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Manifestation of electron-electron interaction in the magnetoresistance of graphene

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 Added by Heiko B. Weber
 Publication date 2011
  fields Physics
and research's language is English




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We investigate the magnetotransport in large area graphene Hall bars epitaxially grown on silicon carbide. In the intermediate field regime between weak localization and Landau quantization the observed temperature-dependent parabolic magnetoresistivity (MR) is a manifestation of the electron-electron interaction (EEI). We can consistently describe the data with a model for diffusive (magneto)transport that also includes magnetic-field dependent effects originating from ballistic time scales. We find an excellent agreement between the experimentally observed temperature dependence of MR and the theory of EEI in the diffusive regime. We can further assign a temperature-driven crossover to the reduction of the multiplet modes contributing to EEI from 7 to 3 due to intervalley scattering. In addition, we find a temperature independent ballistic contribution to the MR in classically strong magnetic fields.



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Electron-electron interactions play a critical role in many condensed matter phenomena, and it is tempting to find a way to control them by changing the interactions strength. One possible approach is to place a studied system in proximity of a metal, which induces additional screening and hence suppresses electron interactions. Here, using devices with atomically-thin gate dielectrics and atomically-flat metallic gates, we measure the electron-electron scattering length in graphene and report qualitative deviations from the standard behavior. The changes induced by screening become important only at gate dielectric thicknesses of a few nm, much smaller than a typical separation between electrons. Our theoretical analysis agrees well with the scattering rates extracted from measurements of electron viscosity in monolayer graphene and of umklapp electron-electron scattering in graphene superlattices. The results provide a guidance for future attempts to achieve proximity screening of many-body phenomena in two-dimensional systems.
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The effect of electron-electron interaction on the low-temperature conductivity of graphene is investigated experimentally. Unlike in other two-dimensional systems, the electron-electron interaction correction in graphene is sensitive to the details of disorder. A new temperature regime of the interaction correction is observed where quantum interference is suppressed by intra-valley scattering. We determine the value of the interaction parameter, F_0 ~ -0.1, and show that its small value is due to the chiral nature of interacting electrons.
We discuss valley current, which is carried by quasiparticles in graphene. We show that the valley current arises owing to a peculiar term in the electron-phonon collision integral that mixes the scalar and vector gauge-field-like vertices in the electron-phonon interaction. This mixing makes collisions of phonons with electrons sensitive to their chirality, which is opposite in two valleys. As a result of collisions with phonons, electrons of the different valleys deviate in opposite directions. Breaking the spatial inversion symmetry is not needed for a valley-dependent deviation of the quasiparticle current. The effect exists both in pristine graphene or bilayer graphene samples, and it increases with temperature owing to a higher rate of collisions with phonons at higher temperatures. The valley current carried by quasiparticles could be detected by measuring the electric current using a nonlocal transformer of a suitable design.
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