No Arabic abstract
Diamond is a material of choice in the pursuit of integrated quantum photonic technologies. So far, the majority of photonic devices fabricated from diamond, are made from (100)-oriented crystals. In this work, we demonstrate a methodology for the fabrication of optically-active membranes from (111)-oriented diamond. We use a liftoff technique to generate membranes, followed by chemical vapour deposition of diamond in the presence of silicon to generate homogenous silicon vacancy colour centers with emission properties that are superior to those in (100)-oriented diamond. We further use the diamond membranes to fabricate high quality microring resonators with quality factors exceeding ~ 3000. Supported by finite difference time domain calculations, we discuss the advantages of (111) oriented structures as building blocks for quantum nanophotonic devices.
Single crystal diamond membranes that host optically active emitters are highly attractive components for integrated quantum nanophotonics. In this work we demonstrate bottom-up synthesis of single crystal diamond membranes containing the germanium vacancy (GeV) color centers. We employ a lift-off technique to generate the membranes and perform chemical vapour deposition in a presence of germanium oxide to realize the insitu doping. Finally, we show that these membranes are suitable for engineering of photonic resonators such as microring cavities with quality factors of 1500. The robust and scalable approach to engineer single crystal diamond membranes containing emerging color centers is a promising pathway for realization of diamond integrated quantum nanophotonic circuits on a chip.
Recent efforts to define microscopic solid-immersion-lenses (SIL) by focused ion beam milling into diamond substrates that are registered to a preselected single photon emitter are summarized. We show how we determine the position of a single emitter with at least 100 nm lateral and 500 nm axial accuracy, and how the milling procedure is optimized. The characteristics of a single emitter, a Nitrogen Vacancy (NV) center in diamond, are measured before and after producing the SIL and compared with each other. A count rate of 1.0 million counts per second is achieved with a $[111]$ oriented NV center.
Optomechanical devices sensitively transduce and actuate motion of nanomechanical structures using light. Single--crystal diamond promises to improve the performance of optomechanical devices, while also providing opportunities to interface nanomechanics with diamond color center spins and related quantum technologies. Here we demonstrate dissipative waveguide--optomechanical coupling exceeding 35 GHz/nm to diamond nanobeams supporting both optical waveguide modes and mechanical resonances, and use this optomechanical coupling to measure nanobeam displacement with a sensitivity of $9.5$ fm/$sqrt{text{Hz}}$ and optical bandwidth $>150$nm. The nanobeams are fabricated from bulk optical grade single--crystal diamond using a scalable undercut etching process, and support mechanical resonances with quality factor $2.5 times 10^5$ at room temperature, and $7.2 times 10^5$ in cryogenic conditions (5K). Mechanical self--oscillations, resulting from interplay between photothermal and optomechanical effects, are observed with amplitude exceeding 200 nm for sub-$mu$W absorbed optical power, demonstrating the potential for optomechanical excitation and manipulation of diamond nanomechanical structures.
We report an experimental demonstration of thermal tuning of resonance frequency in a planar terahertz metamaterial consisting of a gold split-ring resonator array fabricated on a bulk single crystal strontium titanate (SrTiO3) substrate. Cooling the metamaterial starting from 409 K down to 150 K causes about 50% shift in resonance frequency as compare to its room temperature resonance, and there is very little variation in resonance strength. The resonance shift is due to the temperature-dependent refractive index (or the dielectric constant) of the strontium titanate. The experiment opens up avenues for designing tunable terahertz devices by exploiting the temperature sensitive characteristic of high dielectric constant substrates and complex metal oxide materials.
The long dreamed quantum internet would consist of a network of quantum nodes (solid-state or atomic systems) linked by flying qubits, naturally based on photons, travelling over long distances at the speed of light, with negligible decoherence. A key component is a light source, able to provide single or entangled photon pairs. Among the different platforms, semiconductor quantum dots are very attractive, as they can be integrated with other photonic and electronic components in miniaturized chips. In the early 1990s two approaches were developed to synthetize self-assembled epitaxial semiconductor quantum dots (QDs), or artificial atoms, namely the Stranski-Krastanov (SK) and the droplet epitaxy (DE) method. Because of its robustness and simplicity, the SK method became the workhorse to achieve several breakthroughs in both fundamental and technological areas. The need for specific emission wavelengths or structural and optical properties has nevertheless motivated further research on the DE method and its more recent development, the local-droplet-etching (LDE), as complementary routes to obtain high quality semiconductor nanostructures. The recent reports on the generation of highly entangled photon pairs, combined with good photon indistinguishability, suggest that DE and LDE QDs may complement (and sometime even outperform) conventional SK InGaAs QDs as quantum emitters. We present here a critical survey of the state of the art of DE and LDE, highlighting the advantages and weaknesses, the obtained achievements and the still open challenges, in view of applications in quantum communication and technology.