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Register a new userDistinguishing bulk and surface electron-phonon coupling in the topological insulator Bi2Se3 using time-resolved photoemission spectroscopy
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We report time- and angle-resolved photoemission spectroscopy measurements on the topological insulator Bi2Se3. We observe oscillatory modulations of the electronic structure of both the bulk and surface states at a frequency of 2.23 THz due to coherent excitation of an A1g phonon mode. A distinct, additional frequency of 2.05 THz is observed in the surface state only. The lower phonon frequency at the surface is attributed to the termination of the crystal and thus reduction of interlayer van der Waals forces, which serve as restorative forces for out-of-plane lattice distortions. DFT calculations quantitatively reproduce the magnitude of the surface phonon softening. These results represent the first band-resolved evidence of the A1g phonon mode coupling to the surface state in a topological insulator.
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High resolution laser-based angle-resolved photoemission measurements have been carried out on Sb(111) single crystal. Two kinds of Fermi surface sheets are observed that are derived from the topological surface states: one small hexagonal electron-like Fermi pocket around $Gamma$ point and the other six elongated lobes of hole-like Fermi pockets around the electron pocket. Clear Rashba-type band splitting due to the strong spin-orbit coupling is observed that is anisotropic in the momentum space. Our super-high-resolution ARPES measurements reveal no obvious kink in the surface band dispersions indicating a weak electron-phonon interaction in the surface states. In particular, the electron scattering rate for these topological surface states is nearly a constant over a large energy window near the Fermi level that is unusual in terms of the conventional picture.
We characterize the topological insulator Bi$_2$Se$_3$ using time- and angle- resolved photoemission spectroscopy. By employing two-photon photoemission, a complete picture of the unoccupied electronic structure from the Fermi level up to the vacuum level is obtained. We demonstrate that the unoccupied states host a second, Dirac surface state which can be resonantly excited by 1.5 eV photons. We then study the ultrafast relaxation processes following optical excitation. We find that they culminate in a persistent non-equilibrium population of the first Dirac surface state, which is maintained by a meta-stable population of the bulk conduction band. Finally, we perform a temperature-dependent study of the electron-phonon scattering processes in the conduction band, and find the unexpected result that their rates decrease with increasing sample temperature. We develop a model of phonon emission and absorption from a population of electrons, and show that this counter-intuitive trend is the natural consequence of fundamental electron-phonon scattering processes. This analysis serves as an important reminder that the decay rates extracted by time-resolved photoemission are not in general equal to single electron scattering rates, but include contributions from filling and emptying processes from a continuum of states.
PtBi2 with a layered trigonal crystal structure was recently reported to exhibit an unconventional large linear magnetoresistance, while the mechanism involved is still elusive. Using high resolution angle-resolved photoemission spectroscopy, we present a systematic study on its bulk and surface electronic structure. Through careful comparison with first-principle calculations, our experiment distinguishes the low-lying bulk bands from entangled surface states, allowing the estimation of the real stoichiometry of samples. We find significant electron doping in PtBi2, implying a substantial Bi deficiency induced disorder therein. We discover a Dirac-cone-like surface state on the boundary of the Brillouin zone, which is identified as an accidental Dirac band without topological protection. Our findings exclude quantum-limit-induced linear band dispersion as the cause of the unconventional large linear magnetoresistance.
In order to exploit the intriguing optical properties of graphene it is essential to gain a better understanding of the light-matter interaction in the material on ultrashort timescales. Exciting the Dirac fermions with intense ultrafast laser pulses triggers a series of processes involving interactions between electrons, phonons and impurities. Here we study these interactions in epitaxial graphene supported on silicon carbide (semiconducting) and iridium (metallic) substrates using ultrafast time- and angle-resolved photoemission spectroscopy (TR-ARPES) based on high harmonic generation. For the semiconducting substrate we reveal a complex hot carrier dynamics that manifests itself in an elevated electronic temperature and an increase in linewidth of the $pi$ band. By analyzing these effects we are able to disentangle electron relaxation channels in graphene. On the metal substrate this hot carrier dynamics is found to be severely perturbed by the presence of the metal, and we find that the electronic system is much harder to heat up than on the semiconductor due to screening of the laser field by the metal.
We present an investigation on electronic structure of 1T-TiTe2 material via high-resolution angle-resolved photoemission spectroscopy (ARPES), utilizing tunable photon energy excitations. The typical semimetal-like electronic structure is observed and examined, where multiple hole pockets related to Te 5p bands and one electron pockets related to Ti 3d band are populated. The obtained results reveals i) a pronounced three-dimensional (3D) electronic structure of 1T-TiTe2 with typical semi-metallic features, for both the Ti 3d and the Te 5p states; ii) multiple Fermi surface (FS) sheets and complex band structure; and iii) an obvious kink in dispersion at an energy of about 18 meV below the Fermi energy, the first experimental observation of a kink structure in 1T-TiTe2, which may originate from electron-phonon coupling. These important and significant findings can help us to gain an in-depth understanding of the 3D electronic structure of semimetallic 1T- TiTe2.
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