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Register a new userSpatially resolved studies of the phases and morphology of methylammonium and formamidinium lead tri-halide perovskites
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Paulina Plochocka Dr
Publication date
2016
fields
Physics
and research's language is
English
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The family of organic-inorganic tri-halide perovskites including MA (MethylAmmonium)PbI$_{3}$, MAPbI$_{3-x}$Cl$_{x}$, FA (FormAmidinium)PbI$_{3}$ and FAPbBr$_{3}$ are having a tremendous impact on the field of photovoltaic cells due to their ease of deposition and efficiencies, but device performance can be significanly affected by inhomogeneities. Here we report a study of temperature dependent micro-photoluminescence which shows a strong spatial inhomogeneity related to the presence of microcrystalline grains, which can be both light and dark. In all of the tri-iodide based materials there is evidence that the tetragonal to orthorhombic phase transition observed around 160K does not occur uniformly across the sample with domain formation related to the underlying microcrystallite grains, some of which remain in the high temperature, tetragonal, phase even at very low temperatures. At low temperature the tetragonal domains can be significantly influenced by local defects in the layers. In FAPbBr$_{3}$ a more macroscopic domain structure is observed with large numbers of grains forming phase correlated regions.
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We investigate photoluminescence (PL) transitions of MAPbX$_{3}$ (X = I, Br and Cl) organic-inorganic hybrid perovskite single crystals under magnetic fields of up to 60 T. In these materials, sharp free-exciton transition peaks emerge at a low temperature (4.2 K). Under strong magnetic fields, the free-exciton PL transitions of three different halogens show dramatic differences. The free-exciton transitions of the MAPbCl$_{3}$ crystal undergo negative energy shifts, while those of the MAPbBr$_{3}$ crystal show normal diamagnetic shifts. To obtain the variation from Cl to Br, we attempt to measure PL transitions of MAPbCl$_{x}$Br$_{3-x}$. For MAPbI$_{3}$, the transition-energy shifts for both $sigma^{+}$ and $sigma^{-}$ transitions at 4.2 K exhibit a power-law dependence on the magnetic field. Such inconsistent magnetic-field effects on different halogens make it difficult to understand the transition-energy behavior through a unified model. We propose a possible mechanism for the field effects that is based on a combination of the Rashba effect induced by strong spin-orbit coupling and the polaron effect caused by the polar nature of the inorganic elements.
Behaving like atomically-precise two-dimensional quantum wells with non-negligible dielectric contrast, the layered HOIPs have strong electronic interactions leading to tightly bound excitons with binding energies on the order of 500 meV. These strong interactions suggest the possibility of larger excitonic complexes like trions and biexcitons, which are hard to study numerically due to the complexity of the layered HOIPs. Here, we propose and parameterize a model Hamiltonian for excitonic complexes in layered HOIPs and we study the correlated eigenfunctions of trions and biexcitons using a combination of diffusion Monte Carlo and very large variational calculations with explicitly correlated Gaussian basis functions. Binding energies and spatial structures of these complexes are presented as a function of the layer thickness. The trion and biexciton of the thinnest layered HOIP have binding energies of 35 meV and 44 meV, respectively, whereas a single exfoliated layer is predicted to have trions and biexcitons with equal binding enegies of 48 meV. We compare our findings to available experimental data and to that of other quasi-two-dimensional materials.
Excitation localization involving dynamic nanoscale distortions is a central aspect of photocatalysis, quantum materials and molecular optoelectronics. Experimental characterization of such distortions requires techniques sensitive to the formation of point-defect-like local structural rearrangements in real time. Here, we visualize excitation-induced strain fields in a prototypical member of the lead halide perovskites via femtosecond resolution diffuse x-ray scattering measurements. This enables momentum-resolved phonon spectroscopy of the locally-distorted structure and reveals radially-expanding nanometer-scale elastic strain fields associated with the formation and relaxation of polarons in photoexcited perovskites. Quantitative estimates of the magnitude and the shape of this polaronic distortion are obtained, providing direct insights into the debated dynamic structural distortions in these materials. Optical pump-probe reflection spectroscopy corroborates these results and shows how these large polaronic distortions transiently modify the carrier effective mass, providing a unified picture of the coupled structural and electronic dynamics that underlie the unique optoelectronic functionality of the hybrid perovskites.
Much recent attention has been devoted towards unravelling the microscopic optoelectronic properties of hybrid organic-inorganic perovskites (HOP). Here we investigate by coherent inelastic neutron scattering spectroscopy and Brillouin light scattering, low frequency acoustic phonons in four different hybrid perovskite single crystals: MAPbBr$_3$, FAPbBr$_3$, MAPbI$_3$ and $alpha$-FAPbI$_3$ (MA: methylammonium, FA: formamidinium). We report a complete set of elastic constants caracterized by a very soft shear modulus C$_{44}$. Further, a tendency towards an incipient ferroelastic transition is observed in FAPbBr$_3$. We observe a systematic lower sound group velocity in the technologically important iodide-based compounds compared to the bromide-based ones. The findings suggest that low thermal conductivity and hot phonon bottleneck phenomena are expected to be enhanced by low elastic stiffness, particularly in the case of the ultrasoft $alpha$-FAPbI$_3$.
Methylammonium lead iodide perovskites are considered direct bandgap semiconductors. Here we show that in fact they present a weakly indirect bandgap 60 meV below the direct bandgap transition. This is a consequence of spin-orbit coupling resulting in Rashba-splitting of the conduction band. The indirect nature of the bandgap explains the apparent contradiction of strong absorption and long charge carrier lifetime. Under hydrostatic pressure from ambient to 325 MPa, Rashba splitting is reduced due to a pressure induced ordering of the crystal structure. The nature of the bandgap becomes increasingly more direct, resulting in five times faster charge carrier recombination, and a doubling of the radiative efficiency. At hydrostatic pressures above 325 MPa, MAPI undergoes a reversible phase transition resulting in a purely direct bandgap semiconductor. The pressure-induced changes suggest epitaxial and synthetic routes to higher efficiency optoelectronic devices.
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