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Register a new userElectrically driven photonic crystal nanocavity devices
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Interest in photonic crystal nanocavities is fueled by advances in device performance, particularly in the development of low-threshold laser sources. Effective electrical control of high performance photonic crystal lasers has thus far remained elusive due to the complexities associated with current injection into cavities. A fabrication procedure for electrically pumping photonic crystal membrane devices using a lateral p-i-n junction has been developed and is described in this work. We have demonstrated electrically pumped lasing in our junctions with a threshold of 181 nA at 50K - the lowest threshold ever demonstrated in an electrically pumped laser. At room temperature we find that our devices behave as single-mode light-emitting diodes (LEDs), which when directly modulated, have an ultrafast electrical response up to 10 GHz corresponding to less than 1 fJ/bit energy operation - the lowest for any optical transmitter. In addition, we have demonstrated electrical pumping of photonic crystal nanobeam LEDs, and have built fiber taper coupled electro-optic modulators. Fiber-coupled photodetectors based on two-photon absorption are also demonstrated as well as multiply integrated components that can be independently electrically controlled. The presented electrical injection platform is a major step forward in providing practical low power and integrable devices for on-chip photonics.
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Controlling gain and loss of coupled optical cavities can induce non-Hermitian degeneracies of eigenstates, called exceptional points (EPs). Various unconventional phenomena around EPs have been reported, and expected to incorporate extra functionalities into photonic devices. The eigenmode exactly under the EP degeneracy is also predicted to exhibit enhanced radiation. However, such responses have yet to be observed in on-chip lasers, because of both the limited controllability of their gain and loss and the lifting of degeneracy by pump-induced cavity detuning. Here, we report the first non-Hermitian nanophotonic platform based on two electrically pumped photonic crystal lasers and its spontaneous emission at an EP degeneracy. Systematically tuned and independent current injection to our wavelength-scale active heterostructure cavities enables us to demonstrate the clear EP phase transition of their spontaneous emission, accompanied with the spectral coalescence of coupled modes and reversed pump dependence of the intensity. Furthermore, we find experimentally and confirm theoretically the peculiar squared Lorentzian emission spectrum very near the exact EP, which indicates the four-fold enhancement of the photonic local density of states induced purely by the degeneracy. Our results open a new pathway to engineer the light-matter interaction by non-Hermiticity and explore larger reconfigurable laser arrays for further non-Hermitian features and physics.
We demonstrate tunable frequency-converted light mediated by a chi-(2) nonlinear photonic crystal nanocavity. The wavelength-scale InP-based cavity supports two closely-spaced localized modes near 1550 nm which are resonantly excited by a 130 fs laser pulse. The cavity is simultaneously irradiated with a non-resonant probe beam, giving rise to rich second-order scattering spectra reflecting nonlinear mixing of the different resonant and non-resonant components. In particular, we highlight the radiation at the sum frequencies of the probe beam and the respective cavity modes. This would be a useful, minimally-invasive monitor of the joint occupancy state of multiple cavities in an integrated optical circuit.
Dipole-dipole interaction between two two-level `atoms in photonic crystal nanocavity is investigated based on finite-difference time domain algorithm. This method includes both real and virtual photon effects and can be applied for dipoles with different transition frequencies in both weak and strong coupling regimes. Numerical validations have been made for dipoles in vacuum and in an ideal planar microcavity. For dipoles located in photonic crystal nanocavity, it is found that the cooperative decay parameters and the dipole-dipole interaction potential strongly depend on the following four factors: the atomic position, the atomic transition frequency, the resonance frequency, and the cavity quality factor. Properly arranging the positions of the two atoms, we can acquire equal value of the cooperative decay parameters and the local coupling strength. Large cooperative decay parameters can be achieved when transition frequency is equal to the resonance frequency. For transition frequency varying in a domain of the cavity linewidth around the resonance frequency, dipole-dipole interaction potential changes continuously from attractive to repulsive case. Larger value and sharper change of cooperative parameters and dipole-dipole interaction can be obtained for higher quality factor. Our results provide some manipulative approaches for dipole-dipole interaction with potential application in various fields such as quantum computation and quantum information processing based on solid state nanocavity and quantum dot system.
Diamond is a material of choice in the pursuit of integrated quantum photonic technologies. So far, the majority of photonic devices fabricated from diamond, are made from (100)-oriented crystals. In this work, we demonstrate a methodology for the fabrication of optically-active membranes from (111)-oriented diamond. We use a liftoff technique to generate membranes, followed by chemical vapour deposition of diamond in the presence of silicon to generate homogenous silicon vacancy colour centers with emission properties that are superior to those in (100)-oriented diamond. We further use the diamond membranes to fabricate high quality microring resonators with quality factors exceeding ~ 3000. Supported by finite difference time domain calculations, we discuss the advantages of (111) oriented structures as building blocks for quantum nanophotonic devices.
Silicon is now firmly established as a high performance photonic material. Its only weakness is the lack of a native electrically driven light emitter that operates CW at room temperature, exhibits a narrow linewidth in the technologically important 1300- 1600 nm wavelength window, is small and operates with low power consumption. Here, an electrically pumped all-silicon nano light source around 1300-1600 nm range is demonstrated at room temperature. Using hydrogen plasma treatment, nano-scale optically active defects are introduced into silicon, which then feed the photonic crystal nanocavity to enahnce the electrically driven emission in a device via Purcell effect. A narrow ({Delta}{lambda} = 0.5 nm) emission line at 1515 nm wavelength with a power density of 0.4 mW/cm2 is observed, which represents the highest spectral power density ever reported from any silicon emitter. A number of possible improvements are also discussed, that make this scheme a very promising light source for optical interconnects and other important silicon photonics applications.
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