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Register a new userExamination of the tradeoff between intrinsic and extrinsic properties in the optimization of a modern internal tin Nb3Sn conductor
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In modern Nb3Sn wires there is a fundamental compromise to be made between optimizing the intrinsic properties associated with the superfluid density in the A15 phase (e.g. Tc, Hc, Hc2, all of which are composition dependent), maximizing the quantity of A15 that can be formed from a given mixture of Nb, Sn and Cu, minimizing the A15 composition gradients within each sub-element, while at the same time generating a high vortex pinning critical current density, Jc, by maximizing the grain boundary density with the additional constraint of maintaining the RRR of the Cu stabilizer above 100. Here we study these factors in a Ta-alloyed Restacked-Rod-Process (RRP) wire with ~70 microns diameter sub-elements. Consistent with many earlier studies, maximum non-Cu Jc(12T,4.2K) requires preventing A15 grain growth, rather than by optimizing the superfluid density. In wires optimized for 12T, 4.2K performance, about 60% of the non-Cu cross-section is A15, 35% residual Cu and Sn core, and only 5% a residual Nb7.5wt.%Ta diffusion barrier. The specific heat and chemical analyses show that in this 60% A15 fraction there is a wide range of Tc and chemical composition that does diminish for higher heat treatment temperatures, which, however, are impractical because of the strong RRR degradation that occurs when only about 2% of the A15 reaction front breaches the diffusion barrier. As this kind of Nb3Sn conductor design is being developed for sub-elements 1/2 the present size, it is clear that better barriers are essential to allowing higher temperature reactions with better intrinsic A15 properties. We present here multiple and detailed intrinsic and extrinsic evaluations because we believe that only such broad and quantitative descriptions are capable of accurately tracking the limitations of individual conductor designs where optimization will always be a compromise between inherently conflicting goals
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In powder-in-tube (PIT) Nb3Sn composites, the A15 phase forms between a central tin-rich core and a coaxial Nb tube, thus causing the tin content and superconducting properties to vary with radius across the A15 layer. Since this geometry is also ideal for magnetic characterization of the superconducting properties with the field parallel to the tube axis, a system of concentric shells with varying tin content was used to simulate the superconducting properties, the overall severity of the Sn composition gradient being defined by an index N. Using well-known scaling relationships and property trends developed in an earlier experimental study, the critical current density for each shell was calculated, and from this the magnetic moment of each shell was found. By summing these moments, experimentally measured properties such as pinning-force curves and Kramer plots could be simulated. We found that different tin profiles have only a minor effect on the shape of Kramer plots, but a pronounced effect on the irreversibility fields defined by the extrapolation of Kramer plots. In fact, these extrapolated values H_K are very close to a weighted average of the superconducting properties across the layer for all N. The difference between H_K and the upper critical field commonly seen in experiments is a direct consequence of the different ways measurements probe the simulated Sn gradients. Sn gradients were found to be significantly deleterious to the critical current density Jc, since reductions to both the elementary pinning force and the flux pinning scaling field H_K compound the reduction in Jc. The simulations show that significant gains in Jc of Nb3Sn strands might be realized by circumventing strong compositional gradients of tin.
We report the first experimental observation of the quenching of the superconducting state in current-voltage characteristics of an iron-based superconductor, namely, in FeSeTe thin films. Based on available theoretical models, our analysis suggests the presence of an intrinsic flux-flow electronic instability along with non-negligible extrinsic thermal effects. The coexistence and competition of these two mechanisms classify the observed instability as halfway between those of low-temperature and of high-temperature superconductors, where thermal effects are respectively largely negligible or predominant.
Recently, the measurement of the polar Kerr effect (PKE) in the quasi two-dimensional superconductor Sr2RuO4, which is motivated to observe the chirality of px + i py-wave pairing, has been reported. We clarify that the PKE has intrinsic and extrinsic (disorder-induced) origins. The extrinsic contribution would be dominant in the PKE experiment.
We investigate experimentally the electric transport at the insulating side of the superconductor to insulator transition in thin TiN-films. At temperatures T > 50 mK we observe an Arrhenius-type conductance, with an activation energy depending logarithmically on the sample size. At high bias the current voltage (I-V) characteristics display a large current jump into an electron heating dominated regime. For the largest samples, and below 50 mK we observe a low-bias power law I ~ V^alpha characteristics with an exponent alpha > 1 rapidly growing with decreasing temperature, which is expected for a binding-unbinding crossover of the charge-Berezinskii-Kosterlitz-Thouless type.
We investigate an excitonic peak appearing in low-temperature photoluminescence of monolayer transition metal dichalcogenides (TMDCs), which is commonly associated with defects and disorder. First, to uncover the intrinsic origin of defect-related excitons, we study their dependence on gate voltage, excitation power, and temperature in a prototypical TMDC monolayer, $MoS_2$. We show that the entire range of behaviors of defect-related excitons can be understood in terms of a simple model, where neutral excitons are bound to ionized donor levels, likely related to sulphur vacancies, with a density of $7cdot10^{11} cm^{-2}$. Second, to study the extrinsic origin of defect-related excitons, we controllably deposit oxygen molecules in-situ onto the surface of $MoS_2$ kept at cryogenic temperature. We find that in addition to trivial p-doping of $3cdot10^{12} cm^{-2}$, oxygen affects the formation of defect-related excitons by functionalizing the vacancy. Combined, our results uncover the origin of defect-related excitons, suggest a simple and conclusive approach to track the functionalization of TMDCs, benchmark device quality, and pave the way towards exciton engineering in hybrid organic-inorganic TMDC devices.
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