavelength of 1535 nm is observed. The laser wavelength can be tuned by aerostatic pressure tuning of the whispering gallery modes of the microbubble. Up to 240 pm tuning is observed with 2 bar of applied pressure. It is shown that the doped microbubble could be used as a compact, tunable laser source. The lasing microbubble can also be used to improve sensing capabilities in optofluidic sensing applications.
Laser cooling of a solid is achieved when a coherent laser illuminates the material in the red tail of its absorption spectrum, and the heat is carried out by anti-Stokes fluorescence of the blue-shifted photons. Solid-state laser cooling has been successfully demonstrated in several materials, including rare-earth-doped crystals and glasses. Silica glass, being the most widely used optical material, has so far evaded all laser cooling attempts. In addition to its fundamental importance, many potential applications can be conceived for anti-Stokes fluorescence cooling of silica. These potential applications range from the substrate cooling of optical circuits for quantum information processing and cryogenic cooling of mirrors in high-sensitivity interferometers for gravitational wave detection to the heating reduction in high-power fiber lasers and amplifiers. Here we report the net cooling of high-purity Yb-doped silica glass samples that are primarily developed for high-power fiber laser applications, where special care has been taken in the fabrication process to reduce their impurities and lower their parasitic background loss. The non-radiative decay rate of the excited state in Yb ions is very small in these glasses due to the low level of impurities, resulting in near-unity quantum efficiency. We report the measurement of the cooling efficiency as a function of the laser wavelength, from which the quantum efficiency of the silica glass is calculated.
Silicon-based light sources including light-emitting diodes (LEDs) and laser diodes (LDs) for information transmission are urgently needed for developing monolithic integrated silicon photonics. Silicon doped by ion implantation with erbium ions (Er$^{3+}$) is considered a promising approach, but suffers from an extremely low quantum efficiency. Here we report an electrically pumped superlinear emission at 1.54 $mu$m from Er/O-doped silicon planar LEDs, which are produced by applying a new deep cooling process. Stimulated emission at room temperature is realized with a low threshold current of ~6 mA (~0.8 A/cm2). Time-resolved photoluminescence and photocurrent results disclose the complex carrier transfer dynamics from the silicon to Er3+ by relaxing electrons from the indirect conduction band of the silicon. This picture differs from the frequently-assumed energy transfer by electron-hole pair recombination of the silicon host. Moreover, the amplified emission from the LEDs is likely due to a quasi-continuous Er/O-related donor band created by the deep cooling technique. This work paves a way for fabricating superluminescent diodes or efficient LDs at communication wavelengths based on rare-earth doped silicon.
High-entropy perovskite thin films, as the prototypical representative of the high-entropy oxides with novel electrical and magnetic features, have recently attracted great attention. Here, we reported the electronic structure and charge transport properties of sol-gel-derived high-entropy Ba(Zr0.2Sn0.2Ti0.2Hf0.2Nb0.2)O3 thin films annealed at various temperatures. By means of X-ray photoelectron spectroscopy and absorption spectrum, it is found that the conduction-band-minimum shifts downward and the valence-band-maximum shifts upward with the increase of annealing temperature, leading to the narrowed band gap. Electrical resistance measurements confirmed a semiconductor-like behavior for all the thin films. Two charge transport mechanisms, i.e., the thermally-activated transport mechanism at high temperatures and the activation-less transport mechanism at low temperatures, are identified by a self-consistent analysis method. These findings provide a critical insight into the electronic band structure and charge transport behavior of Ba(Zr0.2Sn0.2Ti0.2Hf0.2Nb0.2)O3, validating it as a compelling high-entropy oxide material for future electronic/energy-related technologies.
The evolution of viscoelastic properties near the sol-gel transition is studied by performing oscillatory rheological measurements on two different types of systems: a colloidal dispersion and a thermo-responsive polymer solution under isothermal and non-isothermal conditions. While undergoing sol-gel transition, both the systems pass through a critical point. An approach to the critical point is characterized in terms of divergence of zero shear viscosity and the subsequent appearance of the low frequency modulus. In the vicinity of the critical gel state, both the viscosity and the modulus show a power-law dependence on relative distance from the critical point. Interestingly, the longest relaxation time has been observed to diverge symmetrically on both the sides of the critical point and also shows a power-law dependence on relative distance from the critical point. The critical (power-law) exponents of the zero-shear viscosity and modulus are observed to be related to the exponents of the longest relaxation time by the hyper scaling laws. The dynamic critical exponent has also been calculated from the growth of the dynamic moduli. Remarkably, the critical relaxation exponent and dynamic critical exponent predicted from the scaling laws precisely agree with the experimental values from the isothermal as well as non-isothermal experiments. The associated critical exponents show remarkable internal consistency and universality for different kinds of systems undergoing the sol-gel transition.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
