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Register a new userSpectroscopy of the D1-transition of cesium by dressed-state resonance fluorescence from a single (In,Ga)As/GaAs quantum dot
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We use a laser-driven single (In,Ga)As quantum dot (QD) in the dressed state regime of resonance fluorescence ($T = 4$ K) to observe the four $D_1$-transition lines of alkali atomic cesium ($Cs$) vapor at room temperature. We tune the frequency of the dressing continuous-wave laser in the vicinity of the bare QD resonance $sim 335.116$ THz ($sim 894.592$ nm) at constant excitation power and thereby controllably tune the center and side channel frequencies of the probe light, i.e. the Mollow triplet. Resonances between individual QD Mollow triplet lines and the atomic hyperfine-split transitions are clearly identified in the $Cs$ absorption spectrum. Our results show that narrow-band (In,Ga)As QD resonance fluorescence (RF) is suitable to optically address individual transitions of the $D_1$ quadruplet without applying magnetic field or electric field tuning.
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We report the first experimental demonstration of interference-induced spectral line elimination predicted by Zhu and Scully [Phys. Rev. Lett. 76, 388 (1996)] and Ficek and Rudolph [Phys. Rev. A 60, 4245 (1999)]. We drive an exciton transition of a self-assembled quantum dot in order to realize a two-level system exposed to bichromatic laser field and observe nearly complete elimination of the resonance fluorescence spectral line at the driving laser frequency. This is caused by quantum interference between coupled transitions among the doubly dressed excitonic states, without population trapping. We also demonstrate multiphoton ac Stark effect with shifted subharmonic resonances and dynamical modifications of resonance fluorescence spectra by using double dressing.
We present the theory of resonance fluorescence from an asymmetric quantum dot driven by a two-component electromagnetic field with two different frequencies, polarizations and amplitudes (bichromatic field) in the regime of strong light-matter coupling. It follows from the elaborated theory that the broken inversion symmetry of the driven quantum system and the bichromatic structure of the driving field result in unexpected features of the resonance fluorescence, including the infinite set of Mollow triplets, the quench of fluorescence peaks induced by the dressing field, and the oscillating behavior of the fluorescence intensity as a function of the dressing field amplitude. These quantum phenomena are of general physical nature and, therefore, can take place in various double-driven quantum systems with broken inversion symmetry.
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We report a new way to slow down the spontaneous emission rate of excitons in the wetting layer (WL) through radiative field coupling between the exciton emissions and the dipole field of metal islands. As a result, a long-lifetime decay process is detected in the emission of InAs/GaAs single quantum dots (QDs). It is found that when the separation distance from WL layer (QD layer) to the metal islands is around 20 nm and the islands have an average size of approximately 50 nm, QD lifetime may change from approximately 1 to 160 ns. The corresponding second-order autocorrelation function g(2) ({tau}) changes from antibunching into a bunching and antibunching characteristics due to the existence of long-lived metastable states in the WL. This phenomenon can be understood by treating the metal islands as many dipole oscillators in the dipole approximation, which may cause destructive interference between the exciton dipole field and the induced dipole field of metal islands.
Resonant excitation of solid state quantum emitters has the potential to deterministically excite a localized exciton while ensuring a maximally coherent emission. In this work, we demonstrate the coherent coupling of an exciton localized in a lithographically positioned, site-controlled semiconductor quantum dot to an external resonant laser field. For strong continuous-wave driving we observe the characteristic Mollow triplet and analyze the Rabi splitting and sideband widths as a function of driving strength and temperature. The sideband widths increase linearly with temperature and the square of the driving strength, which we explain via coupling of the exciton to longitudinal acoustic phonons. We also find an increase of the Rabi splitting with temperature, which indicates a temperature induced delocalization of the excitonic wave function resulting in an increase of the oscillator strength. Finally, we demonstrate coherent control of the exciton excited state population via pulsed resonant excitation and observe a damping of the Rabi oscillations with increasing pulse area, which is consistent with our exciton-photon coupling model. We believe that our work outlines the possibility to implement fully scalable platforms of solid state quantum emitters. The latter is one of the key prerequisites for more advanced, integrated nanophotonic quantum circuits.
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