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Register a new userParametric oscillator based on non-linear vortex dynamics in low resistance magnetic tunnel junctions
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Authors
S. Martin
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Radiofrequency vortex spin-transfer oscillators based on magnetic tunnel junctions with very low resistance area product were investigated. A high power of excitations has been obtained characterized by a power spectral density containing a very sharp peak at the fundamental frequency and a series of harmonics. The observed behaviour is ascribed to the combined effect of spin transfer torque and Oersted-Amp`ere field generated by the large applied dc-current. We furthermore show that the synchronization of a vortex oscillation by applying a ac bias current is mostly efficient when the external frequency is twice the oscillator fundamental frequency. This result is interpreted in terms of a parametric oscillator.
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Frequency modulation experiments were performed on a spin torque vortex oscillator for a wide range of modulation frequency, up to 10 % of the oscillator frequency. A thorough analysis of the intermodulation products shows that the key parameter that describes these experiments is the deviation sensitivity, which is the dynamical frequency-current dependence. It differs significantly from the oscillator tunability discussed so far in the context of spin-transfer oscillators. The essential difference between these two concepts is related to the response time of the vortex oscillator, driven either in quasi-steady state or in a transient regime.
Magnetic tunnel junctions are nanoscale spintronic devices with microwave generation and detection capabilities. Here we use the rectification effect called spin-diode in a magnetic tunnel junction to wirelessly detect the microwave emission of another junction in the auto-oscillatory regime. We show that the rectified spin-diode voltage measured at the receiving junction end can be reconstructed from the independently measured auto-oscillation and spin diode spectra in each junction. Finally we adapt the auto-oscillator model to the case of spin-torque oscillator and spin-torque diode and we show that accurately reproduces the experimentally observed features. These results will be useful to design circuits and chips based on spintronic nanodevices communicating through microwaves.
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We theoretically study the recently observed tunnel-barrier-enhanced dc voltage signals generated by magnetization precession in magnetic tunnel junctions. While the spin pumping is suppressed by the high tunneling impedance, two complimentary processes are predicted to result in a sizable voltage generation in ferromagnet (F)|insulator (I)|normal-metal (N) and F|I|F junctions, with one ferromagnet being resonantly excited. Magnetic dynamics in F|I|F systems induces a robust charge pumping, translating into voltage in open circuits. In addition, dynamics in a single ferromagnetic layer develops longitudinal spin accumulation inside the ferromagnet. A tunnel barrier then acts as a nonintrusive probe that converts the spin accumulation into a measurable voltage. Neither of the proposed mechanisms suffers from spin relaxation, which is typically fast on the scale of the exponentially slow tunneling rates. The longitudinal spin-accumulation buildup, however, is very sensitive to the phenomenological ingredients of the spin-relaxation picture.
Modulation of a spin-torque oscillator (STO) signal based on a magnetic tunnel junction (MTJ) with perpendicularly magnetized free layer is investigated. Magnetic field inductive loop was created during MTJ fabrication process, which enables microwave field application during STO operation. The frequency modulation by the microwave magnetic field of up to 3 GHz is explored, showing a potential for application in high-data-rate communication technologies. Moreover, an inductive loop is used for self-synchronization of the STO signal, which after field-locking exhibits significant improvement of the linewidth and oscillation power.
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