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Register a new userLyotropic chromonic liquid crystal semiconductors for water-solution processable organic electronics
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We propose lyotropic chromonic liquid crystals (LCLCs) as a distinct class of materials for organic electronics. In water, the chromonic molecules stack on top of each other into elongated aggregates that form orientationally ordered phases. The aligned aggregated structure is preserved when the material is deposited onto a substrate and dried. The dried LCLC films show a strongly anisotropic electric conductivity of semiconductor type. The field-effect carrier mobility measured along the molecular aggregates in unoptimized films of LCLC V20 is 0.03 cm^2 V^(-1) s^(-1). Easy processibility, low cost, and high mobility demonstrate the potential of LCLCs for microelectronic applications.
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Lyotropic chromonic liquid crystals (LCLCs) represent aqueous dispersions of organic disk-like molecules that form cylindrical aggregates. Despite the growing interest in these materials, their flow behavior is poorly understood. Here, we explore the effect of shear on dynamic structures of the nematic LCLC, formed by 14wt ${%}$ water dispersion of disodium cromoglycate (DSCG). We employ in-situ polarizing optical microscopy (POM) and small-angle and wide-angle X-ray scattering (SAXS/WAXS) to obtain independent and complementary information on the director structures over a wide range of shear rates. The DSCG nematic shows a shear-thinning behavior with two shear-thinning regions (Region I at $dot{gamma}<1,s^{-1}$ and Region III at $dot{gamma}>10 s^{-1}$) separated by a pseudo-Newtonian Region II ($1 s^{-1}<dot{gamma}<10 s^{-1}$). The material is of a tumbling type. In Region I, $dot{gamma}<1 s^{-1}$, the director realigns along the vorticity axis. An increase of $dot{gamma}$ above $1 s^{-1}$ triggers nucleation of disclination loops. The disclinations introduce patches of the director that deviates from the vorticity direction and form a polydomain texture. Extension of the domains along the flow and along the vorticity direction decreases with the increase of the shear rate to $10 s^{-1}$. Above $10 s^{-1}$, the domains begin to elongate along the flow. At $dot{gamma}>100 s^{-1}$, the texture evolves into periodic stripes in which the director is predominantly along the flow with left and right tilts. The period of stripes decreases with an increase of $dot{gamma}$. The shear-induced transformations are explained by the balance of the elastic and viscous energies. In particular, nucleation of disclinations is associated with an increase of the elastic energy at the walls separating nonsingular domains with different director tilts.
We explore the possibility that hyperfine interaction causes the recently discovered organic magnetoresistance (OMAR) effect. Our study employs both experiment and theoretical modelling. An excitonic pair mechanism model based on hyperfine interaction, previously suggested by others to explain magnetic field effects in organics, is examined. Whereas this model can explain a few key aspects of the experimental data, we, however, uncover several fundamental contradictions as well. By varying the injection efficiency for minority carriers in the devices, we show experimentally that OMAR is only weakly dependent on the ratio between excitons formed and carriers injected, likely excluding any excitonic effect as the origin of OMAR.
Organic printed electronics has proven its potential as an essential enabler for applications related to healthcare, entertainment, energy and distributed intelligent objects. The possibility of exploiting solution-based and direct-writing production schemes further boosts the benefits offered by such technology, facilitating the implementation of cheap, conformable, bio-compatible electronic applications. The result shown in this work challenges the widespread assumption that such class of electronic devices is relegated to low-frequency operation, owing to the limited charge mobility of the materials and to the low spatial resolution achievable with conventional printing techniques. Here, it is shown that solution-processed and direct-written organic field-effect transistors can be carefully designed and fabricated so to achieve a maximum transition frequency of 160 MHz, unlocking an operational range that was not available before for organics. Such range was believed to be only accessible with more performing classes of semiconductor materials and/or more expensive fabrication schemes. The present achievement opens a route for cost- and energy-efficient manufacturability of flexible and conformable electronics with wireless-communication capabilities.
A series of amphiphilic LC block copolymers, in which the hydrophobic block is a smectic polymer poly(4-methoxyphenyl 4-(6-acryloyloxy-hexyloxy)-benzoate) (PA6ester1) and the hydrophilic block is polyethyleneglycol (PEG), were synthesized and characterized. The self-assembly of one of them in both the pure state and the dilute aqueous solution was investigated in detail. Nano-structures in the pure state were studied by SAXS and WAXS on samples aligned by a magnetic field. A hexagonal cylindrical micro-segregation phase was observed with a lattice distance of 11.2 nm. The PEG blocks are in the cylinder, while the smectic polymer blocks form a matrix with layer spacing 2.4 nm and layer normal parallel to the long axis of the cylinders. Faceted unilamellar polymer vesicles, polymersomes, were formed in water, as revealed by cryo-TEM. In the lyotropic bilayer membrane of these polymersomes, the thermotropic smectic order in the hydrophobic block is clearly visible with layer normal parallel to the membrane surface.
In this paper we present an improved process for producing elastomer transistor stamps and high-mobility organic field-effect transistors (FETs) based on semiconducting acene molecular crystals. In particular, we have removed the need to use a silanized Si wafer for curing the stamps and to handle a fragile micron-thickness polydimethylsiloxane (PDMS) insulating film and laminate it, bubble free, against the PDMS transistor stamp. We find that despite the altered design, rougher PDMS surface, and lamination and measurement of the device in air, we still achieve electrical mobilities of order 10 cm^2/Vs, comparable to the current state of the art in organic FETs. Our device shows hole conduction with a threshold voltage of order -9V, which corresponds to a trap density of 1.4 x 10^10 cm^-2.
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