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Register a new userEnhancement of critical current density and mechanism of vortex pinning in H$^+$-irradiated FeSe single crystal
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In this report, we comprehensively study the effect of H$^+$ irradiation on the critical current density, $J_c$, and vortex pinning in FeSe single crystal. It is found that the value of $J_c$ for FeSe is enhanced more than twice after 3-MeV H$^+$ irradiation. The scaling analyses of the vortex pinning force based on the Dew-Hughes model reveal that the H$^+$ irradiation successfully introduce point pinning centers into the crystal. We also find that the vortex creep rates are strongly suppressed after irradiation. Detailed analyses of the critical current dependent pinning energy based on the collective creep theory and extend Maleys method show that the H$^+$ irradiation enhances the value of $J_c$ before the flux creep, and also reduces the size of flux bundle, which will further reduce the field dependence of $J_c$ due to vortex motion.
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The transport properties, upper critical fields, superconducting anisotropy, and critical current density in an iso-valent phosphorus-doped BaFe2As2 single crystal close to optimum doping are investigated in this report. Temperature dependent resistivity and susceptibility show a superconducting transition temperature, Tc, just below 31 K both with sharp transitions. The upper critical field parallel to the ab-plane, Hc2^ab, is above 77 Tesla while that along the c-axis direction, Hc2^c, is just above 36 Tesla, yielding a low superconducting anisotropy ratio ~ 2. The estimated inter-plane coherence length based on the Ginzburg-Landau (G-L) theory indicates BaFe2(As0.68P0.32)2 is still above the point for a dimensional crossover inferring the superconducting layers are not weakly-coupled in this system. The critical current density at 5 K obtained from magnetization loops measurement show a modest Jc as high as 10^5 A/cm2.
Doping of MgB2 by nano-SiC and its potential for improvement of flux pinning was studied for MgB2-x(SiC)x/2 with x = 0, 0.2 and 0.3 and a 10wt% nano-SiC doped MgB2 samples. Co-substitution of B by Si and C counterbalanced the effects of single-element doping, decreasing Tc by only 1.5K, introducing pinning centres effective at high fields and temperatures and enhancing Jc and Hirr significantly. Compared to the non-doped sample, Jc for the 10wt% doped sample increased by a factor of 32 at 5K and 8T, 42 at 20K and 5T, and 14 at 30K and 2T. At 20K, which is considered to be a benchmark operating temperature for MgB2, the best Jc for the doped sample was 2.4x10^5A/cm2 at 2T, which is comparable to Jc of the best Ag/Bi-2223 tapes. At 20K and 4T, Jc was 36,000A/cm2, which was twice as high as for the best MgB2 thin films and an order of magnitude higher than for the best Fe/MgB2 tapes. Because of such high performance, it is anticipated that the future MgB2 conductors will be made using the formula of MgBxSiyCz instead of the pure MgB2.
The flux pinning force density (Fp) of the single crystalline FeTe0.60Se0.40 superconductor has been calculated from the magnetization measurements. The normalized Fp versus h (=H/Hirr) curves are scaled using the Dew-Hughes formula to underline the pinning mechanism in the compound. The obtained values of pinning parameters p and q indicate the vortex pinning by the mixing of the surface and the point core pinning of the normal centers. The vortex phase diagram has also been drawn for the first time for the FeTe0.60Se0.40, which has very high values of critical current density Jc ~ 1.10(5) Amp/cm2 and the upper critical field Hc2(0) = 65T, with a reasonably high transition temperature Tc =14.5K.
m-H loops for virgin and neutron irradiated bulk and powder samples of MgB_{2} were measured in the temperature range 5-30 K in magnetic field B<= 1 T. The irradiation at thermal neutron fluences 9*10^{13} and 4.5*10^{14} cm^{-2} caused very small enhancement of m-H loops at lower temperatures (T<20 K), whereas the effect at high temperatures was unclear due to difficulty in achieving exactly the same measurement temperature prior and after irradiation. However, the irradiation at 4.5*10^{15} cm^{-2} produced clear enhancement of m-H loops (hence J_{c}) at all investigated temperatures, which provides the evidence for the enhancement of flux pinning in MgB_{2} due to ion tracks resulting from n+^{10}B reaction. The potential of this technique for the enhancement of flux pinning in high temperature superconductors is briefly discussed.
We report measurements of the field and angular dependences of Jc of truly epitaxial Co-doped BaFe2As2 thin films grown on SrTiO3/(La,Sr)(Al,Ta)O3 with different SrTiO3 template thicknesses. The films show Jc comparable to Jc of single crystals and a maximum pinning force Fp(0.6Tc) > 5 GN/m3 at H/Hirr ~ 0.5 indicative of strong vortex pinning effective up to high fields. Due to the strong correlated c-axis pinning, Jc for field along the c-axis exceeds Jc for H//ab plane, inverting the expectation of the Hc2 anisotropy. HRTEM reveals that the strong vortex pinning is due to a high density of nanosize columnar defects.
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