Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userAliovalent Doping of CeO$_2$: DFT-study of Oxidation State and Vacancy Effects
151
0
0.0
(
0
)
Added by
Danny E. P. Vanpoucke Dr.
Publication date
2013
fields
Physics
and research's language is
English
Ask ChatGPT about the research
No Arabic abstract
The modification of the properties of CeO$_2$ through aliovalent doping are investigated within the emph{ab-initio} density functional theory framework. Lattice parameters, dopant atomic radii, bulk moduli and thermal expansion coefficients of fluorite type Ce$_{1-x}$M$_{x}$O$_{2-y}$ (with M$ = $ Mg, V, Co, Cu, Zn, Nb, Ba, La, Sm, Gd, Yb, and Bi)are presented for dopant concentrations in the range $0.00 leq x leq 0.25$. The stability of the dopants is compared and discussed, and the influence of oxygen vacancies is investigated. It is shown that oxygen vacancies tend to increase the lattice parameter, and strongly decrease the bulk modulus. Defect formation energies are correlated with calculated crystal radii and covalent radii of the dopants, but are shown to present no simple trend. The previously observed inverse relation between the thermal expansion coefficient and the bulk modulus is shown to persist independent of the inclusion of charge compensating vacancies.
rate research
Read More
Fluorite CeO$_2$ doped with group IV elements is studied within the DFT and DFT+U framework. Concentration dependent formation energies are calculated for Ce$_{1-x}$Z$_x$O$_2$ (Z= C, Si, Ge, Sn, Pb, Ti, Zr, Hf) with $0leq x leq 0.25$ and a roughly decreasing trend with ionic radius is observed. The influence of the valence and near valence electronic configuration is discussed, indicating the importance of filled $d$ and $f$ shells near the Fermi level for all properties investigated. A clearly different behavior of group IVa and IVb dopants is observed: the former are more suitable for surface modifications, the latter are more suitable for bulk modifications. indent For the entire set of group IV dopants, there exists an inverse relation between the change, due to doping, of the bulk modulus and the thermal expansion coefficients. Hirshfeld-I atomic charges show that charge transfer effects due to doping are limited to the nearest neighbor oxygen atoms.
The appearance of microcracks in CeO$_2$ buffer layers, as used in buffer layer architectures for coated superconductors, indicates the presence of stress between this buffer layer and the substrate. This stress can originate from the differences in thermal expansion or differences in lattice parameters between the CeO$_2$ buffer layer and the substrate. In this article, we study, by means of textit{ab initio} density functional theory calculations, the influence of group IV doping elements on the lattice parameter and bulk modulus of CeO$_2$. Vegards law behavior is found for the lattice parameter in systems without oxygen vacancies, and the Shannon crystal radii for the doping elements are retrieved from the lattice expansions. We show that the lattice parameter of the doped CeO$_2$ can be matched to that of the La$_2$Zr$_2$O$_7$ coated NiW substrate substrate for dopant concentrations of about $5%$, and that bulk modulus matching is either not possible or would require extreme doping concentrations.
It has been demonstrated in previous experimental and computational work that doping CeO2 with transition metals is an effective way of tuning its properties. However, each previous study on CeO2 doping has been limited to a single or a few dopants. In this paper, we systematically study the formation energies, structural stability and electronic properties of CeO2 doped with the entire range of the ten 3d transition metals using density functional theory (DFT) calculations at the hybrid level. The formation energies of oxygen vacancies, and their effects on electronic properties, were also considered. It is found that most of the 3d transition metal dopants can lower the band gap of CeO2, with V and Co doping significantly reducing the band gap to less than 2.0 eV. Furthermore, all of the dopants can lower the formation energy of oxygen vacancies, and those with higher atomic numbers, particularly Cu and Zn, are most effective for this purpose. The electronic structures of doped CeO2 compensated by oxygen vacancies show that the presence of oxygen vacancies can further lower the band gap for most of the dopants, with V-, Cr-, Fe-, Co-, Ni-, and Cu-doped CeO2 all having band gaps of less than 2.0 eV. These results suggest that doping CeO2 with 3d transition metals could enhance the photocatalytic performance under visible light and increase the oxygen vacancy concentration, and they could provide a meaningful guide for the design of CeO2-based materials with improved photocatalytic and catalytic performance as well as enhanced ionic conductivity.
The crystal structure of Lanthanum Cerium Oxide (La$_2$Ce$_2$O$_7$) is investigated using textit{ab initio} density functional theory (DFT) calculations. The relative stability of fluorite- and pyrochlore-like structures is studied through comparison of their formation energies. These formation energies show the pyrochlore structure to be favored over the fluorite structure, apparently contradicting the conclusions based on experimental neutron and X-ray diffraction (XRD). By calculating and comparing XRD spectra for a set of differently ordered and random structures, we show that the pyrochlore structure is consistent with diffraction experiments. For these reasons, we suggest the pyrochlore structure as the ground state crystal structure for La$_2$Ce$_2$O$_7$. %we show that among the structures considered in this work, the pyrochlore geometry is clearly favorable over the disordered fluorite geometry.
Recently, an experimental study developed an efficient way to obtain sulfur-doped gamma-graphdiyne. This study has shown that this new material could have promising applications in lithium-ion batteries, but the complete understanding of how the sulfur atoms are incorporated into the graphdiyne network is still missing. In this work, we have investigated the sulfur doping process through molecular dynamics and density functional theory simulations. Our results suggest that the doped induced distortions of the gamma-graphdiyne pores prevent the incorporation of more than two sulfur atoms. The most common configuration is the incorporation of just one sulfur atom per the graphdiyne pore.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
