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Register a new userGrain rotation and lattice deformation during photoinduced chemical reactions revealed by in-situ X-ray nanodiffraction
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In-situ X-ray diffraction (XRD) and transmission electron microscopy (TEM) have been used to investigate many physical science phenomena, ranging from phase transitions, chemical reaction and crystal growth to grain boundary dynamics. A major limitation of in-situ XRD and TEM is a compromise that has to be made between spatial and temporal resolution. Here, we report the development of in-situ X-ray nanodiffraction to measure atomic-resolution diffraction patterns from single grains with up to 5 millisecond temporal resolution, and make the first real-time observation of grain rotation and lattice deformation during photoinduced chemical reactions. The grain rotation and lattice deformation associated with the chemical reactions are quantified to be as fast as 3.25 rad./sec. and as large as 0.5 Angstroms, respectively. The ability to measure atomic-resolution diffraction patterns from individual grains with several millisecond temporal resolution is expected to find broad applications in materials science, physics, chemistry, and nanoscience.
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Strain engineering of perovskite oxide thin films has proven to be an extremely powerful method for enhancing and inducing ferroelectric behavior. In ferroelectric thin films and superlattices, the polarization is intricately linked to crystal structure, but we show here that it can also play an important role in the growth process, influencing growth rates, relaxation mechanisms, electrical properties and domain structures. We have studied this effect in detail by focusing on the properties of BaTiO$_{3}$ thin films grown on very thin layers of PbTiO$_{3}$ using a combination of x-ray diffraction, piezoforce microscopy, electrical characterization and rapid in-situ x-ray diffraction reciprocal space maps during the growth using synchrotron radiation. Using a simple model we show that the changes in growth are driven by the energy cost for the top material to sustain the polarization imposed upon it by the underlying layer, and these effects may be expected to occur in other multilayer systems where polarization is present during growth. Our research motivates the concept of polarization engineering during the growth process as a new and complementary approach to strain engineering.
Chemical interaction and changes in local electronic structure of Cr, Fe, Co, Ni and Cu transition metals (TMs) upon formation of an $Al_{8}Co_{17}Cr_{17}Cu_{8}Fe_{17}Ni_{33}$ compositionally complex alloy (CCA) have been studied by X-ray absorption spectroscopy and X-ray photoelectron spectroscopy. It was found that upon CCA formation, occupancy of the Cr, Co and Ni 3d states changes and the maximum of the occupied and empty Ni 3d states density shifts away from Fermi level ($E_f$) by 0.5 and 0.6 eV, respectively, whereas the Cr 3d empty states maximum shifts towards $E_f$ by 0.3 eV, compared to the corresponding pure metals. The absence of significant charge transfer between the elements was established, pointing to the balancing of the 3d states occupancy change by involvement of delocalized 4s and 4p states into the charge redistribution. Despite the expected formation of strong Al-TMs covalent bonds, the Al role in the transformation of the TMs 3d electronic states is negligible. The work demonstrates a decisive role of Cr in the Ni local electronic structure transformation and suggests formation of directional Ni-Cr bonds with covalent character. These findings can be helpful for tuning deformation properties and phase stability of the CCA.
We applied angular X-ray Cross-Correlation analysis (XCCA) to scattering images from a femtosecond resolution LCLS X-ray free-electron laser (XFEL) pump-probe experiment with solvated PtPOP ([Pt$_2$(P$_2$O$_5$H$_2$)$_4$]$^{4-}$) metal complex molecules. The molecules were pumped with linear polarized laser pulses creating an excited state population with a preferred orientational (alignment) direction. Two time scales of $1.9pm1.5$ ps and $46pm10$ ps were revealed by model-independent XCCA, associated with an internal structural changes and rotational dephasing, respectively. Our studies illustrate the potential of XCCA to reveal hidden structural information in a model independent analysis of time evolution of solvated metal complex molecules.
Wehrenberg et. al. [Nature 550 496 (2017)] used ultrafast in situ x-ray diffraction at the LCLS x-ray free-electron laser facility to measure large lattice rotations resulting from slip and deformation twinning in shock-compressed laser-driven [110] fibre textured tantalum polycrystal. We employ a crystal plasticity finite element method model, with slip kinetics based closely on the isotropic dislocation-based Livermore Multiscale Model [Barton et. al., J. Appl. Phys. 109 (2011)], to analyse this experiment. We elucidate the link between the degree of lattice rotation and the kinetics of plasticity, demonstrating that a transition occurs at shock pressures of $sim$27 GPa, between a regime of relatively slow kinetics, resulting in a balanced pattern of slip system activation and therefore relatively small net lattice rotation, and a regime of fast kinetics, due to the onset of nucleation, resulting in a lop-sided pattern of deformation-system activation and therefore large net lattice rotations. We demonstrate a good fit between this model and experimental x-ray diffraction data of lattice rotation, and show that this data is constraining of deformation kinetics.
The stacking sequence of hexagonal close-packed and related crystals typically results in steps on vicinal {0001} surfaces that have alternating A and B structures with different growth kinetics. However, because it is difficult to experimentally identify which step has the A or B structure, it has not been possible to determine which has faster adatom attachment kinetics. Here we show that in situ microbeam surface X-ray scattering can determine whether A or B steps have faster kinetics under specific growth conditions. We demonstrate this for organo-metallic vapor phase epitaxy of (0001) GaN. X-ray measurements performed during growth find that the average width of terraces above A steps increases with growth rate, indicating that attachment rate constants are higher for A steps, in contrast to most predictions. Our results have direct implications for understanding the atomic-scale mechanisms of GaN growth and can be applied to a wide variety of related crystals.
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