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Register a new userInvestigation of intrinsic magnetodielectric effect in La2CoMnO6: Role of magnetic disorder
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We present a large magnetodielectric (MD) effect of 65 % at 100 kHz with 5 T field in B-site ordered La2CoMnO6 (LCMO) polycrystalline sample. Frequency and temperature dependent impedance and dielectric studies under magnetic field divulge both intrinsic and extrinsic origins for the observed MD effect. The temperature dependent Raman spectroscopy measurement has shown spin-lattice coupling that supports the intrinsic origin of the observed large MD response in LCMO. Extrinsic contributions to MD response mainly originate from disorder and interface effects; here, we signify this by hole carrier (Sr) doping at the A-site of the ordered LCMO sample. The comparison study has disclosed that with the disorder, the intrinsic polarization due to asymmetric hopping decreases significantly, and the disorder induced transport dominates in both MD and magnetoresistance behaviour with close resemblance.
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We have carried out dc magnetization (M), heat-capacity (C) and dielectric studies down to 2K for the compound GdCrTiO5, crystallizing in orthorhombic Pbam structure, in which well-known multiferroics RMn2O5 (R= Rare-earths) form. The points of emphasis are: (i) The magnetic ordering temperature of Cr appears to be suppressed compared to that in isostructural Nd counterpart, NdCrTiO5, for which the Neel temperature is about 21 K. This finding on the Gd compound suggests that Nd 4f orbital plays a role on the magnetism of Cr in contrast to a proposal long ago. (ii) Dielectric constant does not exhibit any notable feature below about 30 K in the absence of external magnetic field, but a peak appears and gets stronger with the application of external magnetic fields, supporting the existence of magnetodielectric coupling. (iii) The dielectric anomalies appear even near 100 K, which can be attributed to short-range magnetic-order. We also observe a gain in spectral weight below about 150 K in Raman spectra in the frequency range 150 to 400 cm-1, which could be magnetic in origin supporting short-range magnetic order. It is of interest to explore whether geometrically frustration plays any role on the dielectric properties of this family, as in the case of RMn2O5.
Intrinsic anomalous Nernst effect (ANE), like its Hall counterpart, is generated by Berry curvature of electrons in solids. Little is known about its response to disorder. In contrast, the link between the amplitude of the ordinary Nernst coefficient and the mean-free-path is extensively documented. Here, by studying Co$_3$Sn$_2$S$_2$, a topological half-metallic semimetal hosting sizable and recognizable ordinary and anomalous Nernst responses, we demonstrate an anti-correlation between the amplitude of ANE and carrier mobility. We argue that the observation, paradoxically, establishes the intrinsic origin of the ANE in this system. We conclude that various intrinsic off-diagonal coefficients are set by the way the Berry curvature is averaged on a grid involving the mean-free-path, the Fermi wavelength and the de Broglie thermal length.
CoSeO$_4$ has a structure consisting of edge-sharing chains of Co$^{2+}$ octahedra which are held together by SeO$_4^{2-}$ tetrahedra via shared oxygen atoms at the edges of the octahedra. DC magnetization measurements indicate a transition to an ordered state below 30 K. Powder neutron diffraction refinements suggest an ordered state with two unique antiferrromagnetic chains within the unit cell. Isothermal magnetization measurements indicate a temperature-dependent field-induced magnetic transition below the ordering temperature. From neutron diffraction, we find this corresponds to a realignment of spins from the canted configuration towards the c-axis. The dielectric constant shows a change in slope at the magnetic ordering temperature as well as a quadratic dependence on the external magnetic field.
Topological materials are expected to show distinct transport signatures due to their unique band-inversion character and band-crossing points. However, the intentional modulation of such topological responses by experimentally feasible means is less explored. Here, an unusual elevation of anomalous Hall effect (AHE) is obtained in electron(Ni)-doped magnetic Weyl semimetal Co3-xNixSn2S2, showing peak values of anomalous Hall-conductivity, Hall-angle and Hall-factor at a relatively low doping level of x = 0.11. The separation of intrinsic and extrinsic contributions to total AHE using TYJ scaling model indicates that such significant enhancement is dominated by the intrinsic mechanism of electronic Berry curvature. Theoretical calculations reveal that compared with the Fermi-level shifting from electron filling, a usually overlooked effect of doping, i.e., local disorder, imposes a striking effect on broadening the bands and narrowing the inverted gap, and thus results in an elevation of the integrated Berry curvature. Our results not only realize the enhancement of AHE in a magnetic Weyl semimetal, but also provide a practical design principle to modulate the bands and transport properties in topological materials, by exploiting the disorder effect of doping.
Topological materials have recently attracted considerable attention among materials scientists as their properties are predicted to be protected against perturbations such as lattice distortion and chemical substitution. However, any experimental proof of such robustness is still lacking. In this study, we experimentally demonstrate that the topological properties of the ferromagnetic kagome compound Co3Sn2S2 are preserved upon Ni substitution. We systematically vary the Ni content in Co3Sn2S2 single crystals and study their magnetic and anomalous transport properties. For the intermediate Ni substitution, we observe a remarkable increase in the coercive field while still maintaining significant anomalous Hall conductivity. The large anomalous Hall conductivity of these compounds is intrinsic, consistent with first-principle calculations, which proves its topological origin. Our results can guide further studies on the chemical tuning of topological materials for better understanding.
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