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Register a new userProximity to Fermi-surface topological change in superconducting LaO0.54F0.46BiS2
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The electronic structure of nearly optimally-doped novel superconductor LaO$_{1-x}$F$_x$BiS$_2$ (${it x}$ = 0.46) was investigated using angle-resolved photoemission spectroscopy (ARPES). We clearly observed band dispersions from 2 to 6 eV binding energy and near the Fermi level (${it E}_{rm F}$), which are well reproduced by first principles calculations when the spin-orbit coupling is taken into account. The ARPES intensity map near ${it E}_{rm F}$ shows a square-like distribution around the $Gamma$(Z) point in addition to electronlike Fermi surface (FS) sheets around the X(R) point, indicating that FS of LaO$_{0.54}$F$_{0.46}$BiS$_2$ is in close proximity to the theoretically-predicted topological change.
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We study bulk electronic states of superconducting topological insulator, which is the promising candidate for topological superconductor. Recent experiments suggest that the three-dimensional Fermi surface evolves into two-dimensional one. We show that the superconducting energy gap structure on the Fermi surface systematically changes with this evolution. It is clarified that the bulk electronic properties such as spin-lattice relaxation rate and specific heat depend on the shape of the Fermi surface and the type of the energy gap function. These results serve as a guide to determine the pairing symmetry of Cu$_x$Bi$_2$Se$_3$.
The interplay between topological electronic structure and superconductivity has attracted tremendous research interests recently as they could induce topological superconductivity (TSCs) which may be used to realize topological qubits for quantum computation. Among various TSC candidates, superconducting BaSn3 (Tc ~ 4.4 K) has been predicted to be a topological Dirac semimetal (TDS) hosting two pairs of Dirac points along the G - A direction. Here, by combining the use of angle-resolved photoemission spectroscopy and ab initio calculations, we identified the predicted topological Dirac fermions and confirmed the TDS nature of the compound. In addition, we observed surface states connecting the Dirac points. Our observations demonstrate BaSn3 as a superconductor with nontrivial topological electronic structures.
High resolution laser-based angle-resolved photoemission measurements were carried out on an overdoped $Bi_2Sr_2CaCu_2O_{8+delta}$ superconductor with a Tc of 75 K. Two Fermi surface sheets caused by bilayer splitting are clearly identified with rather different doping levels: the bonding sheet corresponds to a doping level of 0.14 which is slightly underdoped while the antibonding sheet has a doping of 0.27 that is heavily overdoped, giving an overall doping level of 0.20 for the sample. Different superconducting gap sizes on the two Fermi surface sheets are revealed for the first time. The superconducting gap on the antibonding Fermi surface sheet follows a standard d-wave form while it deviates from the standard d-wave form for the bonding Fermi surface sheet. The maximum gap difference between the two Fermi surface sheets near the antinodal region is $sim$2 meV. These observations provide important information for studying the relationship between the Fermi surface topology and superconductivity, and the layer-dependent superconductivity in high temperature cuprate superconductors.
At an interface between a topological insulator (TI) and a conventional superconductor (SC), superconductivity has been predicted to change dramatically and exhibit novel correlations. In particular, the induced superconductivity by an $s$-wave SC in a TI can develop an order parameter with a $p$-wave component. Here we present experimental evidence for an unexpected proximity-induced novel superconducting state in a thin layer of the prototypical TI, Bi$_2$Se$_3$, proximity coupled to Nb. From depth-resolved magnetic field measurements below the superconducting transition temperature of Nb, we observe a local enhancement of the magnetic field in Bi$_2$Se$_3$ that exceeds the externally applied field, thus supporting the existence of an intrinsic paramagnetic Meissner effect arising from an odd-frequency superconducting state. Our experimental results are complemented by theoretical calculations supporting the appearance of such a component at the interface which extends into the TI. This state is topologically distinct from the conventional Bardeen-Cooper-Schrieffer state it originates from. To the best of our knowledge, these findings present a first observation of bulk odd-frequency superconductivity in a TI. We thus reaffirm the potential of the TI-SC interface as a versatile platform to produce novel superconducting states.
We study the proximity effect between the fully-gapped region of a topological insulator in direct contact with an s-wave superconducting electrode (STI) and the surrounding topological insulator flake (TI) in Au/Bi$_{1.5}$Sb$_{0.5}$Te$_{1.7}$Se$_{1.3}$/Nb devices. The conductance spectra of the devices show the presence of a large induced gap in the STI as well as the induction of superconducting correlations in the normal part of the TI on the order of the Thouless energy. The shape of the conductance modulation around zero-energy varies between devices and can be explained by existing theory of s-wave-induced superconductivity in SNN (S is a superconductor, N a superconducting proximized material and N is a normal metal) devices. All the conductance spectra show a conductance dip at the induced gap of the STI.
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