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Register a new userEnhanced transport length of spin-helical Dirac fermions in disordered 3D topological insulators
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The transport length $l_textrm{tr}$ and the mean free path $l_textrm{e}$ are experimentally determined for bulk and surface states in a Bi$_2$Se$_3$ nanoribbon by quantum transport and transconductance measurements. We show that the anisotropic scattering of spin-helical Dirac fermions results in a strong enhancement of $l_textrm{tr}$, which confirms theoretical predictions cite{Culcer2010}. Despite strong disorder ($l_textrm{e}approx30$~nm), our result further points to the long-range nature of the scattering potential, giving a large ratio $l_textrm{tr}/l_textrm{e}approx8$ that is likely limited by a finite bulk/surface coupling. This suggests that the spin-flip length could reach the micron size in disordered 3D topological insulator nanostructures with a reduced bulk doping, even if due to charge compensation.
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We report on the observation of photogalvanic effects in epitaxially grown Sb_2Te_3 three-dimensional (3D) topological insulators (TI). We show that asymmetric scattering of Dirac electrons driven back and forth by the terahertz electric field results in a dc electric current. Due to the symmetry filtration the dc current is generated in the surface electrons only and provides an opto-electronic access to probe the electric transport in TI, surface domains orientation and details of electron scattering even in 3D TI at room temperature where conventional surface electron transport is usually hindered by the high carrier density in the bulk.
This study shows that a terahertz (THz) wave can be generated from the (001) surface of cleaved Bi$_{textrm{2}}$Se$_{textrm{3}}$ and Cu-doped Bi$_{textrm{2}}$Se$_{textrm{3}}$ single crystals using 800 nm femtosecond pulses. The generated THz power is strongly dependent on the carrier concentration of the crystals. An examination of the dependence reveals the two-channel free carrier absorption to which Dirac fermions are indispensable. Dirac fermions in Bi$_{textrm{2}}$Se$_{textrm{3}}$ are significantly better absorbers of THz radiation than bulk carriers at room temperature. Moreover, the characteristics of THz emission confirm the existence of a recently proposed surface phonon branch that is normalized by Dirac fermions.
The discovery of topologically protected boundary states in topological insulators opens a new avenue toward exploring novel transport phenomena. The one-way feature of boundary states against disorders and impurities prospects great potential in applications of electronic and classical wave devices. Particularly, for the 3D higher-order topological insulators, it can host hinge states, which allow the energy to transport along the hinge channels. However, the hinge states haveonly been observed along a single hinge, and a natural question arises: whether the hinge states can exist simultaneously on all the three independent directions of one sample? Here we theoretically predict and experimentally observe the hinge states on three different directions of a higher-order topological phononic crystal, and demonstrate their robust one-way transport from hinge to hinge. Therefore, 3D topological hinge transport is successfully achieved. The novel sound transport may serve as the basis for acoustic devices of unconventional functions.
Electron systems that possess light-like dispersion relations or the conical Dirac spectrum, such as graphene and bismuth, have recently been shown to harbor unusual collective states in high magnetic fields. Such states are possible because their light-like electrons come in spin pairs that are chiral,which means that their direction of propagation is tied to a quantity called pseudospin that describes their location in the crystal lattice. An emerging direction in quantum materials research is the manipulation of atomic spin-orbit coupling to simulate the effect of a spin dependent magnetic field,in attempt to realize novel spin phases of matter. This effect has been proposed to realize systems consisting of unpaired Dirac cones that are helical, meaning their direction of propagation is tied to the electron spin itself, which are forbidden to exist in graphene or bismuth. The experimental existence of topological order can not be determined without spin-resolved measurements. Here we report a spin-and angle-resolved photoemission study of the hexagonal surface of the Bi2Te3 and Bi{2-x}MnxTe3 series, which is found to exhibit a single helical Dirac cone that is fully spin-polarized. Our observations of a gap in the bulk spin-degenerate band and a spin-resolved surface Dirac node close to the chemical potential show that the low energy dynamics of Bi2Te3 is dominated by the unpaired spin-helical Dirac modes. Our spin-texture measurements prove the existence of a rare topological phase in this materials class for the first time, and suggest its suitability for novel 2D Dirac spin device applications beyond the chiral variety or traditional graphene.
We experimentally investigate the effect of electron temperature on transport in the two-dimensional Dirac surface states of the three-dimensional topological insulator HgTe. We find that around the minimal conductivity point, where both electrons and holes are present, heating the carriers with a DC current results in a non-monotonic differential resistance of narrow channels. We show that the observed initial increase in resistance can be attributed to electron-hole scattering, while the decrease follows naturally from the change in Fermi energy of the charge carriers. Both effects are governed dominantly by a van Hove singularity in the bulk valence band. The results demonstrate the importance of interband electron-hole scattering in the transport properties of topological insulators.
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