No Arabic abstract
We report on the fabrication of an ultrahigh quality factor, bottle-like microresonator from a microcapillary, and the realization of Raman lasing therein at pump wavelengths of $1.55~mathrm{mu m}$ and $780~mathrm{nm}$. The dependence of the Raman laser threshold on mode volume is investigated. The mode volume of the fundamental bottle mode is calculated and compared with that of a microsphere. Third-order cascaded Raman lasing was observed when pumped at $780~mathrm{nm}$. In principle, Raman lasing in a hollow bottle-like microresonator can be used in sensing applications. As an example, we briefly discuss the possibility of a high dynamic range, high resolution aerostatic pressure sensor.
The evanescent coupling of light between a whispering-gallery-mode bottle microresonator and a sub-wavelength-diameter coupling fiber is actively stabilized by means of a Pound-Drever-Hall technique. We demonstrate the stabilization of a critically coupled resonator with a control bandwidth of 0.1 Hz, yielding a residual transmission of (9 pm 3) times 10^-3 for more than an hour. Simultaneously, the frequency of the resonator mode is actively stabilized.
Propagation of light in a highly scattering medium is among the most fascinating optical effect that everyone experiences on an everyday basis and possesses a number of fundamental problems which have yet to be solved. Conventional wisdom suggests that non-linear effects do not play a significant role because the diffusive nature of scattering acts to spread the intensity, dramatically weakening these effects. We demonstrate the first experimental evidence of lasing on a Raman transition in a bulk three-dimensional random media. From a practical standpoint, Raman transitions allow for spectroscopic analysis of the chemical makeup of the sample. A random Raman laser could serve as a bright Raman source allowing for remote, chemically specific, identification of powders and aerosols. Fundamentally, the first demonstration of this new light source opens up an entire new field of study into non-linear light propagation in turbid media, with the most notable application related to non-invasive biomedical imaging.
We report the first investigation on continuous-wave Raman lasing in high-quality-factor aluminum nitride (AlN) microring resonators. Although wurtzite AlN is known to exhibit six Raman-active phonons, single-mode Raman lasing with low threshold and high slope efficiency is demonstrated. Selective excitation of A$_1^mathrm{TO}$ and E$_2^mathrm{high}$ phonons with Raman shifts of $sim$612 and 660 cm$^{-1}$ is observed by adjusting the polarization of the pump light. A theoretical analysis of Raman scattering efficiency within ${c}$-plane (0001) of AlN is carried out to help account for the observed lasing behavior. Bidirectional lasing is experimentally confirmed as a result of symmetric Raman gain in micro-scale waveguides. Furthermore, second-order Raman lasing with unparalleled output power of $sim$11.3 mW is obtained, which offers the capability to yield higher order Raman lasers for mid-infrared applications.
Chalcogenide glass (ChG) is an attractive material for integrated nonlinear photonics due to its wide transparency and high nonlinearity, and its capability of being directly deposited and patterned on Silicon wafer substrates. It has a singular Raman effect among amorphous materials. Yet, the Raman lasing performance in high quality and chip integrated ChG microresonators remains unexplored. Here, we demonstrate an engineered Raman lasing dynamic based on home developed photonic integrated high-Q ChG microresonators. With a quality factor above 10^6, we achieve the record-low lasing threshold 3.25 mW among integrated planar photonic platforms. Both the single-mode Raman lasers and a broadband Raman-Kerr comb are observed and characterized, which is dependent on the dispersion of our flexible photonic platform and engineered via tuning the waveguide geometric size. The tunability of such a chipscale Raman laser is also demonstrated through tuning the pump wavelength and tuning the operating temperature on the chip. This allows for the access of single-mode lasing at arbitrary wavelengths in the range 1615-1755 nm. Our results may contribute to the understanding of rich Raman and Kerr nonlinear interactions in dissipative and nonlinear microresonators, and on application aspect, may pave a way to chip-scale efficient Raman lasers that is highly desired in spectroscopic applications in the infrared.
The realization of ultrahigh quality (Q) resonators regardless of the underpinning material platforms has been a ceaseless pursuit, because the high Q resonators provide an extreme environment of storage of light to enable observations of many unconventional nonlinear optical phenomenon with high efficiencies. Here, we demonstrate an ultra-high Q factor (7.1*10^6) microresonator on the 4H-silicon-carbide-on-insulator (4H-SiCOI) platform in which both c{hi}^(2) and c{hi}^(3) nonlinear processes of high efficiencies have been generated. Broadband frequency