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Register a new userOn the link between Octahedral Rotations and Conductivity in the Domain Walls of BiFeO3
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Gustau Catalan
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We analyze the hypothetical link between octahedral straightening and increased conductivity inside the domain walls of BiFeO3. Our calculations for 109 degree walls predict a lattice parameter expansion of c.a. 1 percent in the direction perpendicular to the wall, and an associated straightening of the octahedral rotation angle of 4 degrees, which is comparable to that observed in the high temperature metallic phase of BiFeO3. On the other hand, in the closely related family of rare-earth orthoferrites, straighter octahedra do not correlate with increased bandgap, which suggests that the correlation between octahedral straightening and bandgap reduction in BiFeO3 is perhaps fortuitous and not necessarily the cause of increased conductivity at the walls.
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The structure of ABO3 perovskites is dominated by two types of unstable modes, namely, the oxygen octahedral rotation (AFD) and ferroelectric (FE) mode. It is generally believed that such AFD and FE modes tend to compete and suppress each other. Here we use first-principles methods to show that a dual nature of the AFD-FE coupling, which turns from competitive to cooperative as the AFD mode strengthens, occurs in numerous perovskite oxides. We provide a unified model of such a dual interaction by introducing novel high-order coupling terms, and explain the atomistic origin of the resulting new form of ferroelectricity in terms of universal steric mechanisms. We also predict that such a novel form of ferroelectricity leads to atypical behaviors, such as an enhancement of the electric polarization under hydrostatic pressure.
We model short-period superlattices of WO$_3$ and ReO$_3$ with first-principles calculations. In fully-relaxed superlattices, we observe that octahedral tilts about an axis in the planes of the superlattices do not propagate from one material, despite the presence of the corner-shared oxygen atoms. However, we find that octahedral rotation is enhanced within WO$_3$ layers in cases in which strain couples with native antiferroelectric displacements of tungsten within their octahedral cages. Resulting structures remain antiferroelectric with low net global polarization. Thermodynamic analysis reveals that superlattices with sufficiently thick ReO$_3$ layers, the absolute number being three or more layers and the Re fraction $geq 50%$, tend to be more stable than the separated material phases and also show enhanced octahedral rotations in the WO$_3$ layers.
Local conduction at domains and domains walls is investigated in BiFeO3 thin films containing mostly 71o domain walls. Measurements at room temperature reveal conduction through 71o domain walls. Conduction through domains could also be observed at high enough temperatures. It is found that, despite the lower conductivity of the domains, both are governed by the same mechanisms: in the low voltage regime electrons trapped at defect states are temperature-activated but the current is limited by the ferroelectric surface charges; in the large voltage regime, Schottky emission takes place and the role of oxygen vacancies is that of selectively increasing the Fermi energy at the walls and locally reducing the Schottky barrier. This understanding provides the key to engineering conduction paths in oxides.
Epitaxial strain is a proven route to enhancing the properties of complex oxides, however, the details of how the atomic structure accommodates strain are poorly understood due to the difficulty of measuring the oxygen positions in thin films. We present a general methodology for determining the atomic structure of strained oxide films via x-ray diffraction, which we demonstrate using LaNiO3 films. The oxygen octahedral rotations and distortions have been quantified by comparing the intensities of half-order Bragg peaks, arising from the two unit cell periodicity of the octahedral rotations, with the calculated structure factor. Combining ab initio density functional calculations with these experimental results, we determine systematically how strain modifies the atomic structure of this functional oxide.
Nanoelectronic devices based on ferroelectric domain walls (DWs), such as memories, transistors, and rectifiers, have been demonstrated in recent years. Practical high-speed electronics, on the other hand, usually demand operation frequencies in the giga-Hertz (GHz) regime, where the effect of dipolar oscillation is important. In this work, an unexpected giant GHz conductivity on the order of 103 S/m is observed in certain BiFeO3 DWs, which is about 100,000 times greater than the carrier-induced dc conductivity of the same walls. Surprisingly, the nominal configuration of the DWs precludes the ac conduction under an excitation electric field perpendicular to the surface. Theoretical analysis shows that the inclined DWs are stressed asymmetrically near the film surface, whereas the vertical walls in a control sample are not. The resultant imbalanced polarization profile can then couple to the out-of-plane microwave fields and induce power dissipation, which is confirmed by the phase-field modeling. Since the contributions from mobile-carrier conduction and bound-charge oscillation to the ac conductivity are equivalent in a microwave circuit, the research on local structural dynamics may open a new avenue to implement DW nano-devices for RF applications.
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