Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userStatistics of dislocation pinning at localized obstacles
417
0
0.0
(
0
)
Added by
Mishreyee Bhattacharya
Publication date
2014
fields
Physics
and research's language is
English
Ask ChatGPT about the research
No Arabic abstract
Pinning of dislocations at nanosized obstacles like precipitates, voids and bubbles, is a crucial mechanism in the context of phenomena like hardening and creep. The interaction between such an obstacle and a dislocation is often explored at fundamental level by means of analytical tools, atomistic simulations and finite element methods. Nevertheless, the information extracted from such studies has not been utilized to its maximum extent on account of insufficient information about the underlying statistics of this process comprising a large number of dislocations and obstacles in a system. Here we propose a new statistical approach, where the statistics of pinning of dislocations by idealized spherical obstacles is explored by taking into account the generalized size-distribution of the obstacles along with the dislocation density within a three-dimensional framework. The application of this approach, in combination with the knowledge of fundamental dislocation-obstacle interactions, has successfully been demonstrated for dislocation pinning at nanovoids in neutron irradiated type 316-stainless steel in regard to both conservative and non-conservative motions of dislocations.
rate research
Read More
The current interest in compositionally complex alloys including so called high entropy alloys has caused renewed interest in the general problem of solute hardening. It has been suggested that this problem can be addressed by treating the alloy as an effective medium containing a random distribution of dilatation and compression centers representing the volumetric misfit of atoms of different species. The mean square stresses arising from such a random distribution can be calculated analytically, their spatial correlations are strongly anisotropic and exhibit long-range tails with third-order power law decay. Here we discuss implications of the anisotropic and long-range nature of the correlation functions for the pinning of dislocations of arbitrary orientation. While edge dislocations are found to follow the standard pinning paradigm, for dislocations of near screw orientation we demonstrate the co-existence of two types of pinning energy minima.
In this letter we propose a model that demonstrates the effect of free surface on the lattice resistance experienced by a moving dislocation in nanodimensional systems. This effect manifests in an enhanced velocity of dislocation due to the proximity of the dislocation line to the surface. To verify this finding, molecular dynamics simulations for an edge dislocation in bcc molybdenum are performed and the results are found to be in agreement with the numerical implementations of this model. The reduction in this effect at higher stresses and temperatures, as revealed by the simulations, confirms the role of lattice resistance behind the observed change in the dislocation velocity.
Solute segregation at twin boundaries in Mg has been widely investigated, yet this phenomenon has not been studied at the equally important basal-prismatic interfaces. To fill this critical gap, this work investigates the segregation behavior of Y at basal-prismatic interfaces with various structures using atomistic simulations. The calculated interfacial energies show that short coherent interfaces and long semi-coherent interfaces containing disconnections and dislocations are more energetically stable than disordered interfaces, which is supported by our experimental observations. The segregation energy of Y at these lowest energy basal-prismatic interfaces shows a clear correlation with the atomic hydrostatic stress, highlighting the importance of local compressive stresses for segregation. In addition, sites around dislocations at the semi-coherent basal-prismatic interfaces demonstrate lower segregation energy, indicating that local defects such as interfacial dislocations can further enhance the segregation. In its entirety, this study indicates that the segregation of solutes can be affected by a number of different aspects of the local structure at complex interfaces in Mg alloys.
We employ the methods of atomistic simulation to investigate the climb of edge dislocation at nanovoids by analyzing the energetics of the underlying mechanism. A novel simulation strategy has been demonstrated to estimate the release of surface energy of the nanovoid during the void induced climb. The curvature of the pinned dislocation segment is found to play a key role in mediating this unique mechanism of dislocation climb. Our study reveals that the kinetics of void-induced climb process is fundamentally distinct from the conventional diffusion-mediated climb.
Tensile tests were carried out by deforming polycrystalline samples of substitutional Al-2.5%Mg alloy at room temperature for a range of strain rates. The Portevin-Le Chatelier (PLC) effect was observed throughout the strain rate regime. The deformation bands in this region are found to be of type A in nature. From the analysis of the experimental stress time series data we could infer that the dynamics of type A dislocation band propagation is a Markov process.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
