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Register a new userTemperature induced Lifshitz transition in WTe2
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We use ultra-high resolution, tunable, VUV laser-based, angle-resolved photoemission spectroscopy (ARPES) and temperature and field dependent resistivity and thermoelectric power (TEP) measurements to study the electronic properties of WTe2, a compound that manifests exceptionally large, temperature dependent magnetoresistance. The temperature dependence of the TEP shows a change of slope at T=175 K and the Kohler rule breaks down above 70-140 K range. The Fermi surface consists of two electron pockets and two pairs of hole pockets along the X-Gamma-X direction. Upon increase of temperature from 40K, the hole pockets gradually sink below the chemical potential. Like BaFe2As2, WTe2 has clear and substantial changes in its Fermi surface driven by modest changes in temperature. In WTe2, this leads to a rare example of temperature induced Lifshitz transition, associated with the complete disappearance of the hole pockets. These dramatic changes of the electronic structure naturally explain unusual features of the transport data.
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The topological materials have attracted much attention recently. While three-dimensional topological insulators are becoming abundant, two-dimensional topological insulators remain rare, particularly in natural materials. ZrTe5 has host a long-standing puzzle on its anomalous transport properties; its underlying origin remains elusive. Lately, ZrTe5 has ignited renewed interest because it is predicted that single-layer ZrTe5 is a two-dimensional topological insulator and there is possibly a topological phase transition in bulk ZrTe5. However, the topological nature of ZrTe5 is under debate as some experiments point to its being a three-dimensional or quasi-two-dimensional Dirac semimetal. Here we report high-resolution laser-based angle-resolved photoemission measurements on ZrTe5. The electronic property of ZrTe5 is dominated by two branches of nearly-linear-dispersion bands at the Brillouin zone center. These two bands are separated by an energy gap that decreases with decreasing temperature but persists down to the lowest temperature we measured (~2 K). The overall electronic structure exhibits a dramatic temperature dependence; it evolves from a p-type semimetal with a hole-like Fermi pocket at high temperature, to a semiconductor around ~135 K where its resistivity exhibits a peak, to an n-type semimetal with an electron-like Fermi pocket at low temperature. These results indicate a clear electronic evidence of the temperature-induced Lifshitz transition in ZrTe5. They provide a natural understanding on the underlying origin of the resistivity anomaly at ~135 K and its associated reversal of the charge carrier type. Our observations also provide key information on deciphering the topological nature of ZrTe5 and possible temperature-induced topological phase transition.
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