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Register a new userElectron-phonon processes of the silicon-vacancy centre in diamond
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We investigate phonon induced electronic dynamics in the ground and excited states of the negatively charged silicon-vacancy ($mathrm{SiV}^-$) centre in diamond. Optical transition line widths, transition wavelength and excited state lifetimes are measured for the temperature range 4-350 K. The ground state orbital relaxation rates are measured using time-resolved fluorescence techniques. A microscopic model of the thermal broadening in the excited and ground states of the $mathrm{SiV}^-$ centre is developed. A vibronic process involving single-phonon transitions is found to determine orbital relaxation rates for both the ground and the excited states at cryogenic temperatures. We discuss the implications of our findings for coherence of qubit states in the ground states and propose methods to extend coherence times of $mathrm{SiV}^-$ qubits.
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Applications of negatively charged nitrogen-vacancy center in diamond exploit the centers unique optical and spin properties, which at ambient temperature, are predominately governed by electron-phonon interactions. Here, we investigate these interactions at ambient and elevated temperatures by observing the motional narrowing of the centers excited state spin resonances. We determine that the centers Jahn-Teller dynamics are much slower than currently believed and identify the vital role of symmetric phonon modes. Our results have pronounced implications for centers diverse applications (including quantum technology) and for understanding its fundamental properties.
We demonstrate that silicon-vacancy (SiV) centers in diamond can be used to efficiently generate coherent optical photons with excellent spectral properties. We show that these features are due to the inversion symmetry associated with SiV centers, and demonstrate generation of indistinguishable single photons from separate emitters in a Hong-Ou-Mandel (HOM) interference experiment.Prospects for realizing efficient quantum network nodes using SiV centers are discussed.
We characterize a high-density sample of negatively charged silicon-vacancy (SiV$^-$) centers in diamond using collinear optical multidimensional coherent spectroscopy. By comparing the results of complementary signal detection schemes, we identify a hidden population of ce{SiV^-} centers that is not typically observed in photoluminescence, and which exhibits significant spectral inhomogeneity and extended electronic $T_2$ times. The phenomenon is likely caused by strain, indicating a potential mechanism for controlling electric coherence in color-center-based quantum devices.
The silicon-vacancy ($mathrm{SiV}^-$) color center in diamond has attracted attention due to its unique optical properties. It exhibits spectral stability and indistinguishability that facilitate efficient generation of photons capable of demonstrating quantum interference. Here we show high fidelity optical initialization and readout of electronic spin in a single $mathrm{SiV}^-$ center with a spin relaxation time of $T_1=2.4pm0.2$ ms. Coherent population trapping (CPT) is used to demonstrate coherent preparation of dark superposition states with a spin coherence time of $T_2^star=35pm3$ ns. This is fundamentally limited by orbital relaxation, and an understanding of this process opens the way to extend coherences by engineering interactions with phonons. These results establish the $mathrm{SiV}^-$ center as a solid-state spin-photon interface.
We study single silicon vacancy (SiV) centres in chemical vapour deposition (CVD) nanodiamonds on iridium as well as an ensemble of SiV centres in a high quality, low stress CVD diamond film by using temperature dependent luminescence spectroscopy in the temperature range 5-295 K. We investigate in detail the temperature dependent fine structure of the zero-phonon-line (ZPL) of the SiV centres. The ZPL transition is affected by inhomogeneous as well as temperature dependent homogeneous broadening and blue shifts by about 20 cm-1 upon cooling from room temperature to 5 K. We employ excitation power dependent g(2) measurements to explore the temperature dependent internal population dynamics of single SiV centres and infer almost temperature independent dynamics.
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