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Register a new userRoute towards Localization for Quantum Anomalous Hall Systems with Chern Number 2
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The quantum anomalous Hall system with Chern number 2 can be destroyed by sufficiently strong disorder. During its process towards localization, it was found that the electronic states will be directly localized to an Anderson insulator (with Chern number 0), without an intermediate Hall plateau with Chern number 1. Here we investigate the topological origin of this phenomenon, by calculating the band structures and Chern numbers for disordered supercells. We find that on the route towards localization, there exists a hidden state with Chern number 1, but it is too short and too fluctuating to be practically observable. This intermediate state cannot be stabilized even after some smart design of the model and this should be a universal phenomena for insulators with high Chern numbers. By performing numerical scaling of conductances, we also plot the renormalization group flows for this transition, with Chern number 1 state as an unstable fixed point. This is distinct from known results, and can be tested by experiments and further theoretical analysis.
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The quantum anomalous Hall (QAH) state is a two-dimensional topological insulating state that has quantized Hall resistance of h/Ce2 and vanishing longitudinal resistance under zero magnetic field, where C is called the Chern number. The QAH effect has been realized in magnetic topological insulators (TIs) and magic-angle twisted bilayer graphene. Despite considerable experimental efforts, the zero magnetic field QAH effect has so far been realized only for C = 1. Here we used molecular beam epitaxy to fabricate magnetic TI multilayers and realized the QAH effect with tunable Chern number C up to 5. The Chern number of these QAH insulators is tuned by varying the magnetic doping concentration or the thickness of the interior magnetic TI layers in the multilayer samples. A theoretical model is developed to understand our experimental observations and establish phase diagrams for QAH insulators with tunable Chern numbers. The realization of QAH insulators with high tunable Chern numbers facilitates the potential applications of dissipationless chiral edge currents in energy-efficient electronic devices and opens opportunities for developing multi-channel quantum computing and higher-capacity chiral circuit interconnects.
We show that an energy gap is induced in graphene by light-matter coupling to a circularly polarized photon mode in a cavity. Using many-body perturbation theory we compute the electronic spectra which exhibit photon-dressed sidebands akin to Floquet sidebands for laser-driven materials. In contrast with Floquet topological insulators, in which a strictly quantized Hall response is induced by light only for off-resonant driving in the high-frequency limit, the photon-dressed Dirac fermions in the cavity show a quantized Hall response characterized by an integer Chern number. Specifically for graphene we predict that a Hall conductance of $2 e^2/h$ can be induced in the low-temperature limit.
We theoretically investigate the localization mechanism of quantum anomalous Hall Effect (QAHE) with large Chern numbers $mathcal{C}$ in bilayer graphene and magnetic topological insulator thin films, by applying either nonmagnetic or spin-flip (magnetic) disorders. We show that, in the presence of nonmagnetic disorders, the QAHEs in both two systems become Anderson insulating as expected when the disorder strength is large enough. However, in the presence of spin-flip disorders, the localization mechanisms in these two host materials are completely distinct. For the ferromagnetic bilayer graphene with Rashba spin-orbit coupling, the QAHE with $mathcal{C}=4$ firstly enters a Berry-curvature mediated metallic phase, and then becomes localized to be Anderson insulator along with the increasing of disorder strength. While in magnetic topological insulator thin films, the QAHE with $mathcal{C=N}$ firstly enters a Berry-curvature mediated metallic phase, then transitions to another QAHE with ${mathcal{C}}={mathcal{N}}-1$ along with the increasing of disorder strength, and is finally localized to the Anderson insulator after ${mathcal{N}}-1$ cycling between the QAHE and metallic phases. For the unusual findings in the latter system, by analyzing the Berry curvature evolution, it is known that the phase transitions originate from the exchange of Berry curvature carried by conduction (valence) bands. At the end, we provide a phenomenological picture related to the topological charges to help understand the underlying physical origins of the two different phase transition mechanisms.
Due to the potential applications in the low-power-consumption spintronic devices, the quantum anomalous Hall effect (QAHE) has attracted tremendous attention in past decades. However, up to now, QAHE was only observed experimentally in topological insulators with Chern numbers C= 1 and 2 at very low temperatures. Here, we propose three novel two-dimensional stable kagome ferromagnets Co3Pb3S2, Co3Pb3Se2and Co3Sn3Se2that can realize QAHE with high Chern number of |C|=3. Monolayers Co3Pb3S2, Co3Pb3Se2 and Co3Sn3Se2 possess the large band gap of 70, 77 and 63 meV with Curie temperature TC of 51, 42 and 46 K, respectively. By constructing a heterostructure Co3Sn3Se2/MoS2, its TC is enhanced to 60 K and the band gap keeps about 60 meV due to the tensile strain of 2% at the interface. For the bilayer compound Co6Sn5Se4, it becomes a half-metal, with a relatively flat plateau in its anomalous Hall conductivity corresponding to |C| = 3 near the Fermi level. Our results provide new topological nontrivial systems of kagome ferromagnetic monolayers and heterostructrues possessing QAHE with high Chern number |C| = 3 and large band gaps.
Simultaneous transport and scanning nanoSQUID-on-tip magnetic imaging studies in Cr-(Bi,Sb)$_2$Te$_3$ modulation-doped films reveal the presence of superparamagnetic order within the quantum anomalous Hall regime. In contrast to the expectation that a long-range ferromagnetic order is required for establishing the quantum anomalous Hall state, superparamagnetic dynamics of weakly interacting nanoscale magnetic islands is observed both in the plateau transition regions as well as within the fully quantized C=$pm$1 Chern plateaus. Modulation doping of the topological insulator films is found to give rise to significantly larger superparamagnetic islands as compared to uniform magnetic doping, evidently leading to enhanced robustness of the quantum anomalous Hall effect. Nonetheless, even in this more robust quantum state, attaining full quantization of transport coefficients requires magnetic alignment of at least 95% of the superparamagnetic islands. The superparamagnetic order is also found within the incipient C=0 zero Hall plateau, which may host an axion state if the top and bottom magnetic layers are magnetized in opposite directions. In this regime, however, a significantly lower level of island alignment is found in our samples, hindering the formation of the axion state. Comprehension and control of superparamagnetic dynamics is thus a key factor in apprehending the fragility of the quantum anomalous Hall state and in enhancing the endurance of the different quantized states to higher temperatures for utilization of robust topological protection in novel devices.
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