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Register a new userResolution of Discrete Excited States in InGaN Multiple Quantum Wells using Degenerate Four Wave Mixing
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We report on two pulse, degenerate four wave mixing (DFWM) measurements on shallow InGaN/GaN multi-quantum wells (MQWs) grown on sapphire substrates. These reveal pulse length limited signal decays. We have found a 10:1 resonant enhancement of the DFWM signal at the excitonic transition frequencies which thereby give a sharp discrimination of the discrete excitonic contributions within the featureless distribution seen in absorption spectra. The exciton resonances have peak positions, which yield good overall agreement with a full k.P model calculation for the quantum well energy levels and optical transition matrix elements. InGaN/GaN MQWs generally exhibit strongly inhomogeneously broadened excitation spectra due to indium fluctuation effects; this approach therefore affords a practical method to extract information on the excited excitonic states not available previously
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The unique linear and massless band structure of graphene, in a purely two-dimensional Dirac fermionic structure, have led to intense research spanning from condensed matter physics to nanoscale device applications covering the electrical, thermal, mechanical and optical domains. Here we report three consecutive first-observations in graphene-silicon hybrid optoelectronic devices: (1) ultralow power resonant optical bistability; (2) self-induced regenerative oscillations; and (3) coherent four-wave mixing, all at a few femtojoule cavity recirculating energies. These observations, in comparison with control measurements with solely monolithic silicon cavities, are enabled only by the dramatically-large and chi(3) nonlinearities in graphene and the large Q/V ratios in wavelength-localized photonic crystal cavities. These results demonstrate the feasibility and versatility of hybrid two-dimensional graphene-silicon nanophotonic devices for next-generation chip-scale ultrafast optical communications, radio-frequency optoelectronics, and all-optical signal processing.
We have mesured the carrier recombination dynamics in InGaN/GaN multiple quantum wells over an unprecedented range in intensity. We find that at times shorter than 30,ns, they follow an exponential form, and a power law at times longer than 1,$mu$s. To explain these biphasic dynamics, we propose a simple three-level model where a charge-separated state interplays with the radiative state through charge transfer following a tunneling mechanism. We show how the distribution of distances in charge-separated states controls the dynamics at long time. Our results imply that charge recombination happens on nearly-isolated clusters of localization centers.
Based on a microscopic many-particle theory, we predict large optical gain in the probe and background-free four-wave mixing directions caused by excitonic instabilities in semiconductor quantum wells. For a single quantum well with radiative-decay limited dephasing in a typical pump-probe setup we discuss the microscopic driving mechanisms and polarization and frequency dependence of these instabilities.
Single photon-level quantum frequency conversion has recently been demonstrated using silicon nitride microring resonators. The resonance enhancement offered by such systems enables high-efficiency translation of quantum states of light across wide frequency ranges at sub-watt pump powers. Using a quantum-mechanical Hamiltonian formalism, we present a detailed theoretical analysis of the conversion dynamics in these systems, and show that they are capable of converting single- and multi-photon quantum states. Analytic formulas for the conversion efficiency, spectral conversion probability density, and pump power requirements are derived which are in good agreement with previous theoretical and experimental results. We show that with only modest improvement to the state of the art, efficiencies exceeding 95% are achievable using less than 100 mW of pump power. At the critical driving strength that yields maximum conversion efficiency, the spectral conversion probability density is shown to exhibit a flat-topped peak, indicating a range of insensitivity to the spectrum of a single photon input. Two alternate theoretical approaches are presented to study the conversion dynamics: a dressed mode approach that yields a better intuitive picture of the conversion process, and a study of the temporal dynamics of the participating modes in the resonator, which uncovers a regime of Rabi-like coherent oscillations of single photons between two different frequency modes. This oscillatory regime arises from the strong coupling of distinct frequency modes mediated by coherent pumps.
We suggest a scheme to manipulate paraxial diffraction by utilizing the dependency of a four-wave mixing process on the relative angle between the light fields. A microscopic model for four-wave mixing in a Lambda-type level structure is introduced and compared to recent experimental data. We show that images with feature size as low as 10 micrometers can propagate with very little or even negative diffraction. The mechanism is completely different from that conserving the shape of spatial solitons in nonlinear media, as here diffraction is suppressed for arbitrary spatial profiles. At the same time, the gain inherent to the nonlinear process prevents loss and allows for operating at high optical depths. Our scheme does not rely on atomic motion and is thus applicable to both gaseous and solid media.
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