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Register a new userNanostructuring Graphene by Dense Electronic Excitation
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Added by
Marika Schleberger Y
Publication date
2015
fields
Physics
and research's language is
English
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The ability to manufacture tailored graphene nanostructures is a key factor to fully exploit its enormous technological potential. We have investigated nanostructures created in graphene by swift heavy ion induced folding. For our experiments, single layers of graphene exfoliated on various substrates and freestanding graphene have been irradiated and analyzed by atomic force and high resolution transmission electron microscopy as well as Raman spectroscopy. We show that the dense electronic excitation in the wake of the traversing ion yields characteristic nanostructures each of which may be fabricated by choosing the proper irradiation conditions. These nanostructures include unique morphologies such as closed bilayer edges with a given chirality or nanopores within supported as well as freestanding graphene. The length and orientation of the nanopore, and thus of the associated closed bilayer edge, may be simply controlled by the direction of the incoming ion beam. In freestanding graphene, swift heavy ion irradiation induces extremely small openings, offering the possibility to perforate graphene membranes in a controlled way.
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Graphene is expected to be rather insensitive to ionizing particle radiation. We demonstrate that single layers of exfoliated graphene sustain significant damage from irradiation with slow highly charged ions. We have investigated the ion induced changes of graphene after irradiation with highly charged ions of different charge states (q = 28-42) and kinetic energies E_kin = 150-450 keV. Atomic force microscopy images reveal that the ion induced defects are not topographic in nature but are related to a significant change in friction. To create these defects, a minimum charge state is needed. In addition to this threshold behaviour, the required minimum charge state as well as the defect diameter show a strong dependency on the kinetic energy of the projectiles. From the linear dependency of the defect diameter on the projectile velocity we infer that electronic excitations triggered by the incoming ion in the above-surface phase play a dominant role for this unexpected defect creation in graphene.
We investigate electronic transport property of a graphene monolayer covered by a graphene nanoribbon. We demonstrate that electronic transmission of a monolayer can be reduced when covered by a nanoribbon. The transmission reduction occurs at different energies determined by the width of nanoribbon. We explain the transmission reduction by using interference between wavefunctions in the monolayer and the nanoribbon. Furthermore, we show the transmission reduction of a monolayer is combinable when covered by more than one nanoribbon and propose a concept of combination of control for nano-application design.
First thermoelectric properties measurements on bulk nanostructured Ba8Ga16Ge30 clathrate-I are presented. A sol-gel-calcination route was developed for preparing amorphous nanosized precursor oxides. The further reduction of the oxides led to quantitative yield of crystalline nanosized Ba8Ga16Ge30 clathrate-I. TEM investigations show the clathrate nanoparticles retain the size and morphology of the precursor oxides. The clathrate nanoparticles contain mainly thin plates (approx. 300 nm x 300 nm x 50 nm) and a small amount of nanospheres (diameter ~ 10 nm). SAED patterns confirm the clathrate-I structure type for both morphologies. The powders were compacted via Spark Plasma Sintering (SPS) to obtain a bulk nano-structured material. The Seebeck coefficient S, measured on low-density samples (53% of {delta}x-ray), reaches -145 {mu}V/k at 375 {deg}C. The ZT values are quite low (0.02) due to the high resistivity of the sample (two orders of magnitude larger than bulk materials) and the low sample density. The trend of the temperature dependence of S is in agreement with the values obtained from electronic structure calculations and semi-classical Boltzmann transport theory within the constant scattering approximation. The total thermal conductivity (1.61 W/mK), measured on high density samples (93% of {delta}x-ray), shows a reduction of 20-25% in relation to the bulk materials (2.1 W/mK). A further shaping of the sample for the Seebeck coefficient and electrical conductivity measurements was not possible due to the presence of cracks. An improvement on the design of the pressing tools, loading of the sample and profile of the applied pressure will enhance the mechanical stability of the samples. These investigations are now in progress.
We investigated the specific electronic energy deposition by protons and He ions with keV energies in different transition metal nitrides of technological interest. Data were obtained from two different time-of-flight ion scattering setups and show excellent agreement. For protons interacting with light nitrides, i.e. TiN, VN and CrN, very similar stopping cross sections per atom were found, which coincide with literature data of N2 gas for primary energies <= 25 keV. In case of the chemically rather similar nitrides with metal constituents from the 5th and 6th period, i.e. ZrN and HfN, the electronic stopping cross sections were measured to exceed what has been observed for molecular N2 gas. For He ions, electronic energy loss in all nitrides was found to be significantly higher compared to the equivalent data of N2 gas. Additionally, deviations from velocity proportionality of the observed specific electronic energy loss are observed. A comparison with predictions from density functional theory for protons and He ions yields a high apparent efficiency of electronic excitations of the target for the latter projectile. These findings are considered to indicate the contributions of additional mechanisms besides electron hole pair excitations, such as electron capture and loss processes of the projectile or promotion of target electrons in atomic collisions.
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