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Mechanism of formation and peculiarities of structure of bulk MgB2 compound specimens

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 Added by Yulia Blinova
 Publication date 2013
  fields Physics
and research's language is English




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The existence of two phases within one and the same hexagonal lattice of MgB2 compound, differing in Mg and B (in the homogeneity region) and especially in impurity oxygen content, as well as in microstructure, is demonstrated by various techniques. The regions corresponding to these two phases of MgB2 have the sizes of 100-500 {mu}m, and they fill the whole bulk of specimens, alternating with each other. It is suggested that the two-phase state of MgB2 compound is caused by specific features of its formation mechanism (as a result of synthesis at 800-1000{deg}C), including the stages of Mg melting, dissolution of solid boron in it up to the composition of MgB2 and further crystallization of the MgB2 compound from the melt with the formation of dendrite-like structure with corresponding redistribution of main components and impurities.



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The growth mechanisms of MgB2 films obtained by different methods on various substrates are compared via a detailed cross-sectional scanning electron microscopy (SEM) study. The analyzed films include (a) samples obtained by an ex-situ post-anneal at 900 degree of e-beam evaporated boron in the presence of an Mg vapor (exhibiting bulk-like Tc0 about 38.8 K), (b) samples obtained by the same ex-situ 900 degree anneal of pulsed laser deposition (PLD)-grown Mg+B precursors (exhibiting Tc0 ~ 25 K), and (c) films obtained by a low-temperature (600 - 630 degree) in-situ anneal of PLD-grown Mg+B precursors (with Tc0 about 24 K). A significant oxygen contamination was also present in films obtained from a PLD-grown precursors. On the other hand, it is clearly observed that the films obtained by the high-temperature reaction of e-beam evaporated B with Mg vapor are formed by the nucleation of independent MgB2 grains at the film surface, indicating that this approach may not be suitable to obtain smooth and (possibly) epitaxial films.
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346 - S.Lee , T.Masui , H.Mori 2002
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