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Register a new userFlow and Tilt-Induced Orientation of the Moving Vortex Lattice in Amorphous NbGe Superconducting Thin Films
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The orientation and deformation of moving vortex lattices in the flux-flow state have been investigated in amorphous superconducting NbGe thin films. Employing a mode-locking technique, we detect how moving lattices deform and their orientation changes as a magnetic field is tilted from normal to the film surface. For high tilt angles the lattice orientation is aligned parallely with the tilt direction. Meanwhile for low tilt angles the lattice orientation depends on the vortex velocity and a velocity-induced reorientation occurs. The characteristic velocity for the reorientation varies remarkably as the moving lattices deform. The observed features are consistent with an extended bond-fluctuation theory, revealing that the anisotropic shaking vortex motion is essential for determining the orientation of moving vortex lattices.
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Vortex dynamics in superconductors have received a great deal of attention from both fundamental and applied researchers over the past few decades. Because of its critical role in the energy relaxation process of type-II superconductors, vortex dynamics have been deemed a key contributor to the response rate of the emerging superconducting single photon detector (SSPD). With the support of electrical transport measurements under external magnetic fields, vortex dynamics in superconducting a-MoSi thin films are investigated in this work. It is ascertained that the vortex state changes from pinned to flux flow under the influence of the Lorentz force. The critical vortex velocity v* and quasi-particle inelastic scattering time {tau}* under different magnetic fields are derived from the Larkin-Ovchinnikov model. Under high magnetic fields, the v* power law dependence (v*~B-1/2) collapses, i.e., v* tends to zero, which is attributed to the obstruction of flux flow by the intrinsic defects, while the {tau}* increases with the increasing magnetic field strength. In addition, the degree of vortex rearrangement is found to be enhanced by photon-induced reduction in potential barrier, which mitigates the adverse effect of film inhomogeneity on superconductivity in the a-MoSi thin films. The thorough understanding of the vortex dynamics in a-MoSi thin films under the effect of external stimuli is of paramount importance for both further fundamental research in this area and optimization of SSPD design.
We use a scanning nanometer-scale superconducting quantum interference device (SQUID) to image individual vortices in amorphous superconducting MoSi thin films. Spatially resolved measurements of the magnetic field generated by both vortices and Meissner screening satisfy the Pearl model for vortices in thin films and yield values for the Pearl length and bulk penetration depth at 4.2 K. Flux pinning is observed and quantified through measurements of vortex motion driven by both applied currents and thermal activation. The effects of pinning are also observed in metastable vortex configurations, which form as the applied magnetic field is reduced and magnetic flux is expelled from the film. Understanding and controlling vortex dynamics in amorphous thin films is crucial for optimizing devices such as superconducting nanowire single photon detectors (SNSPDs), the most efficient of which are made from MoSi, WSi, and MoGe.
We observed mode-locking (ML) of rf-dc driven vortex arrays in a superconducting weak pinning a-NbGe film. The ML voltage shows the expected scaling $Vpropto fsqrt{B}$ with $f$ the rf-frequency and $B$ the magnetic field. For large dc-velocity (corresponding to a large ML frequency), the ML current step width exhibits a squared Bessel function dependence on the rf-amplitude as predicted for ML of a lattice moving elastically through a random potential.
In 1976 Larkin and Ovchinnikov [Sov. Phys. JETP 41, 960 (1976)] predicted that vortex matter in superconductors driven by an electrical current can undergo an abrupt dynamic transition from a flux-flow regime to a more dissipative state at sufficiently high vortex velocities. Typically this transition manifests itself as a large voltage jump at a particular current density, so-called instability current density $J^*$, which is smaller than the depairing current. By tuning the effective pinning strength in Al films, using an artificial periodic pinning array of triangular holes, we show that a unique and well defined instability current density exists if the pinning is strong, whereas a series of multiple voltage transitions appear in the relatively weaker pinning regime. This behavior is consistent with time-dependent Ginzburg-Landau simulations, where the multiple-step transition can be unambiguously attributed to the progressive development of vortex chains and subsequently phase-slip lines. In addition, we explore experimentally the magnetic braking effects, caused by a thick Cu layer deposited on top of the superconductor, on the instabilities and the vortex ratchet effect
A Cooper pair insulator (CPI) phase emerges near the superconductor-insulator transitions of a number of strongly-disordered thin film systems. Much recent study has focused on a mechanism driving the underlying Cooper pair localization. We present data showing that a CPI phase develops in amorphous Pb$_{0.9}$Bi$_{0.1}$ films deposited onto nano-porous anodized aluminum oxide surfaces just as it has been shown to develop for a-Bi films. This result confirms the assertion that the CPI phase emerges due to the structure of the substrate. It supports the picture that nanoscale film thickness variations induced by the substrate drive the localization. Moreover, it implies that the CPI phase can be induced in any superconducting material that can be deposited onto this surface.
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