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Register a new userSpin Seebeck Effect in Asymmetric Four-Terminal Systems with Rashba Spin-Orbit Coupling
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We propose a new type of the spin Seebeck effect (SSE) emerging from the Rashba spin-orbit coupling in asymmetric four-terminal electron systems. This system generates spin currents or spin voltages along the longitudinal direction parallel to the temperature gradient in the absence of magnetic fields. The remarkable result arises from the breaking of reflection symmetry along the transverse direction. In the meantime, the SSE along the transverse direction, so-called the spin Nernst effect, with spin currents or spin voltages perpendicular to the temperature gradient can be simultaneously realized in our system. We further find that it is possible to use the temperature differences between four leads to tune the spin Seebeck coefficients.
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We theoretically investigate the spin-dependent Seebeck effect in an Aharonov-Bohm mesoscopic ring in the presence of both Rashba and Dresselhaus spin-orbit interactions under magnetic flux perpendicular to the ring. We apply the Greens function method to calculate the spin Seebeck coefficient employing the tight-binding Hamiltonian. It is found that the spin Seebeck coefficient is proportional to the slope of the energy-dependent transmission coefficients. We study the strong dependence of spin Seebeck coefficient on the Fermi energy, magnetic flux, strength of spin-orbit coupling, and temperature. Maximum spin Seebeck coefficients can be obtained when the strengths of Rashba and Dresselhaus spin-orbit couplings are slightly different. The spin Seebeck coefficient can be reduced by increasing temperature and disorder.
We study the effect of anisotropy of the Rashba coupling on the extrinsic spin Hall effect due to spin-orbit active adatoms on graphene. In addition to the intrinsic spin-orbit coupling, a generalized anisotropic Rashba coupling arising from the breakdown of both mirror and hexagonal symmetries of pristine graphene is considered. We find that Rashba anisotropy can strongly modify the dependence of the spin Hall angle on carrier concentration. Our model provides a simple and general description of the skew scattering mechanism due to the spin-orbit coupling that is induced by proximity to large adatom clusters.
The Rashba spin-orbit coupling arising from structure inversion asymmetry couples spin and momentum degrees of freedom providing a suitable (and very intensively investigated) environment for spintronic effects and devices. Here we show that in the presence of strong disorder, non-homogeneity in the spin-orbit coupling gives rise to a finite spin Hall conductivity in contrast with the corresponding case of a homogeneous linear spin-orbit coupling. In particular, we examine the inhomogeneity arising from a striped structure for a two-dimensional electron gas, affecting both density and Rashba spin-orbit coupling. We suggest that this situation can be realized at oxide interfaces with periodic top gating.
In 1984, Bychkov and Rashba introduced a simple form of spin-orbit coupling to explain certain peculiarities in the electron spin resonance of two-dimensional semiconductors. Over the past thirty years, similar ideas have been leading to a vast number of predictions, discoveries, and innovative concepts far beyond semiconductors. The past decade has been particularly creative with the realizations of means to manipulate spin orientation by moving electrons in space, controlling electron trajectories using spin as a steering wheel, and with the discovery of new topological classes of materials. These developments reinvigorated the interest of physicists and materials scientists in the development of inversion asymmetric structures ranging from layered graphene-like materials to cold atoms. This review presents the most remarkable recent and ongoing realizations of Rashba physics in condensed matter and beyond.
We use $vec{k}cdotvec{p}$ theory to estimate the Rashba spin-orbit coupling (SOC) in large semiconductor nanowires. We specifically investigate GaAs- and InSb-based devices with different gate configurations to control symmetry and localization of the electron charge density. We explore gate-controlled SOC for wires of different size and doping, and we show that in high carrier density SOC has a non-linear electric field susceptibility, due to large reshaping of the quantum states. We analyze recent experiments with InSb nanowires in light of our calculations. Good agreement is found with SOC coefficients reported in Phys. Rev.B 91, 201413(R) (2015), but not with the much larger values reported in Nat Commun., 8, 478 (2017). We discuss possible origins of this discrepancy.
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