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Register a new userImproved superconducting qubit coherence with high-temperature substrate annealing
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We assess independently the impact of high-temperature substrate annealing and metal deposition conditions on the coherence of transmon qubits in the standard 2D circuit-QED architecture. We restrict our study to devices made with aluminum interdigital capacitors on sapphire substrates. We record more than an order-of-magnitude improvement in the relaxation time of devices made with an annealed substrate, independent of whether a conventional evaporator or molecular beam epitaxy chamber was used to deposit the aluminum. We also infer similar levels of flux noise and photon shot noise through dephasing measurements on these devices. Our results indicate that substrate annealing plays a primary role in fabricating low-loss qubits, consistent with the hypothesis that substrate-air and substrate-metal interfaces are essential factors limiting the qubit lifetimes in superconducting circuits.
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We demonstrate enhanced relaxation and dephasing times of transmon qubits, up to ~ 60 mu s by fabricating the interdigitated shunting capacitors using titanium nitride (TiN). Compared to lift-off aluminum deposited simultaneously with the Josephson junction, this represents as much as a six-fold improvement and provides evidence that previous planar transmon coherence times are limited by surface losses from two-level system (TLS) defects residing at or near interfaces. Concurrently, we observe an anomalous temperature dependent frequency shift of TiN resonators which is inconsistent with the predicted TLS model.
Spins of negatively charged nitrogen-vacancy (NV$^-$) defects in diamond are among the most promising candidates for solid-state qubits. The fabrication of quantum devices containing these spin-carrying defects requires position-controlled introduction of NV$^-$ defects having excellent properties such as spectral stability, long spin coherence time, and stable negative charge state. Nitrogen ion implantation and annealing enable the positioning of NV$^-$ spin qubits with high precision, but to date, the coherence times of qubits produced this way are short, presumably because of the presence of residual radiation damage. In the present work, we demonstrate that a high temperature annealing at 1000$^circ$C allows 2 millisecond coherence times to be achieved at room temperature. These results were obtained for implantation-produced NV$^-$ defects in a high-purity, 99.99% $^{12}$C enriched single crystal chemical vapor deposited diamond. We discuss these remarkably long coherence times in the context of the thermal behavior of residual defect spins. [Published in Physical Review B {bf{88}}, 075206 (2013)]
We measure the coherence of a new superconducting qubit, the {em low-impedance flux qubit}, finding $T_2^* sim T_1 sim 1.5mu$s. It is a three-junction flux qubit, but the ratio of junction critical currents is chosen to make the qubits potential have a single well form. The low impedance of its large shunting capacitance protects it from decoherence. This qubit has a moderate anharmonicity, whose sign is reversed compared with all other popular qubit designs. The qubit is capacitively coupled to a high-Q resonator in a $lambda/2$ configuration, which permits the qubits state to be read out dispersively.
We have developed superconducting qubits based on NbN/AlN/NbN epitaxial Josephson junctions on Si substrates which promise to overcome the drawbacks of qubits based on Al/AlO$_{x}$/Al junctions. The all-nitride qubits have great advantages such as chemical stability against oxidation (resulting in fewer two-level fluctuators), feasibility for epitaxial tunnel barriers (further reducing energy relaxation and dephasing), and a larger superconducting gap of $sim$5.2 meV for NbN compared to $sim$0.3 meV for Al (suppressing the excitation of quasiparticles). Replacing conventional MgO by a Si substrate with a TiN buffer layer for epitaxial growth of nitride junctions, we demonstrate a qubit energy relaxation time $T$$_{1}$=16.3 $mu$s and a spin-echo dephasing time $T$$_{2}$=21.5 $mu$s. These significant improvements in quantum coherence are explained by the reduced dielectric loss compared to previously reported NbN-based qubits with MgO substrates ($T$$_{1}$$approx$$T$$_{2}$$approx$0.5 $mu$s). These results are an important step towards constructing a new platform for superconducting quantum hardware.
Superconductivity can be induced in a normal material via the leakage of superconducting pairs of charge carriers from an adjacent superconductor. This so-called proximity effect is markedly influenced by graphene unique electronic structure, both in fundamental and technologically relevant ways. These include an unconventional form of the leakage mechanism the Andreev reflection and the potential of supercurrent modulation through electrical gating. Despite the interest of high-temperature superconductors in that context, realizations have been exclusively based on low-temperature ones. Here we demonstrate gate-tunable, high-temperature superconducting proximity effect in graphene. Notably, gating effects result from the perfect transmission of superconducting pairs across an energy barrier -a form of Klein tunneling, up to now observed only for non-superconducting carriers- and quantum interferences controlled by graphene doping. Interestingly, we find that this type of interferences become dominant without the need of ultra-clean graphene, in stark contrast to the case of low-temperature superconductors. These results pave the way to a new class of tunable, high-temperature Josephson devices based on large-scale graphene.
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