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Register a new userElectronic states in heterostructures formed by ultranarrow layers
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Low-energy electronic states in heterosrtuctures formed by ultranarrow layer (single or several monolayers thickness) are studied theoretically. The host material is described within the effective mass approximation and effect of ultranarrow layers is taken into account within the framework of the transfer matrix approach. Using the current conservation requirement and the inversion symmetry of ultranarrow layer, the transfer matrix is written through two phenomenological parameters. The binding energy of localized state, the reflection (transmission) coefficient for the single ultranarrow layer case, and the energy spectrum of superlattice are determined by these parameters. Spectral dependency of absorption in superlattice due to photoexcitation of electrons from localized states into minibands is strongly dependent on the ultranarrow layers characteristics. Such a dependency can be used for verification of the transfer matrix parameters.
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Low-energy continuous states of electron in heterosrtucture with periodically placed quantum-dot sheets are studied theoretically. The Greens function of electron is governed by the Dyson equation with the self-energy function which is determined the boundary conditions at quantum-dot sheets with weak damping in low-energy region. The parameters of superlattice formed by quantum-dot sheets are determined using of the short-range model of quantum dot. The density of states and spectral dependencies of the anisotropic absorption coefficient under mid-IR transitions from doped quantum dots into miniband states of superlattice strongly depend on dot concentration and on period of sheets. These dependencies can be used for characterization of the multi-layer structure and they determine parameters of different optoelectronic devices exploiting vertical transport of carriers through quantum-dot sheets.
Surfaces are at the frontier of every known solid. They provide versatile supports for functional nanostructures and mediate essential physicochemical processes. Being intimately related with 2D materials, interfaces and atomically thin films often feature distinct electronic states with respect to the bulk, which are key for many relevant properties, such as catalytic activity, interfacial charge-transfer, or crystal growth mechanisms. Of particular interest is reducing the surface electrons dimensionality and spread with atomic precision, to induce novel quantum properties via lateral scattering and confinement. Both atomic manipulation and supramolecular principles provide access to custom-designed molecular superlattices, which tailor the surface electronic landscape and influence fundamental chemical and physical properties at the nanoscale. Herein, we review the confinement of surface state electrons focusing on their interaction with molecule-based scaffolds created by molecular manipulation and self-assembly protocols under ultrahigh vacuum conditions. Starting from the quasi-free 2D electron gas present at the (111)-terminated surface planes of noble metals, we illustrate the enhanced molecule-based structural complexity and versatility compared to simple atoms. We survey low-dimensional confining structures in the form of artificial lattices, molecular nanogratings or quantum dot arrays, which are constructed upon appropriate choice of their building constituents. Whenever the realized (metal-)organic networks exhibit long-range order, modified surface band structures with characteristic features emerge, revealing intriguing physical properties, such as discretization, quantum coupling or energy and effective mass renormalization. Such collective electronic states can be additionally modified by positioning guest species at the voids of open nanoarchitectures [...].
Van der Waals heterostructures formed by stacking different atomically thin layered materials have emerged as the sought-after device platform for electronic and optoelectronic applications. Determining the spatial extent of all the encapsulated components in such vertical stacks is key to optimal fabrication methods and improved device performance. Here we employ electrostatic force microscopy as a fast and non-invasive microscopic probe that provides compelling images of two dimensional layers buried over 30 nm below the sample surface. We demonstrate the versatility of the technique by studying heterojunctions comprising graphene, hexagonal boron nitride and transition metal dichalcogenides. Work function of each constituent layer acts as a unique fingerprint during imaging, thereby providing important insights into the charge environment, disorder, structural imperfections and doping profile. The technique holds great potential for gaining a comprehensive understanding of the quality, flatness as well as local electrical properties of buried layers in a large class of nanoscale materials and vertical heterostructures.
We show the presence of non-relativistic Levy-Leblond fermions in flat three- and four-layers graphene with AB stacking, extending the results obtained in [Curvatronics2017] for bilayer graphene. When the layer is curved we obtain a set of equations for Galilean fermions that are a variation of those of Levy-Leblond with a well defined combination of pseudospin, and that admit Levy-Leblond spinors as solutions in an approriate limit. The local energy of such Galilean fermions is sensitive to the intrinsic curvature of the surface. We discuss the relationship between two-dimensional pseudospin, labelling layer degrees of freedom, and the different energy bands. For Levy-Leblond fermions an interpretation is given in terms of massless fermions in an effective 4D spacetime, and in this case the pseudospin is related to four dimensional chirality. A non-zero energy band gap between conduction and valence electronic bands is obtained for surfaces with positive curvature.
By stacking various two-dimensional (2D) atomic crystals [1] on top of each other, it is possible to create multilayer heterostructures and devices with designed electronic properties [2-5]. However, various adsorbates become trapped between layers during their assembly, and this not only affects the resulting quality but also prevents the formation of a true artificial layered crystal upheld by van der Waals interaction, creating instead a laminate glued together by contamination. Transmission electron microscopy (TEM) has shown that graphene and boron nitride monolayers, the two best characterized 2D crystals, are densely covered with hydrocarbons (even after thermal annealing in high vacuum) and exhibit only small clean patches suitable for atomic resolution imaging [6-10]. This observation seems detrimental for any realistic prospect of creating van der Waals materials and heterostructures with atomically sharp interfaces. Here we employ cross sectional TEM to take a side view of several graphene-boron nitride heterostructures. We find that the trapped hydrocarbons segregate into isolated pockets, leaving the interfaces atomically clean. Moreover, we observe a clear correlation between interface roughness and the electronic quality of encapsulated graphene. This work proves the concept of heterostructures assembled with atomic layer precision and provides their first TEM images.
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