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Hyperfine interaction and magnetoresistance in organic semiconductors

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 Added by Markus Wohlgenannt
 Publication date 2006
  fields Physics
and research's language is English




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We explore the possibility that hyperfine interaction causes the recently discovered organic magnetoresistance (OMAR) effect. Our study employs both experiment and theoretical modelling. An excitonic pair mechanism model based on hyperfine interaction, previously suggested by others to explain magnetic field effects in organics, is examined. Whereas this model can explain a few key aspects of the experimental data, we, however, uncover several fundamental contradictions as well. By varying the injection efficiency for minority carriers in the devices, we show experimentally that OMAR is only weakly dependent on the ratio between excitons formed and carriers injected, likely excluding any excitonic effect as the origin of OMAR.



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The magneto-electronic field effects in organic semiconductors at high magnetic fields are described by field-dependent mixing between singlet and triplet states of weakly bound charge carrier pairs due to small differences in their Lande g-factors that arise from the weak spin-orbit coupling in the material. In this work, we corroborate theoretical models for the high-field magnetoresistance of organic semiconductors, in particular of diodes made of the conducting polymer poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS) at low temperatures, by conducting magnetoresistance measurements along with multi-frequency continuous-wave electrically detected magnetic resonance experiments. The measurements were performed on identical devices under similar conditions in order to independently assess the magnetic field-dependent spin-mixing mechanism, the so-called {Delta}g mechanism, which originates from differences in the charge-carrier g-factors induced by spin-orbit coupling.
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