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Register a new userSemiconducting Monolayer Materials as a Tunable Platform for Excitonic Solar Cells
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The recent advent of two-dimensional monolayer materials with tunable optoelectronic properties and high carrier mobility offers renewed opportunities for efficient, ultra-thin excitonic solar cells alternative to those based on conjugated polymer and small molecule donors. Using first-principles density functional theory and many-body calculations, we demonstrate that monolayers of hexagonal BN and graphene (CBN) combined with commonly used acceptors such as PCBM fullerene or semiconducting carbon nanotubes can provide excitonic solar cells with tunable absorber gap, donor-acceptor interface band alignment, and power conversion efficiency, as well as novel device architectures. For the case of CBN-PCBM devices, we predict the limit of power conversion efficiencies to be in the 10 - 20% range depending on the CBN monolayer structure. Our results demonstrate the possibility of using monolayer materials in tunable, efficient, polymer-free thin-film solar cells in which unexplored exciton and carrier transport regimes are at play.
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The interplay between topology and correlations can generate a variety of unusual quantum phases, many of which remain to be explored. Recent advances have identified monolayer WTe2 as a promising material for exploring such interplay in a highly tunable fashion. The ground state of this two-dimensional (2D) crystal can be electrostatically tuned from a quantum spin Hall insulator (QSHI) to a superconductor. However, much remains unknown about the nature of these ground states, including the gap-opening mechanism of the insulating state. Here we report systematic studies of the insulating phase in WTe2 monolayer and uncover evidence supporting that the QSHI is also an excitonic insulator (EI). An EI, arising from the spontaneous formation of electron-hole bound states (excitons), is a largely unexplored quantum phase to date, especially when it is topological. Our experiments on high-quality transport devices reveal the presence of an intrinsic insulating state at the charge neutrality point (CNP) in clean samples. The state exhibits both a strong sensitivity to the electric displacement field and a Hall anomaly that are consistent with the excitonic pairing. We further confirm the correlated nature of this charge-neutral insulator by tunneling spectroscopy. Our results support the existence of an EI phase in the clean limit and rule out alternative scenarios of a band insulator or a localized insulator. These observations lay the foundation for understanding a new class of correlated insulators with nontrivial topology and identify monolayer WTe2 as a promising candidate for exploring quantum phases of ground-state excitons.
Light-emitting diodes are of importance for lighting, displays, optical interconnects, logic and sensors. Hence the development of new systems that allow improvements in their efficiency, spectral properties, compactness and integrability could have significant ramifications. Monolayer transition metal dichalcogenides have recently emerged as interesting candidates for optoelectronic applications due to their unique optical properties. Electroluminescence has already been observed from monolayer MoS2 devices. However, the electroluminescence efficiency was low and the linewidth broad due both to the poor optical quality of MoS2 and to ineffective contacts. Here, we report electroluminescence from lateral p-n junctions in monolayer WSe2 induced electrostatically using a thin boron nitride support as a dielectric layer with multiple metal gates beneath. This structure allows effective injection of electrons and holes, and combined with the high optical quality of WSe2 it yields bright electroluminescence with 1000 times smaller injection current and 10 times smaller linewidth than in MoS2. Furthermore, by increasing the injection bias we can tune the electroluminescence between regimes of impurity-bound, charged, and neutral excitons. This system has the required ingredients for new kinds of optoelectronic devices such as spin- and valley-polarized light-emitting diodes, on-chip lasers, and two-dimensional electro-optic modulators.
We investigate Landau-quantized excitonic absorption and luminescence of monolayer WSe$_2$ under magnetic field. We observe gate-dependent quantum oscillations in the bright exciton and trions (or exciton-polarons) as well as the dark trions and their phonon replicas. Our results reveal spin- and valley-polarized Landau levels (LLs) with filling factors $n = +0, +1$ in the bottom conduction band and $n = -0$ to $-6$ in the top valence band, including the Berry-curvature-induced $n = pm0$ LLs of massive Dirac fermions. The LL filling produces periodic plateaus in the exciton energy shift accompanied by sharp oscillations in the exciton absorption width and magnitude. This peculiar exciton behavior can be simulated by semi-empirical calculations. The experimentally deduced g-factors of the conduction band (g ~ 2.5) and valence band (g ~ 15) exceed those predicted in a single-particle model (g = 1.5, 5.5, respectively). Such g-factor enhancement implies strong many-body interactions in gated monolayer WSe$_2$. The complex interplay between Landau quantization, excitonic effects, and many-body interactions makes monolayer WSe$_2$ a promising platform to explore novel correlated quantum phenomena.
Due to degeneracies arising from crystal symmetries, it is possible for electron states at band edges (valleys) to have additional spin-like quantum numbers. An important question is whether coherent manipulation can be performed on such valley pseudospins, analogous to that routinely implemented using true spin, in the quest for quantum technologies. Here we show for the first time that SU(2) valley coherence can indeed be generated and detected. Using monolayer semiconductor WSe2 devices, we first establish the circularly polarized optical selection rules for addressing individual valley excitons and trions. We then reveal coherence between valley excitons through the observation of linearly polarized luminescence, whose orientation always coincides with that of any linearly polarized excitation. Since excitons in a single valley emit circularly polarized photons, linear polarization can only be generated through recombination of an exciton in a coherent superposition of the two valleys. In contrast, the corresponding photoluminescence from trions is not linearly polarized, consistent with the expectation that the emitted photon polarization is entangled with valley pseudospin. The ability to address coherence, in addition to valley polarization, adds a critical dimension to the quantum manipulation of valley index necessary for coherent valleytronics.
The ingredients normally required to achieve topological superconductivity (TSC) are Cooper pairing, broken inversion symmetry, and broken time-reversal symmetry. We present a theoretical exploration of the possibility of using ultra-thin films of superconducting metals as a platform for TSC. Because they necessarily break inversion symmetry when prepared on a substrate and have intrinsic Cooper pairing, they can be TSCs when time-reversal symmetry is broken by an external magnetic field. Using microscopic density functional theory calculations we show that for ultrathin Pb and $beta$-Sn superconductors the position of the Fermi level can be tuned to quasi-2D band extrema energies using strain, and that the $g$-factors of these Bloch states can be extremely large enhancing the influence of external magnetic fields.
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