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Register a new userPiezoresistance in silicon at uniaxial compressive stresses up to 3 GPa
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The room-temperature longitudinal piezoresistance of n-type and p-type crystalline silicon along selected crystal axes is investigated under uniaxial compressive stresses up to 3 GPa. While the conductance ($G$) of n-type silicon eventually saturates at $approx 45%$ of its zero-stress value ($G_0$) in accordance with the charge transfer model, in p-type material $G/G_0$ increases above a predicted limit of $approx 4.5$ without any significant saturation, even at 3 GPa. Calculation of $G/G_0$ using textit{ab-initio} density functional theory reveals that neither $G$ nor the mobility, when properly averaged over the hole distribution, saturate at stresses lower than 3 GPa. The lack of saturation has important consequences for strained silicon technologies.
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Basal plane resistivity of expanded graphite was studied under simultaneous influence of hydrostatic pressure up to 1.8 GPa and magnetic field 0.8 T in the 77-300 K temperature region. Magnetic field induces negative magnetoresistance in the sample within all temperature and pressure range studied. A change in resistivity of the sample under maximum pressure reaches 80%. Significant change in resistivity dependence on temperature under the pressure of 0.6 GPa suggests for ordering transition in the sample studied. Negative magnetoresistance in the graphite reaches about 15% at 0.6 GPa. Magnetic field acts in the same way as pressure and potentiates the transition formation and further magnetoresistance dynamics. The effects observed are mostly of elastic character according to resistivity of the unloaded sample.
Only several compounds bearing Ag(II) cation and other transition metal cation have been known. Herein, we predict stability and crystal structures of hypothetical ternary silver(II) fluorides with copper, nickel and cobalt in 1:1 stoichiometry at pressure range from 0 GPa up to 20 GPa within the frame of Density Functional Theory. Calculations show that AgCoF4 could be synthesized already at ambient conditions but this compound would host diamagnetic Ag(I) and high-spin Co(III). However, at increased pressure ternary fluorides of Ag(II) featuring Cu and Ni could be synthesized, in the pressure windows of 7-14 and 8-15 GPa, respectively. All title compounds would be semiconducting and magnetically ordered.
Boron carbide is a ceramic material with unique properties widely used in numerous, including armor, applications. Its mechanical properties, mechanism of compression, and limits of stability are of both scientific and practical value. Here, we report the behavior of the stoichiometric boron carbide B13C2 studied on single crystals up to 68 GPa. As revealed by synchrotron X-ray diffraction, B13C2 maintains its crystal structure and does not undergo phase transitions. Accurate measurements of the unit cell and B12 icosahedra volumes as a function of pressure led to conclusion that they reduce similarly upon compression that is typical for covalently bonded solids. A comparison of the compressional behavior of B13C2 with that of alpha-B, gamma-B, and B4C showed that it is determined by the types of bonding involved in the course of compression. Neither molecular-like nor inversed-molecular-like solid behavior upon compression was detected that closes a long-standing scientific dispute.
Piezoresistance is the change in the electrical resistance, or more specifically the resistivity, of a solid induced by an applied mechanical stress. The origin of this effect in bulk, crystalline materials like Silicon, is principally a change in the electronic structure which leads to a modification of the charge carriers effective mass. The last few years have seen a rising interest in the piezoresistive properties of semiconductor nanostructures, motivated in large part by claims of a giant piezoresistance effect in Silicon nanowires that is more than two orders of magnitude bigger than the known bulk effect. This review aims to present the controversy surrounding claims and counter-claims of giant piezoresistance in Silicon nanostructures by presenting a summary of the major works carried out over the last 10 years. The main conclusions that can be drawn from the literature are that i) reproducible evidence for a giant piezoresistance effect in un-gated Silicon nanowires is limited, ii) in gated nanowires a giant effect has been reproduced by several authors, iii) the giant effect is fundamentally different from either the bulk Silicon piezoresistance or that due to quantum confinement in accumulation layers and heterostructures, the evidence pointing to an electrostatic origin for the piezoresistance, iv) released nanowires tend to have slightly larger piezoresistance coefficients than un-released nanowires, and v) insufficient work has been performed on bottom-up grown nanowires to be able to rule out a fundamental difference in their properties when compared with top-down nanowires. On the basis of this, future possible research directions are suggested.
We report ab initio calculations of the melting curve and Hugoniot of molybdenum for the pressure range 0-400 GPa, using density functional theory (DFT) in the projector augmented wave (PAW) implementation. We use the ``reference coexistence technique to overcome uncertainties inherent in earlier DFT calculations of the melting curve of Mo. Our calculated melting curve agrees well with experiment at ambient pressure and is consistent with shock data at high pressure, but does not agree with the high pressure melting curve from static compression experiments. Our calculated P(V) and T(P) Hugoniot relations agree well with shock measurements. We use calculations of phonon dispersion relations as a function of pressure to eliminate some possible interpretations of the solid-solid phase transition observed in shock experiments on Mo.
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