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Register a new userQuantifying and controlling the magnetic dipole contribution to 1.5 $mu$m light emission in erbium-doped yttrium oxide
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We experimentally quantify the contribution of magnetic dipole (MD) transitions to the near-infrared light emission from trivalent erbium-doped yttrium oxide (Er$^{3+}$:Y$_2$O$_3$). Using energy-momentum spectroscopy, we demonstrate that the $^4$I$_{13/2}{to}^4$I$_{15/2}$ emission near 1.5 $mu$m originates from nearly equal contributions of electric dipole (ED) and MD transitions that exhibit distinct emission spectra. We then show how these distinct spectra, together with the differing local density of optical states (LDOS) for ED and MD transitions, can be leveraged to control Er$^{3+}$ emission in structured environments. We demonstrate that far-field emission spectra can be tuned to resemble almost pure emission from either ED or MD transitions, and show that the observed spectral modifications can be accurately predicted from the measured ED and MD intrinsic emission rates.
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Silicon-based light sources including light-emitting diodes (LEDs) and laser diodes (LDs) for information transmission are urgently needed for developing monolithic integrated silicon photonics. Silicon doped by ion implantation with erbium ions (Er$^{3+}$) is considered a promising approach, but suffers from an extremely low quantum efficiency. Here we report an electrically pumped superlinear emission at 1.54 $mu$m from Er/O-doped silicon planar LEDs, which are produced by applying a new deep cooling process. Stimulated emission at room temperature is realized with a low threshold current of ~6 mA (~0.8 A/cm2). Time-resolved photoluminescence and photocurrent results disclose the complex carrier transfer dynamics from the silicon to Er3+ by relaxing electrons from the indirect conduction band of the silicon. This picture differs from the frequently-assumed energy transfer by electron-hole pair recombination of the silicon host. Moreover, the amplified emission from the LEDs is likely due to a quasi-continuous Er/O-related donor band created by the deep cooling technique. This work paves a way for fabricating superluminescent diodes or efficient LDs at communication wavelengths based on rare-earth doped silicon.
We report on transferring 1E-16-level fractional frequency stability of a master laser operated at 1.5 {mu}m to a slave laser operated at 698 nm, using a femtosecond fiber comb as transfer oscillator. With the 698 nm laser, the 1S_0 - 3P_0 clock transition of 87Sr was resolved to a Fourier-limited line width of 1.5 Hz (before: 10 Hz). Potential noise sources contributed by the frequency comb are discussed in detail.
Enhancing the light-matter interaction in two-dimensional (2D) materials with high-$Q$ resonances in photonic structures has boosted the development of optical and photonic devices. Herein, we intend to build a bridge between the radiation engineering and the bound states in the continuum (BIC), and present a general method to control light absorption at critical coupling through the quasi-BIC resonance. In a single-mode two-port system composed of graphene coupled with silicon nanodisk metasurfaces, the maximum absorption of 0.5 can be achieved when the radiation rate of the magnetic dipole resonance equals to the dissipate loss rate of graphene. Furthermore, the absorption bandwidth can be adjusted more than two orders of magnitude from 0.9 nm to 94 nm by simultaneously changing the asymmetric parameter of metasurfaces, the Fermi level and the layer number of graphene. This work reveals out the essential role of BIC in radiation engineering and provides promising strategies in controlling light absorption of 2D materials for the next-generation optical and photonic devices, e.g., light emitters, detectors, modulators, and sensors.
Lithium niobate on insulator (LNOI), regarded as an important candidate platform for optical integration due to its excellent nonlinear, electro-optic and other physical properties, has become a research hotspot. Light source, as an essential component for integrated optical system, is urgently needed. In this paper, we reported the realization of 1550-nm band on-chip LNOI microlasers based on erbium-doped LNOI ring cavities with loaded quality factors higher than one million, which were fabricated by using electron beam lithography and inductively coupled plasma reactive ion etching processes. These microlasers demonstrated a low pump threshold of ~20 {mu}W and stable performance under the pump of a 980-nm band continuous laser. Comb-like laser spectra spanning from 1510 nm to 1580 nm were observed in high pump power regime, which lays the foundation of the realization of pulsed laser and frequency combs on rare-earth ion doped LNOI platform. This work has effectively promoted the development of on-chip integrated active LNOI devices.
Lithium niobate on insulator (LNOI), as an emerging and promising optical integration platform, faces shortages of on-chip active devices including lasers and amplifiers. Here, we report the fabrication on-chip erbium-doped LNOI waveguide amplifiers based on electron beam lithography and inductively coupled plasma reactive ion etching. A net internal gain of ~30 dB/cm in communication band was achieved in the fabricated waveguide amplifiers under the pump of a 974-nm continuous laser. This work develops new active devices on LNOI and will promote the development of LNOI integrated photonics.
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