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Register a new userThe magnetic and transport properties of edge passivated silicene nanoribbon by Mn atoms
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The effect of chemical doping on the ZSiNRs with Mn as passivating element replacing H atoms at one edge are investigated by first principles calculations.The structures optimized in the typical ferromagnetic and antiferromagnetic coupling show that the system leads to an AFM state and achieve half metallic properties.Also,our first principle approach based on the Keldysh nonequilibrium Greens function method gives the spin dependent transport properties of the device. When the system changes from parallel to antiparallel configuration. the spin up current increases rapidly while the spin down current is still depressed. Further, it is found that the system is a quite good spin filtering device with nearly 80 percent spin filtering efficiency at a wide bias voltage region and therefore suitable for applications. The mechanisms for these phenomena are proposed in detail.
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We report results of investigations of structural and transport properties of GaAs/Ga(1-x)In(x)As/GaAs quantum wells (QWs) having a 0.5-1.8 ML thick Mn layer, separated from the QW by a 3 nm thick spacer. The structure has hole mobility of about 2000 cm2/(V*s) being by several orders of magnitude higher than in known ferromagnetic two-dimensional structures. The analysis of the electro-physical properties of these systems is based on detailed study of their structure by means of high-resolution X-ray diffractometry and glancing-incidence reflection, which allow us to restore the depth profiles of structural characteristics of the QWs and thin Mn containing layers. These investigations show absence of Mn atoms inside the QWs. The quality of the structures was also characterized by photoluminescence spectra from the QWs. Transport properties reveal features inherent to ferromagnetic systems: a specific maximum in the temperature dependence of the resistance and the anomalous Hall effect (AHE) observed in samples with both metallic and activated types of conductivity up to ~100 K. AHE is most pronounced in the temperature range where the resistance maximum is observed, and decreases with decreasing temperature. The results are discussed in terms of interaction of 2D-holes and magnetic Mn ions in presence of large-scale potential fluctuations related to random distribution of Mn atoms. The AHE values are compared with calculations taking into account its intrinsic mechanism in ferromagnetic systems.
Magnetotransport properties of p-InMnAs layers are studied in pulsed magnetic fields up to 30 T. Samples were prepared by the laser deposition and annealed by ruby laser pulses. Well annealed samples show p-type conductivity while they were n-type before the annealing. Surprisingly the anomalous Hall effect resistance in paramagnetic state (T>40 K) and in strong magnetic fields (B > 20 T) appears to be greater than that in ferromagnetic state (T <= 40 K), while the longitudinal resistance rises with the temperature decrease. The negative magnetoresistance saturates in magnetic fields higher then 10T at T near 4 K only, whereas the saturation fields of the anomalous Hall effect resistance are much less (around 2 T at 30K). The total reduction of resistance exceeds 10 times in magnetic fields around of 10T. The obtained results are interpreted on the base of the assumptions of the non-uniform distribution of Mn atoms acting as acceptors, the local ferromagnetic transition and the percolation-like character of the film conductivity, which prevailed under conditions of the strong fluctuations of the exchange interaction. Characteristic scales of the magneto-electric nonuniformity are estimated using analysis of the mesoscopic fluctuations of the non-diagonal components of the magnetoresistivity tensor.
We investigate the interplay between the edge and bulk states, induced by the Rashba spin-orbit coupling, in a zigzag silicene nanoribbon in the presence of an external electric field. The interplay can be divided into two kinds, one is the interplay between the edge and bulk states with opposite velocities, and the other is that with the same velocity direction. The former can open small direct spin-dependent subgaps. A spin-polarized current can be generated in the nanoribbon as the Fermi energy is in the subgaps. While the later can give rise to the spin precession in the nanoribbon. Therefore, the zigzag silicene nanoribbon can be used as an efficient spin filter and spin modulation device.
Nanostructured permanent magnets are gaining increasing interest and importance for applications such as generators and motors. Thermal management is a key concern since performance of permanent magnets decreases with temperature. We investigated the magnetic and thermal transport properties of rare-earth free nanostructured SrFe12O19 magnets produced by the current activated pressure assisted densification. The synthesized magnets have aligned grains such that their magnetic easy axis is perpendicular to their largest surface area to maximize their magnetic performance. The SrFe12O19 magnets have fine grain sizes in the cross-plane direction and substantially larger grain sizes in the in-plane direction. It was found that this microstructure results in approximately a factor of two higher thermal conductivity in the in-plane direction, providing an opportunity for effective cooling. The phonons are the dominant heat carriers in this type of permanent magnets near room temperature. Temperature and direction dependent thermal conductivity measurements indicate that both Umklapp and grain boundary scattering are important in the in-plane direction, where the characteristic grain size is relatively large, while grain boundary scattering dominates the cross-plane thermal transport. The investigated nano/microstructural design strategy should translate well to other material systems and thus have important implications for thermal management of nanostructured permanent magnets.
Atomically transparent vertically aligned ZnO-based van der Waals material have been developed by surface passivation and encapsulation with atomic layers of MgO using materials by design; the physical properties investigated. The passivation and encapsulation led to a remarkable improvement in optical and electronic properties. The valence-band offset $Delta E_v$ between MgO and ZnO, ZnO and MgO/ZnO, and ZnO and MgO/ZnO/MgO heterointerfaces are determined to be 0.37 $pm$0.02, -0.05$pm$0.02, and -0.11$pm$0.02 eV, respectively; the conduction-band offset $Delta E_c$ is deduced to be 0.97$pm$0.02, 0.46$pm$0.02, and 0.59$pm$0.02 eV indicating straddling type-I in MgO and ZnO, and staggering type-II heterojunction band alignment in ZnO and the various heterostructures. The band-offsets and interfacial charge transfer are used to explain the origin of $n$-type conductivity in the superlattices. Enhanced optical absorption due to carrier confinement in the layers demonstrates that MgO is an excellent high-$kappa$ dielectric gate oxide for encapsulating ZnO-based optoelectronic devices.
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