No Arabic abstract
The relativistic nature of charge carriers in graphene is expected to lead to an angle- dependent transmission through a potential barrier, where Klein tunneling involves annihilation of an electron and a hole at the edges of the barrier. The signatures of Klein tunneling have been observed in gated graphene devices, but the angle dependence of the transmission probability has not been directly observed. Here we show measurements of the angle-dependent transmission through quasi-ballistic graphene heterojunctions with straight and angled leads, in which the barrier height is controlled by a shared gate electrode. Using a balanced differential measurement technique, we isolate the angle-dependent contribution to the resistance from other angle-insensitive, gate-dependent and device-dependent effects. We find large oscillations in the transmission as a function of the barrier height in the case of Klein tunneling at a 45 deg angle, as compared to normal incidence. Our results are consistent with the model that predicts oscillations of the transmission probability due to interference of chiral carriers in a ballistic barrier. The observed angle dependence is the key element behind focusing of electrons and the realization of a Veselago lens in graphene.
The low energy physics of both graphene and surface states of three-dimensional topological insulators is described by gapless Dirac fermions with linear dispersion. In this work, we predict the emergence of a heavy Dirac fermion in a graphene/topological insulator hetero-junction, where the linear term almost vanishes and the corresponding energy dispersion becomes highly non-linear. By combining {it ab initio} calculations and an effective low-energy model, we show explicitly how strong hybridization between Dirac fermions in graphene and the surface states of topological insulators can reduce the Fermi velocity of Dirac fermions. Due to the negligible linear term, interaction effects will be greatly enhanced and can drive heavy Dirac fermion states into the half quantum Hall state with non-zero Hall conductance.
The relativistic nature of Dirac electrons and holes in graphene profoundly affects the way they interact with impurities. Signatures of the relativistic behavior have been observed recently in scanning tunneling measurements on individual impurities, but the conductance measurements in this regime are typically dominated by electron and hole puddles. Here we present measurements of quantum interference noise and magnetoresistance in graphene pn junctions. Unlike the conductance, the quantum interference noise can provide access to the scattering at the Dirac point:it is sensitive to the motion of a single impurity, it depends strongly on the fundamental symmetries that describe the system and it is determined by the phase-coherent phenomena which are not necessarily obscured by the puddles. The temperature and the carrier density dependence of resistance fluctuations and magnetoresistance in graphene p-n junctions at low temperatures suggest that the noise is dominated by the quantum interference due to scattering on impurities and that the noise minimum could be used to determine the point where the average carrier density is zero. At larger carrier densities, the amplitude of the noise depends strongly on the sign of the impurity charge, reflecting the fact that the electrons and the holes are scattered by the impurity potential in an asymmetric manner.
We have investigated a new feature of impurity cyclotron resonances common to various localized potentials of graphene. A localized potential can interact with a magnetic field in an unexpected way in graphene. It can lead to formation of anomalous boundstates that have a sharp peak with a width $R$ in the probability density inside the potential and a broad peak of size magnetic length $ell$ outside the potential. We investigate optical matrix elements of anomalous states, and find that they are unusually small and depend sensitively on magnetic field. The effect of many-body interactions on their optical conductivity is investigated using a self-consistent time-dependent Hartree-Fock approach (TDHFA). For a completely filled Landau level we find that an excited electron-hole pair, originating from the optical transition between two anomalous impurity states, is nearly uncorrelated with other electron-hole pairs, although it displays a substantial exchange self-energy effects. This absence of correlation is a consequence of a small vertex correction in comparison to the difference between renormalized transition energies computed within the one electron-hole pair approximation. However, an excited electron-hole pair originating from the optical transition between a normal and an anomalous impurity states can be substantially correlated with other electron-hole states with a significant optical strength.
We demonstrate the interaction between surface acoustic waves and Dirac electrons in monolayer graphene at low temperatures and high magnetic fields. A metallic interdigitated transducer launches surface waves that propagate through a conventional piezoelectric GaAs substrate and couple to large-scale monolayer CVD graphene films resting on its surface. Based on the induced acousto-electric current, we characterize the frequency domains of the transducer from its first to the third harmonic. We find an oscillatory attenuation of the SAW velocity depending on the conductivity of the graphene layer. The acousto-electric current reveals additional fine structure that is absent in pure magnetotransport. In addition we find a shift between the acousto-electric longitudinal voltage and the velocity change of the SAW. We attribute this shift to the periodic strain field from the propagating SAW that slightly modifies the Dirac cone.
We have studied quantum interference between electrons and holes in a split-ring gold interferometer with graphene arms, one of which contained a pn junction. The carrier type, the pn junction and the phase of the oscillations in a magnetic field were controlled by a top gate placed over one of the arms. We observe clear Aharonov-Bohm oscillations at the Dirac point and away from it, regardless of the carrier type in each arm. We also find clear oscillations when one arm of the interferometer contains a single pn junction, allowing us to study the interplay of Aharonov-Bohm effect and Klein tunneling.