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Register a new userGraphene microwave transistors on sapphire substrates
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We have developed metal-oxide graphene field-effect transistors (MOGFETs) on sapphire substrates working at microwave frequencies. For monolayers, we obtain a transit frequency up to ~ 80 GHz for a gate length of 200 nm, and a power gain maximum frequency of about ~ 3 GHz for this specific sample. Given the strongly reduced charge noise for nanostructures on sapphire, the high stability and high performance of this material at low temperature, our MOGFETs on sapphire are well suited for a cryogenic broadband low-noise amplifier.
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We report the realization of top-gated graphene nanoribbon field effect transistors (GNRFETs) of ~10 nm width on large-area epitaxial graphene exhibiting the opening of a band gap of ~0.14 eV. Contrary to prior observations of disordered transport and severe edge-roughness effects of GNRs, the experimental results presented here clearly show that the transport mechanism in carefully fabricated GNRFETs is conventional band-transport at room temperature, and inter-band tunneling at low temperature. The entire space of temperature, size, and geometry dependent transport properties and electrostatics of the GNRFETs are explained by a conventional thermionic emission and tunneling current model. Our combined experimental and modeling work proves that carefully fabricated narrow GNRs behave as conventional semiconductors, and remain potential candidates for electronic switching devices.
This paper describes the behavior of top gated transistors fabricated using carbon, particularly epitaxial graphene on SiC, as the active material. In the past decade research has identified carbon-based electronics as a possible alternative to silicon-based electronics. This enthusiasm was spurred by high carbon nanotube carrier mobilities. However, nanotube production, placement, and control are all serious issues. Graphene, a thin sheet of graphitic carbon, can overcome some of these problems and therefore is a promising new electronic material. Although graphene devices have been built before, in this work we provide the first demonstration and systematic evaluation of arrays of a large number of transistors entirely produced using standard microelectronics methods. Graphene devices presented feature high-k dielectric, mobilities up to 5000 cm2/Vs and, Ion/Ioff ratios of up to 7, and are methodically analyzed to provide insight into the substrate properties. Typical of graphene, these micron-scale devices have negligible band gaps and therefore large leakage currents.
Placing graphene on uniaxial substrates may have interesting application potential for graphene-based photonic and optoelectronic devices. Here we analytically derive the dispersion relation for graphene plasmons on uniaxial substrates and discuss their momentum, propagation length and polarization as a function of frequency, propagation direction and both ordinary and extraordinary dielectric permittivities of the substrate. We find that the plasmons exhibit an anisotropic propagation, yielding radially asymmetric field patterns when a point emitter launches plasmons in the graphene layer.
Allotropes of carbon, including one-dimensional carbon nanotubes and two-dimensional graphene sheets, continue to draw attention as promising platforms for probing the physics of electrons in lower dimensions. Recent research has shown that the electronic properties of graphene multilayers are exquisitely sensitive to the relative orientation between sheets, and in the bilayer case exhibit strong electronic correlations when close to a magic twist angle. Here, we investigate the electronic properties of a carbon nanotube deposited on a graphene sheet by deriving a low-energy theory that accounts both for rotations and rigid displacements of the nanotube with respect to the underlying graphene layer. We show that this heterostructure is described by a translationally invariant, a periodic or a quasi-periodic Hamiltonian, depending on the orientation and the chirality of the nanotube. Furthermore, we find that, even for a vanishing twist angle, rigid displacements of a nanotube with respect to a graphene substrate can alter its electronic structure qualitatively. Our results identify a promising new direction for strong correlation physics in low dimensions.
The electronic structure of graphene on Cu(111) and Cu(100) single crystals is investigated using low energy electron microscopy, low energy electron diffraction and angle resolved photoemission spectroscopy. On both substrates the graphene is rotationally disordered and interactions between the graphene and substrate lead to a shift in the Dirac crossing of $sim$ -0.3 eV and the opening of a $sim$ 250 meV gap. Exposure of the samples to air resulted in intercalation of oxygen under the graphene on Cu(100), which formed a ($sqrt{2} times 2sqrt{2}$)R45$^{rm o}$ superstructure. The effect of this intercalation on the graphene $pi$ bands is to increase the offset of the Dirac crossing ($sim$ -0.6 eV) and enlarge the gap ($sim$ 350 meV). No such effect is observed for the graphene on Cu(111) sample, with the surface state at $Gamma$ not showing the gap associated with a surface superstructure. The graphene film is found to protect the surface state from air exposure, with no change in the effective mass observed.
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