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Register a new userReversibility of Superconducting Nb Weak Links Driven by the Proximity Effect in a Quantum Interference Device
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We demonstrate the role of proximity effect in the thermal hysteresis of superconducting constrictions. From the analysis of successive thermal instabilities in the transport characteristics of micron-size superconducting quantum interference devices with a well-controlled geometry, we obtain a complete picture of the different thermal regimes. These determine whether the junctions are hysteretic or not. Below the superconductor critical temperature, the critical current switches from a classical weak-link behavior to one driven by the proximity effect. The associated small amplitude of the critical current makes it robust with respect to the heat generation by phase-slips, leading to a non-hysteretic behavior.
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We have investigated the structural, magnetic and superconducting properties of [Nb(1.5nm)/Fe(x)]$_{10}$ superlattices deposited on a thick Nb(50nm) layer. Our investigation showed that the Nb(50nm) layer grows epitaxially at 800$^circ$C on Al$_2$O$_3$(1$bar{1}$02) substrate. Samples grown at this condition posses a high residual resistivity ratio of 15-20. By using neutron reflectometry we show that Fe/Nb superlattices with $x<$ 4 nm form a depth-modulated FeNb alloy with concentration of iron varying between 60% and 90%. This alloy has properties of a weak ferromagnet. Proximity of this weak ferromagnetic layer to a thick superconductor leads to an intermediate phase that is characterized by co-existing superconducting and normal-state domains. By increasing the thickness of the Fe layer to $x$ = 4 nm the intermediate phase disappears. We attribute the intermediate state to proximity induced non-homogeneous superconductivity in the periodic Fe/Nb structure.
We have used spin-polarized neutron reflectometry to investigate the magnetization profile of superlattices composed of ferromagnetic Gd and superconducting Nb layers. We have observed a partial suppression of ferromagnetic (F) order of Gd layers in [Gd($d_F$)/Nb(25nm)]$_{12}$ superlattices below the superconducting (S) transition of the Nb layers. The amplitude of the suppression decreases with increasing $d_F$. By analyzing the neutron spin asymmetry we conclude that the observed effect has an electromagnetic origin - the proximity-coupled S layers screen out the external magnetic field and thus suppress the F response of the Gd layers inside the structure. Our investigation demonstrates the considerable influence of electromagnetic effects on the magnetic properties of S/F systems.
We report the fabrication of a directly coupled superconducting quantum interference device (SQUID) magnetometer in MgB2 using a focused ion beam (FIB) to create Josephson junctions in a 70 nm thick film of MgB2. The SQUID shows a voltage modulation (deltaV) of 175 mV at a temperature of 10 K and operates over a temperature range from 10 K to 24 K. We find excellent agreement between the measured maximum transfer functions and those predicted by theory. We have measured the magnetic flux noise at 20 K to be as low as 14 micro Phi-0 per root Hz.
We propose a transistor-like circuit including two serially connected segments of a narrow superconducting nanowire joint by a wider segment with a capacitively coupled gate in between. This circuit is made of amorphous NbSi film and embedded in a network of on-chip Cr microresistors ensuring a sufficiently high external electromagnetic impedance. Assuming a virtual regime of quantum phase slips (QPS)in two narrow segments of the wire, leading to quantum interference of voltages on these segments, this circuit is dual to the dc SQUID. Our samples demonstrated appreciable Coulomb blockade voltage (analog of critical current of the SQUIDs) and periodic modulation of this blockade by an electrostatic gate (analog of flux modulation in the SQUIDs). The model of this QPS transistor is discussed.
A new method of preparation of radio-frequency superconducting quantum interference devices on MgB2 thin films is presented. The variable-thickness bridge was prepared by a combination of optical lithography and of the scratching by an atomic force microscope. The critical current of the nanobridge was 0.35 uA at 4.2 K. Non-contact measurements of the current-phase characteristics and of the critical current vs. temperature have been investigated on our structures.
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