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Register a new userEffective Hamiltonian for the hybrid double quantum dot qubit
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Quantum dot hybrid qubits formed from three electrons in double quantum dots represent a promising compromise between high speed and simple fabrication for solid state implementations of single qubit and two qubits quantum logic ports. We derive the Schrieffer-Wolff effective Hamiltonian that describes in a simple and intuitive way the qubit by combining a Hubbard-like model with a projector operator method. As a result, the Hubbard-like Hamiltonian is transformed in an equivalent expression in terms of the exchange coupling interactions between pairs of electrons. The effective Hamiltonian is exploited to derive the dynamical behaviour of the system and its eigenstates on the Bloch sphere to generate qubits operation for quantum logic ports. A realistic implementation in silicon and the coupling of the qubit with a detector are discussed.
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We report a single-shot-based projective readout of a semiconductor hybrid qubit formed by three electrons in a GaAs double quantum dot. Voltage-controlled adiabatic transitions between the qubit operations and readout conditions allow high-fidelity mapping of quantum states. We show that a large ratio both in relaxation time vs. tunneling time (~ 50) and singlet-triplet splitting vs. thermal energy (~ 20) allow energy-selective tunneling-based spin-to-charge conversion with readout visibility ~ 92.6%. Combined with ac driving, we demonstrate high visibility coherent Rabi and Ramsey oscillations of a hybrid qubit in GaAs. Further, we discuss the generality of the method for use in other materials, including silicon.
A scheme based on Coherent Tunneling by Adiabatic Passage (CTAP) of exchange-only spin qubit quantum states in a linearly arranged double quantum dot chain is demonstrated. Logical states for the qubit are defined by adopting the spin state of three electrons confined in a double quantum dot. The possibility to obtain gate operations entirely with electrical manipulations makes this qubit a valuable architecture in the field of quantum computing for the implementation of quantum algorithms. The effect of the external control parameters as well as the effect of the dephasing on the coherent tunneling in the chain is studied. During adiabatic transport, within a constant energy degenerate eigenspace, the states in the double quantum dots internal to the chain are not populated, while transient populations of the mixed states in the external ones are predicted.
Precise nanofabrication represents a critical challenge to developing semiconductor quantum-dot qubits for practical quantum computation. Here, we design and train a convolutional neural network to interpret in-line scanning electron micrographs and quantify qualitative features affecting device functionality. The high-throughput strategy is exemplified by optimizing a model lithographic process within a five-dimensional design space and by demonstrating a new approach to address lithographic proximity effects. The present results emphasize the benefits of machine learning for developing robust processes, shortening development cycles, and enforcing quality control during qubit fabrication.
Electron spins in Si are an attractive platform for quantum computation, backed with their scalability and fast, high-fidelity quantum logic gates. Despite the importance of two-dimensional integration with efficient connectivity between qubits for medium- to large-scale quantum computation, however, a practical device design that guarantees qubit addressability is yet to be seen. Here, we propose a practical 3 x 3 quantum dot device design and a larger-scale design as a longer-term target. The design goal is to realize qubit connectivity to the four nearest neighbors while ensuring addressability. We show that a 3 x 3 quantum dot array can execute four-qubit Grovers algorithm more efficiently than the one-dimensional counterpart. To scale up the two-dimensional array beyond 3 x 3, we propose a novel structure with ferromagnetic gate electrodes. Our results showcase the possibility of medium-sized quantum processors in Si with fast quantum logic gates and long coherence times.
We theoretically investigate electron spin operations driven by applied electric fields in a semiconductor double quantum dot (DQD). Our model describes a DQD formed in semiconductor nanowire with longitudinal potential modulated by local gating. The eigenstates for two electron occupation, including spin-orbit interaction, are calculated and then used to construct a model for the charge transport cycle in the DQD taking into account the spatial dependence and spin mixing of states. The dynamics of the system is simulated aiming at implementing protocols for qubit operations, that is, controlled transitions between the singlet and triplet states. In order to obtain fast spin manipulation, the dynamics is carried out taking advantage of the anticrossings of energy levels introduced by the spin-orbit and interdot couplings. The theory of optimal quantum control is invoked to find the specific electric-field driving that performs qubit logical operations. We demonstrate that it is possible to perform within high efficiency a universal set of quantum gates ${$CNOT, H$otimes$I, I$otimes$H, T$otimes$I, and T$otimes$I$}$, where H is the Hadamard gate, T is the $pi/8$ gate, and I is the identity, even in the presence of a fast charge transport cycle and charge noise effects.
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