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Register a new userSuperlattice formed by quantum-dot sheets: density of states and IR absorption
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Low-energy continuous states of electron in heterosrtucture with periodically placed quantum-dot sheets are studied theoretically. The Greens function of electron is governed by the Dyson equation with the self-energy function which is determined the boundary conditions at quantum-dot sheets with weak damping in low-energy region. The parameters of superlattice formed by quantum-dot sheets are determined using of the short-range model of quantum dot. The density of states and spectral dependencies of the anisotropic absorption coefficient under mid-IR transitions from doped quantum dots into miniband states of superlattice strongly depend on dot concentration and on period of sheets. These dependencies can be used for characterization of the multi-layer structure and they determine parameters of different optoelectronic devices exploiting vertical transport of carriers through quantum-dot sheets.
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Low-energy electronic states in heterosrtuctures formed by ultranarrow layer (single or several monolayers thickness) are studied theoretically. The host material is described within the effective mass approximation and effect of ultranarrow layers is taken into account within the framework of the transfer matrix approach. Using the current conservation requirement and the inversion symmetry of ultranarrow layer, the transfer matrix is written through two phenomenological parameters. The binding energy of localized state, the reflection (transmission) coefficient for the single ultranarrow layer case, and the energy spectrum of superlattice are determined by these parameters. Spectral dependency of absorption in superlattice due to photoexcitation of electrons from localized states into minibands is strongly dependent on the ultranarrow layers characteristics. Such a dependency can be used for verification of the transfer matrix parameters.
Starting from the numerical solution of the 6-band textbf{k.p} description of a lattice-mismatched ellipsoidal quantum dot situated inside a nanowire, including a spin Zeeman effect with values appropriate to a dilute magnetic semiconductor, we propose and test phenomenological models of the effect of the built-in strain on the heavy hole, light hole and exciton states. We test the validity and the limits of a description restricted to a ($Gamma_8$) quadruplet of ground states and we demonstrate the role of the interactions of the light-hole state with light-hole excited states. We show that the built-in axial strain not only defines the character, heavy-hole or light-hole, of the ground state, but also mixes significantly the light-hole state with the split-off bands states: Even for a spin-orbit energy as large as 1 eV, that mixing induces first-order modifications of properties such as the spin value and anisotropy, the oscillator strength, and the electron-hole exchange, for which we extend the description to the light-hole exciton. CdTe/ZnTe quantum dots are mainly used as a test case but the concepts we discuss apply to many heterostructures, from mismatched II-VI and III-V quantum dots and nanowires, to III-V nanostructures submitted to an applied stress and to silicon nanodevices with even smaller residual strains.
Lateral quantum dot molecules consist of at least two closely-spaced InGaAs quantum dots arranged such that the axis connecting the quantum dots is perpendicular to the growth direction. These quantum dot complexes are called molecules because the small spacing between the quantum dots is expected to lead to the formation of molecular-like delocalized states. We present optical spectroscopy of ensembles and individual lateral quantum dot molecules as a function of electric fields applied along the growth direction. The results allow us to characterize the energy level structure of lateral quantum dot molecules and the spectral signatures of both charging and many-body interactions. We present experimental evidence for the existence of molecular-like delocalized states for electrons in the first excited energy shell.
We report electrical characterization of quantum dots formed by introducing pairs of thin wurtzite (WZ) segments in zinc blende (ZB) InAs nanowires. Regular Coulomb oscillations are observed over a wide gate voltage span, indicating that WZ segments create significant barriers for electron transport. We find a direct correlation of transport properties with quantum dot length and corresponding growth time of the enclosed ZB segment. The correlation is made possible by using a method to extract lengths of nanowire crystal phase segments directly from scanning electron microscopy images, and with support from transmission electron microscope images of typical nanowires. From experiments on controlled filling of nearly empty dots with electrons, up to the point where Coulomb oscillations can no longer be resolved, we estimate a lower bound for the ZB-WZ conduction-band offset of 95 meV.
We consider the dephasing rate of an electron level in a quantum dot, placed next to a fluctuating edge current in the fractional quantum Hall effect. Using perturbation theory, we show that this rate has an anomalous dependence on the bias voltage applied to the neighboring quantum point contact, which originates from the Luttinger liquid physics which describes the Hall fluid. General expressions are obtained using a screened Coulomb interaction. The dephasing rate is strictly proportional to the zero frequency backscattering current noise, which allows to describe exactly the weak to strong backscattering crossover using the Bethe-Ansatz solution.
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